Cypress Semiconductor Corporation • 198 Champion Court • San Jose, CA 95134-1709 • 408-943-2600
Document Number: 002-13915 Rev. *C Revised April 05, 2017
S70GL02GT
2-Gbit (256-MB) 3.0 V Flash Memory
General Description
The Cypress S70GL02GT 2-Gigabit MirrorBit
®
Flash memory device is fabricated on 45-nm MirrorBit
®
Eclipse
™
process technology.
This device offers a fast page access time of 25 ns with a corresponding random access time of 110 ns. It features a Write Buffer
that allows a maximum of 256 words/512 bytes to be programmed in one operation, resulting in faster effective programming time
than standard single byte/word programming algorithms. This makes the device an ideal product for today’s embedded applications
that require higher density, better performance and lower power consumption.
This document contains information for the S70GL02GT device, which is a dual-die stack of two S29GL01GT dies. For detailed
specifications, refer to the discrete die datasheet provided in the below table.
Distinctive Characteristics
CMOS 3.0-V Core with Versatile I/O™
Two 1024 Megabit (S29GL01GT) in a single 64-ball fortified-
BGA package (see the S29GL01GT datasheet for full
specifications)
45 nm MirrorBit Eclipse process technology
Single supply (V
CC
) for read/program/erase (2.7 V to 3.6 V)
Versatile I/O feature
– Wide I/O voltage (V
IO
): 1.65 V to V
CC
×8 and ×16 data bus
16-word/32-byte page read buffer
512-byte programming buffer
– Programming in page multiples, up to a maximum of
512 bytes
Sector erase
– Uniform 128-KB sectors
– S70GL02GT: 2048 sectors
Suspend and Resume commands for Program and Erase
operations
Status Register, Data Polling, and Ready/Busy pin methods
to determine device status
Advanced Sector Protection (ASP)
– Volatile and nonvolatile protection methods for each sector
Separate 1024-bye One Time Program (OTP) array with two
lockable regions
– Each device supports Common Flash Interface (CFI)
WP# input
– Protects the last sector of the device, regardless of sector
protection settings
Temperature range/grade
– Industrial (–40 °C to +85 °C)
– Industrial Plus (–40 °C to +105 °C)
– Automotive, AEC-Q100 Grade 3 (–40 °C to +85 °C)
– Automotive, AEC-Q100 Grade 2 (–40 °C to +105 °C)
100,000 Program-Erase cycles
20-year data retention
Packaging options
– 64-ball LSH fortified BGA, 13 mm × 11 mm
Document Cypress Document Number
S29GL01GT, S29GL512T Datasheet 002-00247
