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PESD3V3X1BCSFYL

P1-P3P4-P6P7-P9P10-P12P13-P13
NXP Semiconductors
PESD3V3X1BCSF
Ultra low capacitance bidirectional ESD protection diode
PESD3V3X1BCSF All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet 17 August 2015 3 / 12
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
I
PPM
rated peak pulse current t
p
8/20 µs [1] - 8 A
T
j
junction temperature - 150 °C
T
amb
ambient temperature -40 125 °C
T
stg
storage temperature -65 150 °C
ESD maximum ratings
IEC 61000-4-2; contact discharge [2] - 20 kVV
ESD
electrostatic discharge voltage
IEC 61000-4-2; air discharge [2] - 20 kV
[1] According to IEC 61000-4-5 and IEC 61643-321.
[2] Device stressed with ten non-repetitive ESD pulses.
t (µs)
0 403010 20
001aaa630
40
80
120
I
PP
(%)
0
e
- t
100 % I
PP
; 8 µs
50 % I
PP
; 20 µs
Fig. 1. 8/20 µs pulse waveform according to
IEC 61000-4-5 and IEC 61643-321
001aaa631
I
PP
100 %
90 %
t
30 ns
60 ns
10 %
t
r
= 0.6 ns to 1 ns
Fig. 2. ESD pulse waveform according to
IEC 61000-4-2
NXP Semiconductors
PESD3V3X1BCSF
Ultra low capacitance bidirectional ESD protection diode
PESD3V3X1BCSF All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet 17 August 2015 4 / 12
9. Characteristics
Table 6. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
V
RWM
reverse standoff
voltage
T
amb
= 25 °C - - 3.3 V
I
RM
reverse leakage
current
V
RWM
= 3.3 V; T
amb
= 25 °C - 1 100 nA
C
d
diode capacitance f = 1 MHz; V
R
= 0 V; T
amb
= 25 °C - - 1.1 pF
V
BR
breakdown voltage I
R
= 1 mA; T
amb
= 25 °C 6 10 - V
I
PP
= 8 A; T
amb
= 25 °C; t
p
= 8/20 μs [1] - - 5.5 V
I
PP
= 8 A; T
amb
= 25 °C; t
p
= TLP [2] - 4.6 - V
V
CL
clamping voltage
I
PP
= 16 A; T
amb
= 25 °C; t
p
= TLP [2] - 6.5 - V
R
dyn
dynamic resistance I
R
= 10 A; T
amb
= 25 °C [2] - 0.25 - Ω
[1] According to IEC 61000-4-5 and IEC 61643-321.
[2] Non-repetitive current pulse, Transmission Line Pulse (TLP) t
p
= 100 ns; square pulse; ANSI / ESD
STM5.5.1-2008.
Fig. 3. V-I characteristics for a bidirectional ESD
protection diode
V
CL
(V)
0 20155 10
aaa-018661
8
4
12
16
I
PP
(A)
0
R
dyn
= 0.25 Ω
t
p
= 100 ns; Transmission Line Pulse (TLP)
Fig. 4. Dynamic resistance with positive clamping
voltage
NXP Semiconductors
PESD3V3X1BCSF
Ultra low capacitance bidirectional ESD protection diode
PESD3V3X1BCSF All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet 17 August 2015 5 / 12
V
CL
(V)
-20 0-5-15 -10
aaa-018662
-8
-12
-4
0
I
PP
(A)
-16
R
dyn
= 0.25 Ω
t
p
= 100 ns; Transmission Line Pulse (TLP)
Fig. 5. Dynamic resistance with negative clamping voltage
50 Ω
R
d
C
s
DUT
(DEVICE
UNDER
TEST)
RG 223/U
50 Ω coax
ESD TESTER
IEC 61000-4-2 ed.2
C
s
= 150 pF; R
d
= 330 Ω
4 GHz DIGITAL
OSCILLOSCOPE
40 dB
ATTENUATOR
unclamped +8 kV ESD pulse waveform
(IEC 61000-4-2 network)
0
6
2
10
V
(kV)
-2
t (ns)
-10 7030
4
8
4020100 50 60
unclamped -8 kV ESD pulse waveform
(IEC 61000-4-2 network)
-8
-2
-6
2
V
(kV)
-10
t (ns)
-10 7030
-4
0
4020100 50 60
aaa-003952
Fig. 6. ESD clamping test setup and waveforms
P1-P3P4-P6P7-P9P10-P12P13-P13

PESD3V3X1BCSFYL

Mfr. #:
Buy PESD3V3X1BCSFYL
Manufacturer:
Nexperia
Description:
TVS Diodes / ESD Suppressors Bidirectional ESD Protection Diode
Lifecycle:
New from this manufacturer.
Delivery:
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