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NCV8177BMX250TCG

P1-P3P4-P6P7-P9P10-P11
© Semiconductor Components Industries, LLC, 2016
May, 2016 − Rev. 0
1 Publication Order Number:
NCV8177/D
NCV8177
Linear Voltage Regulator
Fast Transient Response
500 mA with Enable
The NCV8177 is CMOS LDO regulator featuring 500 mA output
current. The input voltage is as low as 1.6 V and the output voltage can
be set from 0.75 V. It provides very stable and accurate voltage with
low noise and high Power Supply Rejection Ratio (PSRR) suitable for
RF applications. The NCV8177 is suitable for powering RF blocks of
automotive infotainment systems and other power sensitive device.
Due to low power consumption the NCV8177 offers high efficiency
and low thermal dissipation. Small 4−pin XDFN4 1.0 mm x 1.0 mm
package makes the device especially suitable for space constrained
applications.
Features
• Operating Input Voltage Range: 1.6 V to 5.5 V
• Output Voltage Range: 0.7 V to 3.6 V
• Quiescent Current typ. 60 mA
• Low Dropout: 200 mV Typ. at 500 mA, V
OUT−NOM
= 1.8 V
• High Output Voltage Accuracy ±0.8%
• Stable with Small 1 mF Ceramic Capacitors
• Over−current Protection
• Thermal Shutdown Protection: 175°C
• With (NCV8177A) and Without (NCV8177B) Output Discharge
Function
• Available in XDFN4 1 mm x 1 mm x 0.4 mm Package
• NCV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q100
Qualified and PPAP Capable
• This is a Pb−Free Device
Typical Applications
• Lights
• Instrument Equipment
• Cameras, Camcorders, Sensors
Figure 1. Typical Application
Schematic
NCV8177
IN
EN
OUT
GND
C
OUT
1 μF
C
IN
1 μF
OFF
ON
VIN VOUT
MARKING DIAGRAM
XDFN4
CASE 711AJ
See detailed ordering, marking and shipping information on
page 10 of this data sheet.
ORDERING INFORMATION
(Top View)
www.onsemi.com
XX = Specific Device Code
M = Date Code
XX M
1
1
EPAD
OUT GND
IN EN
43
12
PINOUT DIAGRAM
NCV8177
www.onsemi.com
2
Figure 2. Internal Block Diagram
IN
EN
OUT
GND
VOLTAGE REFERENCE
AND
SOFT−START
0.7 V
THERMAL
SHUTDOWN
VOLTAGE REFERENCE
AND
SOFT−START
0.7 V
THERMAL
SHUTDOWN
NCV8177A (with active discharge) NCV8177B (without active discharge)
IN
EN
OUT
GND
PIN FUNCTION DESCRIPTION
Pin No. Pin Name Description
1 OUT Regulated output voltage pin
2 GND Power supply ground pin
3 EN Enable pin (active “H”)
4 IN Power supply input voltage pin
− EPAD Exposed pad should be tied to ground plane for better power dissipation
ABSOLUTE MAXIMUM RATINGS
Rating Symbol Value Unit
Input Voltage (Note 1) IN −0.3 to 6.0 V
Output Voltage OUT −0.3 to V
IN
+ 0.3 V
Chip Enable Input EN −0.3 to 6.0 V
Output Current I
OUT
Internally Limited mA
Operating Ambient Temperature Range T
A
−40 to +125 °C
Maximum Junction Temperature T
J(MAX)
150 °C
Storage Temperature T
STG
−55 to 150 °C
ESD Capability, Human Body Model (Note 2) ESD
HBM
2000 V
ESD Capability, Machine Model (Note 2) ESD
MM
200 V
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Refer to ELECTRICAL CHARACTERISTICS and APPLICATION INFORMATION for Safe Operating Area.
2. This device series incorporates ESD protection and is tested by the following methods:
ESD Human Body Model tested per JESD22−A114
ESD Machine Model tested per JESD22−A115
Latchup Current Maximum Rating tested per JEDEC standard: JESD78
THERMAL CHARACTERISTICS
Rating Symbol Value Unit
Thermal Characteristics, XDFN4 (Note 3)
Thermal Resistance, Junction−to−Air
R
q
JA
223 °C/W
3. Measured according to JEDEC board specification. Detailed description of the board can be found in JESD51−7
RECOMMENDED OPERATING CONDITIONS
Rating Symbol Min Max Unit
Input Voltage V
IN
1.6 5.5 V
Junction Temperature T
J
−40 125 °C
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
NCV8177
www.onsemi.com
3
ELECTRICAL CHARACTERISTICS
V
IN
= V
OUT−NOM
+ 0.5 V or V
IN
= 1.6 V (whichever is higher), V
EN
= 1.2 V, I
OUT
= 1 mA, C
IN
= C
OUT
= 1.0 mF, T
J
= 25°C
The specifications in bold are guaranteed at −40°C ≤ T
J
≤ 125°C.
Parameter
Test Conditions Symbol Min Typ Max Unit
Input Voltage V
IN
1.6 5.5 V
Output Voltage V
OUT_NOM
≥ 1.8 V
T
J
= +25°C
V
OUT
−0.8 0.8
%
−40°C ≤ T
J
≤ 125°C −2.0 1.0
V
OUT_NOM
< 1.8 V
T
J
= +25°C −1.2 1.2
−40°C ≤ T
J
≤ 125°C −2.5 1.5
Line Regulation V
IN
= V
OUT−NOM
+ 0.5 V to 5.25 V
V
IN
≥ 1.6 V
LineReg 0.02 0.15 %/V
Load Regulation 1 mA ≤ I
OUT
≤ 500 mA LoadReg 1 10 mV
Dropout Voltage (Note 4) I
OUT
= 500 mA
1.4 V ≤ V
OUT
< 1.8 V
V
DO
295 410
mV
1.8 V ≤ V
OUT
< 2.1 V 200 305
2.1 V ≤ V
OUT
< 2.5 V 160 260
2.5 V ≤ V
OUT
< 3.0 V 130 220
3.0 V ≤ V
OUT
< 3.6 V 110 190
Quiescent Current I
OUT
= 0 mA I
Q
60 90
mA
Standby Current V
EN
= 0 V I
STBY
0.1 1.5
mA
Output Current Limit V
OUT
= V
OUT−NOM
− 100 mV I
OUT
510 800 mA
Short Circuit Current V
OUT
= 0 V I
SC
510 800 mA
EN Pin Threshold Voltage
EN Input Voltage “H” V
ENH
1.0
V
EN Input Voltage “L” V
ENL
0.4
Enable Input Current V
EN
= V
IN
= 5.5 V I
EN
0.15 0.6
mA
Power Supply Rejection Ratio f = 1 kHz, Ripple 0.2 Vp−p,
V
IN
= V
OUT−NOM
+ 1.0 V, I
OUT
= 30 mA
(V
OUT
≤ 2.0 V, V
IN
= 3.0 V)
PSRR 75 dB
Output Noise f = 10 Hz to 100 kHz 54
mV
RMS
Output Discharge Resistance
(NCV8177A option only)
V
IN
= 4.0 V, V
EN
= 0 V, V
OUT
= V
OUT−NOM
R
ACTDIS
60
W
Thermal Shutdown Temperature Temperature rising from 25°C TSD_TEMP 175 °C
Thermal Shutdown Hysteresis Temperature falling from T
SD_TEMP
TSD_HYST 20 °C
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Measured when the output voltage falls 3% below the nominal output voltage (the voltage measured under the condition V
IN
= V
OUT−NOM
+ 0.5 V).
P1-P3P4-P6P7-P9P10-P11

NCV8177BMX250TCG

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ON Semiconductor
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