BDW53C-S Datasheet BDW53C-S, BDW53A-S, BDW53B-S | P1-P3

BDW53, BDW53A, BDW53B, BDW53C, BDW53D

NPN SILICON POWER DARLINGTONS

1

AUGUST 1978 - REVISED SEPTEMBER 2002

Specifications are subject to change without notice.

●

Designed for Complementary Use with

BDW54, BDW54A, BDW54B, BDW54C and

BDW54D

●

40 W at 25°C Case Temperature

●

4 A Continuous Collector Current

●

Minimum h

FE

of 750 at 3 V, 1.5 A

B

C

E

TO-220 PACKAGE

(TOP VIEW)

Pin 2 is in electrical contact with the mounting base.

MDTRACA

1

2

3

absolute maximum ratings at 25°C case temperature (unless otherwise noted)

NOTES: 1. These values apply when the base-emitter diode is open circuited.

2. Derate linearly to 150°C case temperature at the rate of 0.32 W/°C.

3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.

4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, I

B(on)

= 5 mA, R

BE

= 100 Ω,

V

BE(off)

= 0, R

S

= 0.1 Ω, V

CC

= 20 V.

RATING SYMBOL VALUE UNIT

Collector-base voltage (I

E

= 0)

BDW53

BDW53A

BDW53B

BDW53C

BDW53D

V

CBO

45

60

80

100

120

V

Collector-emitter voltage (I

B

= 0) (see Note 1)

BDW53

BDW53A

BDW53B

BDW53C

BDW53D

V

CEO

45

60

80

100

120

V

Emitter-base voltage V

EBO

5V

Continuous collector current I

C

4A

Continuous base current I

B

50 mA

Continuous device dissipation at (or below) 25°C case temperature (see Note 2) P

tot

40 W

Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) P

tot

2W

Unclamped inductive load energy (see Note 4) ½LI

C

2

25 mJ

Operating junction temperature range T

j

-65 to +150 °C

Operating temperature range T

stg

-65 to +150 °C

Operating free-air temperature range T

A

-65 to +150 °C

This series is obsolete and

not recommended for new designs.

OBSOLETE

BDW53, BDW53A, BDW53B, BDW53C, BDW53D

NPN SILICON POWER DARLINGTONS

2

AUGUST 1978 - REVISED SEPTEMBER 2002

Specifications are subject to change without notice.

NOTES: 5. These parameters must be measured using pulse techniques, t

p

= 300 µs, duty cycle ≤ 2%.

6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.

†

Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.

electrical characteristics at 25°C case temperature (unless otherwise noted)

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

V

(BR)CEO

Collector-emitter

breakdown voltage

I

C

= 30 mA I

B

= 0 (see Note 5)

BDW53

BDW53A

BDW53B

BDW53C

BDW53D

45

60

80

100

120

V

I

CEO

Collector-emitter

cut-off current

V

CE

= 30 V

V

CE

= 30 V

V

CE

= 40 V

V

CE

= 50 V

V

CE

= 60 V

I

B

=0

I

B

=0

I

B

=0

I

B

=0

I

B

=0

BDW53

BDW53A

BDW53B

BDW53C

BDW53D

0.5

mA

I

CBO

Collector cut-off

current

V

CB

= 45 V

V

CB

= 60 V

V

CB

= 80 V

V

CB

= 100 V

V

CB

= 120 V

V

CB

= 45 V

V

CB

= 60 V

V

CB

= 80 V

V

CB

= 100 V

V

CB

= 120 V

I

E

=0

I

E

=0

I

E

=0

I

E

=0

I

E

=0

I

E

=0

I

E

=0

I

E

=0

I

E

=0

I

E

=0

T

C

= 150°C

T

C

= 150°C

T

C

= 150°C

T

C

= 150°C

T

C

= 150°C

BDW53

BDW53A

BDW53B

BDW53C

BDW53D

BDW53

BDW53A

BDW53B

BDW53C

BDW53D

0.2

5

mA

I

EBO

Emitter cut-off

current

V

EB

= 5 V I

C

=0 2 mA

h

FE

Forward current

transfer ratio

V

CE

= 3 V

V

CE

= 3 V

I

C

= 1.5 A

I

C

= 4 A

(see Notes 5 and 6)

750

100

20000

V

BE(on)

Base-emitter

voltage

V

CE

= 3 V I

C

= 1.5 A (see Notes 5 and 6) 2.5 V

V

CE(sat)

Collector-emitter

saturation voltage

I

B

= 30 mA

I

B

= 40 mA

I

C

= 1.5 A

I

C

= 4 A

(see Notes 5 and 6)

2.5

4

V

EC

Parallel diode

forward voltage

I

E

= 4 A I

B

= 0 3.5 V

thermal characteristics

PARAMETER MIN TYP MAX UNIT

R

θJC

Junction to case thermal resistance 3.125 °C/W

R

θJA

Junction to free air thermal resistance 62.5 °C/W

resistive-load-switching characteristics at 25°C case temperature

PARAMETER TEST CONDITIONS

†

MIN TYP MAX UNIT

t

on

Tu r n -o n t i m e I

C

= 2 A

V

BE(off)

= -5 V

I

B(on)

= 8 mA

R

L

= 15 Ω

I

B(off)

= -8 mA

t

p

= 20 µs, dc ≤ 2%

1µs

t

off

Turn-off time 4.5 µs

OBSOLETE

BDW53, BDW53A, BDW53B, BDW53C, BDW53D

NPN SILICON POWER DARLINGTONS

3

AUGUST 1978 - REVISED SEPTEMBER 2002

Specifications are subject to change without notice.

TYPICAL CHARACTERISTICS

Figure 1. Figure 2.

Figure 3.

TYPICAL DC CURRENT GAIN

vs

COLLECTOR CURRENT

I

C

- Collector Current - A

0·5 5·01·0

h

FE

- Typical DC Current Gain

20000

100

1000

10000

TCS110AD

T

C

= -40°C

T

C

= 25°C

T

C

= 100°C

V

CE

= 3 V

t

p

= 300 µs, duty cycle < 2%

COLLECTOR-EMITTER SATURATION VOLTAGE

vs

COLLECTOR CURRENT

I

C

- Collector Current - A

0·5 5·01·0

V

CE(sat)

- Collector-Emitter Saturation Voltage - V

0

0·5

1·0

1·5

2·0

TCS110AB

T

C

= -40°C

T

C

= 25°C

T

C

= 100°C

t

p

= 300 µs, duty cycle < 2%

I

B

= I

C

/ 100

BASE-EMITTER SATURATION VOLTAGE

vs

COLLECTOR CURRENT

I

C

- Collector Current - A

0·5 5·01·0

V

BE(sat)

- Base-Emitter Saturation Voltage - V

0·5

1·0

1·5

2·0

2·5

3·0

TCS110AC

T

C

= -40°C

T

C

= 25°C

T

C

= 100°C

I

B

= I

C

/ 100

t

p

= 300 µs, duty cycle < 2%

OBSOLETE

BDW53C-S

BDW53C-S

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