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IRFTS8342TRPBF

P1-P3P4-P6P7-P8
02/23/12
IRFTS8342PbF
HEXFET
®
Power MOSFET
Notes through are on page 2
Features and Benefits
www.irf.com 1
Applications
System/Load Switch
TSOP-6
Absolute Maximum Ratings
Parameter Units
V
DS
Drain-to-Source Voltage
V
GS
Gate-to-Source Voltage
I
D
@ T
A
= 25°C
Continuous Drain Current, V
GS
@ 10V
I
D
@ T
A
= 70°C
Continuous Drain Current, V
GS
@ 10V
I
DM
Pulsed Drain Current
P
D
@T
A
= 25°C Power Dissipation
P
D
@T
A
= 70°C
Power Dissipation
Linear Derating Factor W/°C
T
J
Operating Junction and
T
STG
Storage Temperature Range
V
A
W
°C
Max.
8.2
6.6
80
±20
30
-55 to + 150
2.0
0.02
1.3
V
DS
30 V
V
GS
±
20 V
R
DS(on) max
(@V
GS
= 10V)
19
m
R
DS(on) max
(@V
GS
= 4.5V)
29
m
Q
g (typical)
4.8
nC
I
D
(@T
A
= 25°C)
8.2 A
Note
Form
Quantity
IRFTS8342TRPBF
TSOP-6
Tape and Reel
3000
Orderable part number Package Type Standard Pack
Resulting Benefits
Industry-Standard TSOP-6 Package
Multi-Vendor Compatibility
RoHS Compliant Containing no Lead, no Bromide and no Halogen
Environmentally Friendlier
MSL1, Consumer Qualification
Increased Reliability
PD - 97728A
IRFTS8342PbF
2 www.irf.com
S
D
G
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width 400μs; duty cycle 2%.
When mounted on 1 ich square copper board.
Static @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
BV
DSS
Drain-to-Source Breakdown Voltage 30 ––– ––– V
V
DSS
/T
J
Breakdown Voltage Temp. Coefficient ––– 18 ––– mV/°C
R
DS(on)
––– 15 19
––– 22 29
V
GS(th)
Gate Threshold Voltage 1.35 1.80 2.35 V
V
DS
= V
GS
, I
D
= 25μA
V
GS(th)
Gate Threshold Voltage Coefficient ––– -5.7 ––– mV/°C
I
DSS
Drain-to-Source Leakage Current ––– ––– 1.0
––– ––– 150
I
GSS
Gate-to-Source Forward Leakage ––– ––– 100
Gate-to-Source Reverse Leakage ––– ––– -100
gfs Forward Transconductance 12 ––– ––– S
Q
g
Total Gate Charge ––– 4.8 –––
Q
gs
Gate-to-Source Charge ––– 2.1 –––
Q
gd
Gate-to-Drain Charge ––– 1.6 –––
R
G
Gate Resistance ––– 2.6 –––
t
d(on)
Turn-On Delay Time ––– 7.3 –––
t
r
Rise Time –––15–––
t
d(off)
Turn-Off Delay Time ––– 9.1 –––
t
f
Fall Time ––– 8.2 –––
C
iss
Input Capacitance ––– 560 –––
C
oss
Output Capacitance ––– 102 –––
C
rss
Reverse Transfer Capacitance ––– 48 –––
Diode Characteristics
Parameter Min. Typ. Max. Units
I
S
Continuous Source Current
(Body Diode)
I
SM
Pulsed Source Current
(Body Diode)
V
SD
Diode Forward Voltage ––– ––– 1.0 V
t
rr
Reverse Recovery Time ––– 8.2 12 ns
Q
rr
Reverse Recovery Charge ––– 4.5 5.4 nC
Thermal Resistance
Parameter Units
R
JA
Junction-to-Ambient °C/W
Conditions
ƒ = 1.0MHz
V
GS
= 0V
V
DS
= 25V
V
DS
= 24V, V
GS
= 0V
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 8.2A
V
GS
= 4.5V, I
D
= 6.6A
m
μA
T
J
= 25°C, I
F
= 6.6A, V
DD
= 24V
di/dt = 100/μs
T
J
= 25°C, I
S
= 6.6A, V
GS
= 0V
showing the
integral reverse
p-n junction diode.
MOSFET symbol
I
D
= 6.6A
R
G
= 6.8
V
DS
= 10V, I
D
= 6.6A
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
V
DD
= 15V, V
GS
= 4.5V
I
D
= 6.6.A
V
DS
= 15V
V
GS
= 20V
V
GS
= -20V
V
GS
= 4.5V
ns
pF
Static Drain-to-Source On-Resistance
A
––– –––
––– –––
2.5
80
nA
nC
Max.
62.5
Typ.
–––
IRFTS8342PbF
www.irf.com 3
Fig 4. Normalized On-Resistance vs. Temperature
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage
Fig 5. Typical Capacitance vs.Drain-to-Source Voltage
0.01 0.1 1 10 100
V
DS
, Drain-to-Source Voltage (V)
0.01
0.1
1
10
100
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
VGS
TOP 10V
8.0V
7.0V
4.5V
3.5V
3.0V
2.75V
BOTTOM 2.5V
60μs PULSE WIDTH
Tj = 25°C
2.5V
0.1 1 10 100
V
DS
, Drain-to-Source Voltage (V)
1
10
100
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
2.5V
60μs PULSE WIDTH
Tj = 150°C
VGS
TOP 10V
8.0V
7.0V
4.5V
3.5V
3.0V
2.75V
BOTTOM 2.5V
2 3 4 5 6 7
V
GS
, Gate-to-Source Voltage (V)
1.0
10
100
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
T
J
= 25°C
T
J
= 150°C
V
DS
= 15V
60μs PULSE WIDTH
-60 -40 -20 0 20 40 60 80 100 120 140 160
T
J
, Junction Temperature (°C)
0.6
0.8
1.0
1.2
1.4
1.6
R
D
S
(
o
n
)
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
(
N
o
r
m
a
l
i
z
e
d
)
I
D
= 8.2A
V
GS
= 10V
1 10 100
V
DS
, Drain-to-Source Voltage (V)
10
100
1000
10000
C
,
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
V
GS
= 0V, f = 1 MHZ
C
iss
= C
gs
+ C
gd
, C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
C
oss
C
rss
C
iss
02468101214
Q
G
,
Total Gate Charge (nC)
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
V
G
S
,
G
a
t
e
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
V
DS
= 24V
V
DS
= 15V
V
DS
= 6.0V
I
D
= 6.6A
P1-P3P4-P6P7-P8

IRFTS8342TRPBF

Mfr. #:
Buy IRFTS8342TRPBF
Manufacturer:
Infineon Technologies
Description:
MOSFET 30V 8.2A 19mOhm 4.8 Qg
Lifecycle:
New from this manufacturer.
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