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APTGT300TL60G

P1-P3P4-P6P7-P8
APTGT300TL60G
APTGT300TL60G – Rev2 October, 2012
www.microsemi.com
1-8
E1
NEUTRAL
E4
OUT
0/VBUS
G2
E2
G1
G3
E3
VBUS
G4
Q1 to Q4 Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
See application note
APT0502 on www.microsemi.com
0/VBUS
OUT
CR6
CR5
NEUTRAL
VBUS
E3
E4
G3
G1
G2
E2
Q4
Q3
G4
E1
Q1
Q2
Symbol Parameter Max ratings Unit
V
CES
Collector - Emitter Breakdown Voltage 600 V
T
C
= 25°C
400
I
C
Continuous Collector Current
T
C
= 80°C
300
I
CM
Pulsed Collector Current T
C
= 25°C 600
A
V
GE
Gate – Emitter Voltage ±20 V
P
D
Maximum Power Dissipation
T
C
= 25°C
935 W
RBSOA Reverse Bias Safe Operating Area T
j
= 150°C 600A @ 550V
V
CES
= 600V
I
C
= 300A @ Tc = 80°C
Application
Solar converter
Uninterruptible Power Supplies
Features
Trench + Field Stop IGBT3
Technology
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- RBSOA and SCSOA rated
Kelvin emitter for easy drive
Very low stray inductance
- Symmetrical design
- M5 power connectors
High level of integration
Benefits
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Low profile
RoHS Compliant
Three level inverter
Trench + Field Stop IGBT3
Power Module
CR1
CR2
CR3
CR4
APTGT300TL60G
APTGT300TL60G – Rev2 October, 2012
www.microsemi.com
2-8
All ratings @ T
j
= 25°C unless otherwise specified
Q1 to Q4 Electrical Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
I
CES
Zero Gate Voltage Collector Current V
GE
= 0V, V
CE
= 600V 350 µA
T
j
= 25°C 1.5 1.9
V
CE(sat)
Collector Emitter Saturation Voltage
V
GE
=15V
I
C
= 300A
T
j
= 150°C 1.7
V
V
GE(th)
Gate Threshold Voltage V
GE
= V
CE
, I
C
= 5 mA 5.0 5.8 6.5 V
I
GES
Gate – Emitter Leakage Current V
GE
= 20V, V
CE
= 0V 800 nA
Q1 to Q4 Dynamic Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
C
ies
Input Capacitance 18.4
C
oes
Output Capacitance 1.16
C
res
Reverse Transfer Capacitance
V
GE
= 0V
V
CE
= 25V
f = 1MHz
0.54
nF
Q
G
Gate charge
V
GE
=±15V, I
C
=300A
V
CE
=300V
3.2 µC
T
d(on)
Turn-on Delay Time 115
T
r
Rise Time 45
T
d(off)
Turn-off Delay Time 225
T
f
Fall Time
Inductive Switching (25°C)
V
GE
= ±15V
V
Bus
= 300V
I
C
= 300A
R
G
= 2.2
55
ns
T
d(on)
Turn-on Delay Time 130
T
r
Rise Time 50
T
d(off)
Turn-off Delay Time 300
T
f
Fall Time
Inductive Switching (150°C)
V
GE
= ±15V
V
Bus
= 300V
I
C
= 300A
R
G
= 2.2
70
ns
T
j
= 25°C 1.7
E
on
Turn on Energy
T
j
= 150°C 3
mJ
T
j
= 25°C 8.2
E
off
Turn off Energy
V
GE
= ±15V
V
Bus
= 300V
I
C
= 300A
R
G
= 2.2
T
j
= 150°C 10.6
mJ
I
sc
Short Circuit data
V
GE
≤15V ; V
Bus
= 360V
t
p
≤ 6µs ; T
j
= 150°C
1500 A
R
thJC
Junction to Case Thermal Resistance
0.16 °C/W
APTGT300TL60G
APTGT300TL60G – Rev2 October, 2012
www.microsemi.com
3-8
CR1 to CR4 diode ratings and characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
V
RRM
Maximum Peak Repetitive Reverse Voltage
600 V
T
j
= 25°C 150
I
RM
Maximum Reverse Leakage Current V
R
=600V
T
j
= 150°C 400
µA
I
F
DC Forward Current
Tc = 80°C 200 A
T
j
= 25°C 1.6 2
V
F
Diode Forward Voltage
I
F
= 200A
V
GE
= 0V
T
j
= 150°C 1.5
V
T
j
= 25°C 125
t
rr
Reverse Recovery Time
T
j
= 150°C 220
ns
T
j
= 25°C 9.4
Q
rr
Reverse Recovery Charge
T
j
= 150°C 19.8
µC
T
j
= 25°C 2.2
E
rr
Reverse Recovery Energy
I
F
= 200A
V
R
= 300V
di/dt =2800A/µs
T
j
= 150°C 4.8
mJ
R
thJC
Junction to Case Thermal Resistance
0.39 °C/W
CR5 & CR6 diode ratings and characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
V
RRM
Maximum Peak Repetitive Reverse Voltage
600 V
T
j
= 25°C 150
I
RM
Maximum Reverse Leakage Current V
R
=600V
T
j
= 150°C 400
µA
I
F
DC Forward Current
Tc = 80°C 300 A
T
j
= 25°C 1.6 2
V
F
Diode Forward Voltage
I
F
= 300A
V
GE
= 0V
T
j
= 150°C 1.5
V
T
j
= 25°C 130
t
rr
Reverse Recovery Time
T
j
= 150°C 225
ns
T
j
= 25°C 13.7
Q
rr
Reverse Recovery Charge
T
j
= 150°C 29
µC
T
j
= 25°C 3.2
E
rr
Reverse Recovery Energy
I
F
= 300A
V
R
= 300V
di/dt =4000A/µs
T
j
= 150°C 7
mJ
R
thJC
Junction to Case Thermal Resistance
0.29 °C/W
Thermal and package characteristics
Symbol Characteristic Min Typ Max Unit
V
ISOL
RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz
4000 V
T
J
Operating junction temperature range -40 175
T
STG
Storage Temperature Range -40 125
T
C
Operating Case Temperature -40 100
°C
To heatsink M6 3 5
Torque Mounting torque
For terminals M5 2 3.5
N.m
Wt Package Weight 300 g
P1-P3P4-P6P7-P8

APTGT300TL60G

Mfr. #:
Buy APTGT300TL60G
Manufacturer:
Microchip / Microsemi
Description:
IGBT Modules CC6182
Lifecycle:
New from this manufacturer.
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