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SQJ469EP-T1_GE3

P1-P3P4-P6P7-P9P10-P11
SQJ469EP
www.vishay.com
Vishay Siliconix
S11-2288-Rev. B, 28-Nov-11
1
Document Number: 65936
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Automotive P-Channel 80 V (D-S) 175 °C MOSFET
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
•TrenchFET
®
Power MOSFET
• AEC-Q101 Qualified
d
•100 % R
g
and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
Notes
a. Package limited.
b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
c. When mounted on 1" square PCB (FR4 material).
d. Parametric verification ongoing.
e. See solder profile (www.vishay.com/doc?73257
). The PowerPAK SO-8L. The end of the lead terminal is exposed copper (not plated) as a
result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to
ensure adequate bottom side solder interconnection.
f. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
PRODUCT SUMMARY
V
DS
(V) - 80
R
DS(on)
(Ω) at V
GS
= - 10 V 0.025
R
DS(on)
(Ω) at V
GS
= - 6 V 0.029
I
D
(A) - 32
Configuration Single
S
G
D
P-Channel MOSFET
4
6.15 mm
PowerPAK
®
SO-8L Single
5.13 mm
3
2
1
G
S
S
S
D
ORDERING INFORMATION
Package PowerPAK SO-8L
Lead (Pb)-free and Halogen-free SQJ469EP-T1-GE3
ABSOLUTE MAXIMUM RATINGS (T
C
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
DS
- 80
V
Gate-Source Voltage V
GS
± 20
Continuous Drain Current
a
T
C
= 25 °C
I
D
- 32
A
T
C
= 125 °C - 24
Continuous Source Current (Diode Conduction)
a
I
S
- 32
Pulsed Drain Current
b
I
DM
- 128
Single Pulse Avalanche Current
L = 0.1 mH
I
AS
- 45
Single Pulse Avalanche Energy E
AS
101 mJ
Maximum Power Dissipation
b
T
C
= 25 °C
P
D
100
W
T
C
= 125 °C 33
Operating Junction and Storage Temperature Range T
J
, T
stg
- 55 to + 175
°C
Soldering Recommendations (Peak Temperature)
e, f
260
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL LIMIT UNIT
Junction-to-Ambient PCB Mount
c
R
thJA
65
°C/W
Junction-to-Case (Drain) R
thJC
1.5
SQJ469EP
www.vishay.com
Vishay Siliconix
S11-2288-Rev. B, 28-Nov-11
2
Document Number: 65936
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (T
C
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
DS
V
GS
= 0, I
D
= - 250 μA - 80 - -
V
Gate-Source Threshold Voltage V
GS(th)
V
DS
= V
GS
, I
D
= - 250 μA - 1.5 - 2.0 - 2.5
Gate-Source Leakage I
GSS
V
DS
= 0 V, V
GS
= ± 20 V - - ± 100 nA
Zero Gate Voltage Drain Current I
DSS
V
GS
= 0 V V
DS
= - 80 V - - - 1
μA V
GS
= 0 V V
DS
= - 80 V, T
J
= 125 °C - - - 50
V
GS
= 0 V V
DS
= - 80 V, T
J
= 175 °C - - - 150
On-State Drain Current
a
I
D(on)
V
GS
= - 10 V V
DS
= -5 V - 30 - - A
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= - 10 V I
D
= - 10.2 A - 0.021 0.025
Ω
V
GS
= - 10 V T
J
= 125 °C - 0.036 0.043
V
GS
= - 10 V T
J
= 175 °C - 0.045 0.054
V
GS
= - 6 V I
D
= - 8.1 A - 0.024 0.029
Forward Transconductance
b
g
fs
V
DS
= - 15 V, I
D
= - 10.2 A - 35 - S
Dynamic
b
Input Capacitance C
iss
V
GS
= 0 V V
DS
= - 40 V, f = 1 MHz
- 4250 5100
pF Output Capacitance C
oss
- 250 300
Reverse Transfer Capacitance C
rss
- 215 260
Total Gate Charge
c
Q
g
V
GS
= - 10 V V
DS
= - 40 V, I
D
= - 10.2 A
- 101 155
nC Gate-Source Charge
c
Q
gs
-13-
Gate-Drain Charge
c
Q
gd
-21-
Gate Resistance R
g
f = 1 MHz 1.8 3.2 4.6 Ω
Turn-On Delay Time
c
t
d(on)
V
DD
= - 40 V, R
L
= 4.9 Ω
I
D
≅ - 8.1 A, V
GEN
= - 10 V, R
g
= 1 Ω
-1620
ns
Rise Time
c
t
r
-1620
Turn-Off Delay Time
c
t
d(off)
- 150 180
Fall Time
c
t
f
-4050
Source-Drain Diode Ratings and Characteristics
b
Pulsed Current
a
I
SM
- - - 128 A
Forward Voltage V
SD
I
F
= - 8.1 A, V
GS
= 0 - - 0.8 - 1.2 V
SQJ469EP
www.vishay.com
Vishay Siliconix
S11-2288-Rev. B, 28-Nov-11
3
Document Number: 65936
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (T
A
= 25 °C, unless otherwise noted)
Output Characteristics
Transconductance
Capacitance
Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
0
8
16
24
32
40
0246810
V
GS
=10Vthru4V
V
DS
- Drain-to-Source Voltage (V)
- Drain Current (A)I
D
0
12
24
36
48
60
0 5 10 15 20 25
T
C
= 125 °C
T
C
= - 55 °C
T
C
= 25 °C
I
D
- Drain Current (A)
- Transconductance (S)
g
fs
C
rss
0
1000
2000
3000
4000
5000
6000
7000
020406080
C
iss
C
oss
V
DS
- Drain-to-Source Voltage (V)
C - Capacitance (pF)
0
8
16
24
32
40
012345
T
C
= 25 °C
T
C
= 125 °C
T
C
= - 55 °C
V
GS
- Gate-to-Source Voltage (V)
- Drain Current (A)I
D
0
0.01
0.02
0.03
0.04
0.05
0 8 16 24 32 40
V
GS
=6V
V
GS
=10V
- On-Resistance (Ω)R
DS(on)
I
D
- Drain Current (A)
0
2
4
6
8
10
0 20406080100120
Q
g
- Total Gate Charge (nC)
V
GS
- Gate-to-Source Voltage (V)
I
D
= 10.2 A
V
DS
=40V
P1-P3P4-P6P7-P9P10-P11

SQJ469EP-T1_GE3

Mfr. #:
Buy SQJ469EP-T1_GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 80V 32A 100W AEC-Q101 Qualified
Lifecycle:
New from this manufacturer.
Delivery:
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