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NSD350HT1G

P1-P3P4-P4
© Semiconductor Components Industries, LLC, 2015
April, 2015 − Rev. 0
1 Publication Order Number:
NSD350H/D
NSD350H
High Voltage Switching
Diode
The NSD350H is a high voltage switching diode in a SOD−323
surface mount package.
Features
• Small Footprint Package, SOD−323
• NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• Pb−free Device, Halogen Free/BFR Free and are RoHS Compliant
Typical Applications
• Flat Panel TVs
• Power Supply
• Industrial
• Wireless Handsets
• Automotive Modules
MAXIMUM RATINGS Single Diode (T
A
= 25°C)
Rating
Symbol Max Unit
Reverse Voltage V
R
350 V
Forward Current (DC) I
F
200 mA
Non−Repetitive Peak Forward Current
(Square Wave, T
J
= 25°C prior to surge)
t = 10 s
t = 100 s
t = 1 ms
t = 10 ms
I
FSM
12
5
2
1.5
A
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation
T
A
= 25°C
Derate above 25°C
P
D
(Note 1) 250
2
mW
mW/°C
Thermal Resistance,
Junction to Ambient
R
JA
(Note 1)
500 °C/W
Junction and Storage Temperature
Range
T
J
, T
stg
−55 to
+150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−4 100 mm
2
2 oz Cu PCB
www.onsemi.com
MARKING
DIAGRAM
SOD−323
CASE 477
STYLE 1
Device Package Shipping
†
ORDERING INFORMATION
NSD350HT1G
SOD−323
(Pb−Free)
3000 / Tape &
Reel
AJ = Specific Device Code
M = Date Code
G = Pb−Free Package
AJ MG
G
(Note: Microdot may be in either location)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
NSVD350HT1G
1
CATHODE
2
ANODE
NSD350H
www.onsemi.com
2
Table 1. ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
Characteristic
Symbol Min Typ Max Unit
Reverse Breakdown Voltage (I
R
= 10 µA)
V
(BR)R
350 V
Reverse Leakage (V
R
= 300 V) I
R
150 nA
Reverse Leakage (V
R
= 350 V) I
R
5
A
Forward Voltage (I
F
= 100 mA) V
F
1.1 V
Total Capacitance (V
R
= 0 V, f = 1.0 MHz) C
T
5.0 pF
Reverse Recovery Time (I
F
= I
R
= 10 mA, I
R
(rec) = 1.0 mA, Figure 1) t
rr
55 ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (I
F
) of 10 mA.
Notes: 2. Input pulse is adjusted so I
R(peak)
is equal to 10 mA.
Notes: 3. t
p
» t
rr
+10 V
2 k
820
0.1 F
DUT
V
R
100 H
0.1 F
50 OUTPUT
PULSE
GENERATOR
50 INPUT
SAMPLING
OSCILLOSCOPE
t
r
t
p
T
10%
90%
I
F
I
R
t
rr
T
i
R(REC)
= 1 mA
OUTPUT PULSE
(I
F
= I
R
= 10 mA; measured
at i
R(REC)
= 1 mA)
I
F
INPUT SIGNAL
Figure 1. Recovery Time Equivalent Test Circuit
NSD350H
www.onsemi.com
3
TYPICAL CHARACTERISTICS
Figure 2. Reverse Leakage Current Figure 3. Forward Voltage
V
R
, REVERSE VOLTAGE (V) V
F
, FORWARD VOLTAGE (V)
300250200 350150100500
1E−11
0.90.80.70.60.50.40.30.2
1
10
100
Figure 4. Total Capacitance
V
R
, REVERSE VOLTAGE (V)
302520151050
0
0.2
0.6
0.8
1.2
1.4
1.8
2.0
I
R
, LEAKAGE CURRENT (A)
I
F
, FORWARD CURRENT (mA)
C
T
, TOTAL CAPACITANCE (pF)
1E−10
1E−09
1E−08
1E−07
1E−06
1E−05
1E−04
0.4
1.0
1.6
T
J
= 25°C
f = 1 MHz
1.0 1.1
150°C
125°C
−55°C25°C85°C
150°C
125°C
−55°C
25°C
85°C
P1-P3P4-P4

NSD350HT1G

Mfr. #:
Buy NSD350HT1G
Manufacturer:
ON Semiconductor
Description:
Diodes - General Purpose, Power, Switching SS SOD323 SWCH DIO 3
Lifecycle:
New from this manufacturer.
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