BDX33, BDX33A, BDX33B, BDX33C, BDX33D
NPN SILICON POWER DARLINGTONS
4
AUGUST 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
TYPICAL CHARACTERISTICS
Figure 1. Figure 2.
Figure 3.
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
I
C
- Collector Current - A
0·5 1·0 10
h
FE
- Typical DC Current Gain
50000
100
1000
10000
TCS130AF
T
C
= -40°C
T
C
= 25°C
T
C
= 100°C
V
CE
= 3 V
t
p
= 300 µs, duty cycle < 2%
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
I
C
- Collector Current - A
0·5 1·0 10
V
CE(sat)
- Collector-Emitter Saturation Voltage - V
0·5
1·0
1·5
2·0
TCS130AH
T
C
= -40°C
T
C
= 25°C
T
C
= 100°C
t
p
= 300 µs, duty cycle < 2%
I
B
= I
C
/ 100
BASE-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
I
C
- Collector Current - A
0·5 1·0 10
V
BE(sat)
- Base-Emitter Saturation Voltage - V
0·5
1·0
1·5
2·0
2·5
3·0
TCS130AJ
T
C
= -40°C
T
C
= 25°C
T
C
= 100°C
I
B
= I
C
/ 100
t
p
= 300 µs, duty cycle < 2%
