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IRKU91/12A

P1-P3P4-P6P7-P9
Parameters IRKU/V71 IRKU/V91 Units
I
T(AV)
@ 85°C 75 95 A
I
T(RMS)
115 150 A
I
TSM
@ 50Hz 1665 1785 A
@ 60Hz 1740 1870 A
I
2
t @ 50Hz 13.86 15.91 KA
2
s
@ 60Hz 12.56 14.52 KA
2
s
I
2
√t 138.6 159.1 KA
2
√s
V
RRM
range 400 to 1600 V
T
STG
- 40 to 125
o
C
T
J
- 40 to125
o
C
Major Ratings and Characteristics
75 A
95 A
ADD-A-pak
TM
GEN V Power ModulesTHYRISTOR/ THYRISTOR
IRKU/V71, 91 SERIES
1
Bulletin I27135 rev. F 10/02
www.irf.com
Features
High Voltage
Industrial Standard Package
Thick Al metal die and double stick bonding
Thick copper baseplate
UL E78996 approved
3500V
RMS
isolating voltage
Benefits
Up to 1600V
Full compatible TO-240AA
High Surge capability
Easy Mounting on heatsink
Al
2
0
3
DBC insulator
Heatsink grounded
Mechanical Description
The Generation V of Add-A-pak module combine the
excellent thermal performance obtained by the usage of
Direct Bonded Copper substrate with superior
mechanical ruggedness, thanks to the insertion of a solid
Copper baseplate at the bottom side of the device.
The Cu baseplate allow an easier mounting on the
majority of heatsink with increased tolerance of surface
roughness and improve thermal spread.
The Generation V of AAP module is manufactured
without hard mold, eliminating in this way any possible
direct stress on the leads.
Electrical Description
These modules are intended for general purpose high
voltage applications such as high voltage regulated power
supplies, lighting circuits, temperature and motor speed
control circuits, UPS and battery charger.
The electrical terminals are secured against axial pull-out:
they are fixed to the module housing via a click-stop
feature already tested and proved as reliable on other IR
modules.
IRKU/V71, 91 Series
2
Bulletin I27135 rev. F 10/02
www.irf.com
V
RRM
, maximum V
RSM
, maximum V
DRM
, max. repetitive I
RRM
Voltage repetitive non-repetitive peak off-state voltage, I
DRM
Code peak reverse voltage peak reverse voltage gate open circuit 125°C
-VVVmA
04 400 500 400
IRKU/V71, 91 08 800 900 800 15
12 1200 1300 1200
16 1600 1700 1600
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Type number
I
T(AV)
Max. average on-state 75 95 180
o
conduction, half sine wave,
current T
C
= 85
o
C
I
T(RMS
)
Max. RMS on-state 115 150 DC
current
@T
C
80 75 °C
I
TSM
Max. peak, one cycle 1665 1785 t=10ms No voltage
non-repetitive on-state 1740 1870 t=8.3ms reapplied
current 1400 1500 t=10ms 100% V
RRM
1470 1570 t=8.3ms reapplied
1850 2000 t=10ms T
J
= 25
o
C,
1940 2100 t=8.3ms no voltage reapplied
I
2
t Max. I
2
t for fusing 13.86 15.91 t=10ms No voltage
12.56 14.52 t=8.3ms reapplied
9.80 11.25 t=10ms 100% V
RRM
8.96 10.27 t=8.3ms reapplied
17.11 20.00 t=10ms T
J
= 25
o
C,
15.60 18.30 t=8.3ms no voltage reapplied
I
2
√t Max. I
2
√t for fusing (1) 138.6 159.1 KA
2
√s t=0.1 to 10ms, no voltage reapplied
V
T(TO)
Max. value of threshold 0.82 0.80 Low level (3)
voltage (2) 0.85 0.85 High level (4)
r
t
Max. value of on-state 3.00 2.40 Low level (3)
slope resistance (2) 2.90 2.25 High level (4)
V
TM
Max. peak on-state I
TM
= π x I
T(AV)
voltage I
FM
= π x I
F(AV)
di/dt Max. non-repetitive rate T
J
= 25
o
C, from 0.67 V
DRM
,
of rise of turned on I
TM
=π x I
T(AV)
, I
g
= 500mA,
current t
r
< 0.5 µs, t
p
> 6 µs
T
J
= 25
o
C, anode supply = 6V,
resistive load, gate open circuit
I
L
Max. latching current 400 T
J
= 25
o
C, anode supply = 6V,resistive load
T
J
= T
J
max
T
J
= T
J
max
(1) I
2
t for time t
x
= I
2
√t
x √t
x
. (2) Average power = V
T(TO)
x I
T(AV)
+ r
t
x (I
T(RMS)
)
2
(3) 16.7% x π x I
AV
< I < π x I
AV
(4) I > π x I
AV
I
H
Max. holding current 200
Initial T
J
= T
J
max.
150 A/µs
KA
2
s
V
mΩ
mA
Sinusoidal
half wave,
Initial T
J
= T
J
max.
Parameters IRKU/V71 IRKU/V91 Units Conditions
On-state Conduction
A
A
1.59 1.58 V
T
J
= 25°C
IRKU/V71, 91 Series
3
Bulletin I27135 rev. F 10/02
www.irf.com
I
RRM
Max. peak reverse and
I
DRM
off-state leakage current
at V
RRM
, V
DRM
2500 (1 min) 50 Hz, circuit to base, all terminals
3500 (1 sec) shorted
dv/dt Max. critical rate of rise T
J
= 125
o
C, linear to 0.67 V
DRM
,
of off-state voltage (5) gate open circuit
T
J
Junction operating
temperature range
T
stg
Storage temper. range - 40 to 125
R
thJC
Max. internal thermal
resistance, junction 0.165 0.135 Per module, DC operation
to case
R
thCS
Typical thermal resistance
case to heatsink
T Mounting torque ± 10%
to heatsink
busbar 3
wt Approximate weight 110 (4) gr (oz)
Case style TO-240AA JEDEC
15 mA T
J
= 125
o
C, gate open circuit
Thermal and Mechanical Specifications
Parameters IRK.71 IRK.91 Units Conditions
- 40 to 125
0.1
5
Triggering
(5) Available with dv/dt = 1000V/µs, to complete code add S90 i.e. IRKU91/16AS90.
A mounting compound is recommended
and the torque should be rechecked after
a period of 3 hours to allow for the spread
of the compound
°C
K/W
Nm
Mounting surface flat, smooth and greased
V
INS
RMS isolation voltage V
P
GM
Max. peak gate power 12 12
P
G(AV)
Max. average gate power 3.0 3.0
I
GM
Max. peak gate current 3.0 3.0 A
-V
GM
Max. peak negative
gate voltage
4.0 T
J
= - 40°C
2.5 T
J
= 25°C
1.7 T
J
= 125°C
270 T
J
= - 40°C
150 mA T
J
= 25°C
80 T
J
= 125°C
V
GD
Max. gate voltage
that will not trigger
I
GD
Max. gate current
that will not trigger
Parameters IRKU/V71 IRKU/V91 Units Conditions
0.25 V
6mA
Anode supply = 6V
resistive load
V
GT
Max. gate voltage
required to trigger
Anode supply = 6V
resistive load
I
GT
Max. gate current
required to trigger
W
V
10
T
J
= 125
o
C,
rated V
DRM
applied
T
J
= 125
o
C,
rated V
DRM
applied
500 V/µs
Parameters IRKU/V71, 91 Units Conditions
Blocking
Sine half wave conduction Rect. wave conduction
Devices Units
180
o
120
o
90
o
60
o
30
o
180
o
120
o
90
o
60
o
30
o
IRKU/V71 0.06 0.07 0.09 0.12 0.18 0.04 0.08 0.10 0.13 0.18
IRKU/V91 0.04 0.05 0.06 0.08 0.12 0.03 0.05 0.06 0.08 0.12
°C/W
∆R Conduction (per Junction)
(The following table shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC)
P1-P3P4-P6P7-P9

IRKU91/12A

Mfr. #:
Buy IRKU91/12A
Manufacturer:
Vishay
Description:
SCR CC 2SCR 1200V 90A ADD-A-PAK
Lifecycle:
New from this manufacturer.
Delivery:
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