MBR2535CTLG
www.onsemi.com
2
MAXIMUM RATINGS (Per Leg)
Rating
Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
35 V
Average Rectified Forward Current
(T
C
= 142°C per Diode)
(T
C
= 142°C per Device)
I
F(AV)
12.5
25
A
Peak Repetitive Forward Current, per Leg (Sq Wave, 20 kHz, T
C
= 139°C) I
FRM
25 A
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions, Halfwave, Single Phase, 60 Hz)
I
FSM
150 A
Peak Repetitive Reverse Surge Current (2.0 ms, 1.0 kHz)
I
RRM
1.0 A
Storage Temperature Range T
stg
−65 to +150 °C
Operating Junction Temperature (Note 1) T
J
−65 to +150 °C
Voltage Rate of Change (Rated V
R
) dv/dt 10,000
V/ms
Controlled Avalanche Energy W
aval
20 mJ
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dP
D
/dT
J
< 1/R
q
JA
.
THERMAL CHARACTERISTICS
Characteristic Conditions Symbol Max Unit
Maximum Thermal Resistance, Junction−to−Case Min. Pad
R
q
JC
2.0
°C/W
Maximum Thermal Resistance, Junction−to−Ambient Min. Pad
R
q
JA
75.0
ELECTRICAL CHARACTERISTICS
Characteristic Symbol Min Typical Max Unit
Instantaneous Forward Voltage (Note 2)
(i
F
= 25 Amps, T
j
= 25°C)
(i
F
= 12.5 Amps, Tj = 25°C)
(i
F
= 12.5 Amps, Tj = 125°C)
v
F
−
−
−
0.51
0.41
0.33
0.55
0.47
0.41
V
Instantaneous Reverse Current (Note 2)
(Rated dc Voltage, Tj = 25°C)
(Rated dc Voltage, Tj = 125°C)
i
R
−
−
0.8
300
5.0
500
mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
