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DMP2200UDW-13

P1-P3P4-P6
DMP2200UDW
Document number: DS37689 Rev. 1 - 2
1 of 6
www.diodes.com
February 2015
© Diodes Incorporated
DMP
2200
U
DW
ADVANCE INFO R MA T I O N
Dual P-CHANNEL ENHANCEMENT MODE MOSFET
Summary
V
(BR)DSS
R
DS(on)
max
I
D
max
-20V
260mΩ @V
GS
= -4.5V
-0.9 A
500mΩ @V
GS
= -2.5V
1000mΩ @V
GS
= -1.8V
Description
This MOSFET is designed to minimize the on-state resistance
(R
DS(on)
) and yet maintain superior switching performance, making it
ideal for high-efficiency power management applications.
Applications
• Battery Disconnect Switch
• Load Switch for Power Management Functions
Features
• Low R
DS(ON)
– Minimizes Conduction
Losses
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• ESD Protected Gate
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
Mechanical Data
• Case: SOT363
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals Connections: See Diagram
• Terminals: Finish - Matte Tin Annealed over Alloy 42 L
eadframe.
Solderable per MIL-STD-202, Method 208
• Weight: 0.006 grams (Approximate)
Ordering Information
(Note 4)
Part Number
Case
Packaging
DMP2200UDW-7 SOT363 3,000/Tape & Reel
DMP2200UDW-13 SOT363 10,000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com.
Marking Information
SOT363
Date Code Key
Year
2014
2015
2016
2017
201
8
201
9
20
20
Code
B C D E F G H
Month
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
N
ov
Dec
Code
1 2 3 4 5 6 7 8 9 O N D
SOT363
Top View
Top View
Pin out
ESD PROTECTED
P22 = Marking Code
YM = Date Code Marking
Y or Y= Year (ex: B = 2014)
M = Month (ex: 9 = September)
S
1
D
1
D
2
S
2
G
1
G
2
D1
S1
G1
Gate Protection
Diode
D2
S2
G2
Gate Protection
Diode
Q1 P-CHANNEAL
Q2 P-CHANNEAL
DMP2200UDW
Document number: DS37689 Rev. 1 - 2
2 of 6
www.diodes.com
February 2015
© Diodes Incorporated
DMP
2200
U
DW
ADVANCE INFO R MA T I O N
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Units
Drain-Source Voltage
V
DSS
-20 V
Gate-Source Voltage
V
GSS
±8 V
Continuous Drain Current (Note 6)
T
A
= +25°C
T
A
= +85°C
I
D
-0.9
-0.7
A
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Units
Total Power Dissipation (Note 5)
P
D
0.45 W
Total Power Dissipation (Note 6) 0.6 W
Thermal Resistance, Junction to Ambient (Note 5)
Steady
State
R
θ
JA
275
°C/W
Thermal Resistance, Junction to Ambient (Note 6)
Steady
State
208
Thermal Resistance, Junction to Case
R
θ
J
C
72
Operating and Storage Temperature Range
T
J,
T
STG
-55 to +150 °C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
-20
V
V
GS
= 0V, I
D
= 250µA
Zero Gate Voltage Drain Current
I
DSS
-1 µA
V
DS
= -16V, V
GS
= 0V
Gate-Body Leakage
I
GSS
±
10
µA
V
GS
=
±
8V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
-0.4
-1.2 V
V
DS
= V
GS
, I
D
= -250µA
Static Drain-Source On-Resistance
R
DS (ON)
180
240
320
260
500
1,000
m
Ω
V
GS
= -4.5V, I
D
= -0.88A
V
GS
= -2.5V, I
D
= -0.71A
V
GS
= -1.8V, I
D
= -0.20A
Diode Forward Voltage
V
SD
-0.8 -1.2 V
V
GS
= 0V, I
S
= -0.48A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C
iss
184
pF
V
DS
= -10V, V
GS
= 0V
f
= 1.0MHz
Output Capacitance
C
oss
26.4
pF
Reverse Transfer Capacitance
C
rss
18.5
pF
Gate Resistance
R
g
221
Ω
V
DS
= V
GS
= 0V,f
= 1.0MHz
Total Gate Charge
Q
g
2.1
nC
V
GS
= -4.5V, V
DS
= -10V,
I
D
= -1.7A
Gate-Source Charge
Q
gs
0.4
nC
Gate-Drain Charge
Q
gd
0.5
nC
Turn-On Delay Time
t
D(ON)
9.8
ns
V
DD
= -10V, I
D
= -1.5A,
V
GS
= -4.5V, R
GEN
= 1
Ω
Turn-Off Delay Time
t
D(OFF)
24.4
ns
Turn-On Rise Time
t
r
88
ns
Turn-Off Fall Time
t
f
45
ns
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
DMP2200UDW
Document number: DS37689 Rev. 1 - 2
3 of 6
www.diodes.com
February 2015
© Diodes Incorporated
DMP
2200
U
DW
ADVANCE INFO R MA T I O N
0.0
1.0
2.0
3.0
4.0
5.0
0 1 2 3
4 5
I
,
D
R
A
I
N
C
U
R
R
E
N
T
(
A
)
D
V , DRAIN-SOURCE VOLTAGE (V)
DS
Figure 1 Typical Output Characteristic
V = -3.0V
GS
V = -4.5V
GS
V = -8.0V
GS
V = -1.2V
GS
V = -1.8V
GS
V = -2.0V
GS
V = -1.5V
GS
0
1
2
3
4
5
0 0.5
1
1.5 2 2.5 3
3.5
I
,
D
R
A
I
N
C
U
R
R
E
N
T
(
A
)
D
V , GATE-SOURCE VOLTAGE (V)
GS
Figure 2 Typical Transfer Characteristics
V = -5.0V
DS
T = -55°C
A
T = 25°C
A
T = 125°C
A
T = 150°C
A
T = 85°C
A
0.16
0.18
0.2
0.22
0.24
0.26
0.28
0.3
0 1 2 3 4 5
R
,
D
R
A
I
N
-
S
O
U
R
C
E
O
N
-
R
E
S
I
S
T
A
N
C
E
(
)
DS(ON)
Ω
I , DRAIN-SOURCE CURRENT (A)
D
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
V = -2.5V
GS
V = -4.5V
GS
0.1
0.15
0.2
0.25
0.3
0.35
0.4
0.45
0.5
0.55
0.6
0 1 2 3 4 5 6 7 8
R
,
D
R
A
I
N
-
S
O
U
R
C
E
O
N
-
R
E
S
I
S
T
A
N
C
E
(
)
DS(ON )
Ω
V , GATE-SOURCE VOLTAGE (V)
GS
Figure 4 Typical Transfer Characteristics
I = -0.88A
D
I = -0.71A
D
0.12
0.14
0.16
0.18
0.2
0.22
0.24
0.26
0.28
0.3
0.32
0.34
0
1 2 3 4 5
R
,
D
R
A
I
N
-
S
O
U
R
C
E
O
N
-
R
E
S
I
S
T
A
N
C
E
(
)
DS(ON)
Ω
I , DRAIN CURRENT (A)
D
Figure 5 Typical On-Resistance vs.
Drain Current and Temperature
V = -4.5V
GS
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
1.5
-50 -25 0 25 50 75 100 125 150
R
,
D
R
A
I
N
-
S
O
U
R
C
E
DS(ON)
O N-RESISTA NCE (NORMALIZED)
T , JUNCTION TEMPERATURE ( C)
J
°
Figure 6 On-Resistance Variation with Temperature
V = -2.5V
GS
I = -0.71A
D
V = -4.5V
GS
I = -0.88A
D
P1-P3P4-P6

DMP2200UDW-13

Mfr. #:
Buy DMP2200UDW-13
Manufacturer:
Diodes Incorporated
Description:
MOSFET Dual -20V P-Ch FET 260mOhm -4.5V -0.9A
Lifecycle:
New from this manufacturer.
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