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PBSS4350Z,135

P1-P3P4-P6P7-P9P10-P10
2003 May 13 3
NXP Semiconductors Product data sheet
50 V low V
CEsat
NPN transistor
PBSS4350Z
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Notes
1. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm
2
.
2. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 6 cm
2
.
3. For other mounting conditions see “Thermal considerations for SOT223 in the General Part of associated
Handbook”.
THERMAL CHARACTERISTICS
Notes
1. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm
2
.
2. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 6 cm
2
.
3. For other mounting conditions see “Thermal considerations for SOT223 in the General Part of associated
Handbook”.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter − 60 V
V
CEO
collector-emitter voltage open base − 50 V
V
EBO
emitter-base voltage open collector − 6 V
I
C
collector current (DC) − 3 A
I
CM
peak collector current − 5 A
I
BM
peak base current − 1 A
P
tot
total power dissipation T
amb
≤ 25 °C; notes 1 and 3 − 1.35 W
T
amb
≤ 25 °C; notes 2 and 3 − 2 W
T
stg
storage temperature −65 +150 °C
T
j
junction temperature − 150 °C
T
amb
operating ambient temperature −65 +150 °C
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to ambient in free air; notes 1 and 3 92 K/W
in free air; notes 2 and 3 62.5 K/W
2003 May 13 4
NXP Semiconductors Product data sheet
50 V low V
CEsat
NPN transistor
PBSS4350Z
CHARACTERISTICS
T
amb
= 25 °C unless otherwise specified.
Note
1. Pulse test: t
p
≤ 300 μs; δ ≤ 0.02.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
collector-base cut-off current V
CB
= 50 V; I
E
= 0 − − 100 nA
V
CB
= 50 V; I
E
= 0; T
j
= 150 °C − − 50 μA
I
EBO
emitter-base cut-off current V
EB
= 5 V; I
C
= 0 − − 100 nA
h
FE
DC current gain V
CE
= 2 V; I
C
= 500 mA 200 − −
V
CE
= 2 V; I
C
= 1 A; note 1 200 − −
V
CE
= 2 V; I
C
= 2 A; note 1 100 − −
V
CEsat
collector-emitter saturation
voltage
I
C
= 500 mA; I
B
= 50 mA − − 90 mV
I
C
= 1 A; I
B
= 50 mA − − 170 mV
I
C
= 2 A; I
B
= 200 mA; note 1 − − 290 mV
R
CEsat
equivalent on-resistance I
C
= 2 A; I
B
= 200 mA; note 1 − 110 <145 mΩ
V
BEsat
base-emitter saturation voltage I
C
= 2 A; I
B
= 200 mA; note 1 − − 1.2 V
V
BEon
base-emitter turn-on voltage V
CE
= 2 V; I
C
= 1 A; note 1 − − 1.1 V
f
T
transition frequency I
C
= 100 mA; V
CE
= 5 V; f = 100 MHz 100 − − MHz
C
c
collector capacitance V
CB
= 10 V; I
E
= I
e
= 0; f = 1 MHz − − 30 pF
2003 May 13 5
NXP Semiconductors Product data sheet
50 V low V
CEsat
NPN transistor
PBSS4350Z
handbook, halfpage
0
h
FE
I
C
(mA)
600
100
200
300
500
400
MGW175
10
−1
11010
2
10
3
10
4
(1)
(2)
(3)
Fig.2 DC current gain as a function of collector
current; typical values.
V
CE
= 2 V.
(1) T
amb
= 150 °C.
(2) T
amb
= 25 °C.
(3) T
amb
= −55 °C.
handbook, halfpage
0
0.2
I
C
(mA)
V
BE
(V)
1.2
0.4
0.8
0.6
1.0
MGW176
10
−1
11010
2
10
3
10
4
(1)
(2)
(3)
Fig.3 Base-emitter voltage as a function of
collector-current; typical values.
V
CE
= 2 V.
(1) T
amb
= −55 °C.
(2) T
amb
= 25 C.
(3) T
amb
= 150 °C.
handbook, halfpage
I
C
(mA)
10
3
10
2
10
1
MGW181
10
−1
11010
2
10
3
10
4
V
CEsat
(mV)
(1)
(2)
(3)
Fig.4 Collector-emitter saturation as a function of
collector current; typical values.
I
C
/I
B
= 20.
(1) T
amb
= 150 °C.
(2) T
amb
= 25 °C.
(3) T
amb
= −55 °C.
handbook, halfpage
I
C
(mA)
1.2
0.6
0.4
0.2
0
0.8
1.0
MGW178
10
−1
11010
2
10
3
10
4
V
BEsat
(V)
(1)
(2)
(3)
Fig.5 Base-emitter saturation voltage as a
function of collector current; typical values.
I
C
/I
B
= 20.
(1) T
amb
= 150 °C.
(2) T
amb
= 25 °C.
(3) T
amb
= −55 °C.
P1-P3P4-P6P7-P9P10-P10

PBSS4350Z,135

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Manufacturer:
Nexperia
Description:
Bipolar Transistors - BJT NPN 50V 3A
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