4
Figure 1. Relative intensity vs. wavelength.
Electrical/Optical Characteristics at T
A
= 25°C
Sym.
Description
HLMP-R100 HLMP-0301 HLMP-0401 HLMP-0504
Units
Test
ConditionsMin. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max.
2q
1/2
Included Angle
Between Half
Luminous
Intensity Points
100 100 100 100 Deg. Note 1.
Fig. 6
l
P
Peak Wavelength 645 635 583 565 nm Measure-
ment at
Peak
l
d
Dominant
Wavelength
637 626 585 569 nm Note 2.
Dl
1/2
Spectral Line
Halfwidth
20 40 36 28 nm
t
s
Speed of Response 30 90 90 500 ns
C Capacitance 30 16 18 18 pF V
F
= 0;
f = 1 MHz
Rq
J-PIN
Thermal Resistance 260 260 260 260 °C/W Junction
to Cathode
Lead
V
F
Forward Voltage 1.8 2.2 1.9 2.6 2.1 2.6 2.2 3.0 V I
F
= 20 mA
Figure 2.
V
R
Reverse Breakdown
Voltage
5.0 5.0 5.0 5.0 V
I
R
= 100 μA
h
v
Luminous Ecacy 80 145 500 595 lm/W Note 3.
Notes:
1. q
1/2
is the o-axis angle at which the luminous intensity is half the axial luminous intensity.
2. The dominant wavelength, l
d
, is derived from the CIE chromaticity diagram and represents the single wavelength which denes the color of the
device.
3. Radiant intensity, I
e
, in watts/steradian, may be found from the equation I
e
= I
v
/h
v
, where I
v
is the luminous intensity in candelas and h
v
is the
luminous ecacy in lumens/watt.
HIGH EFFICIENCY RED
WAVELENGTH – nm
RELATIVE INTENSITY
1.0
0.5
0
500 550 600 650 700 750
YELLOW
GREEN
T
A
= 25 °C
AlGaAs RED
