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MJB45H11

P1-P3P4-P6
© Semiconductor Components Industries, LLC, 2013
May, 2013 − Rev. 5
1 Publication Order Number:
MJB44H11/D
MJB44H11 (NPN),
NJVMJB44H11 (NPN),
MJB45H11 (PNP),
NJVMJB45H11 (PNP)
Complementary
Power Transistors
D
2
PAK for Surface Mount
Complementary power transistors are for general purpose power
amplification and switching such as output or driver stages in
applications such as switching regulators, converters and power
amplifiers.
Features
• Low Collector−Emitter Saturation Voltage −
V
CE(sat)
= 1.0 V (Max) @ 8.0 A
• Fast Switching Speeds
• Complementary Pairs Simplifies Designs
• Epoxy Meets UL 94 V−0 @ 0.125 in
• ESD Ratings: Human Body Model, 3B > 8000 V
Machine Model, C > 400 V
• NJV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• Pb−Free Packages are Available
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage V
CEO
80 Vdc
Emitter−Base Voltage V
EB
5 Vdc
Collector Current − Continuous
− Peak
I
C
10
20
Adc
Total Power Dissipation
@ T
C
= 25°C
Derate above 25°C
P
D
50
0.4
W
W/°C
Total Power Dissipation
@ T
A
= 25°C
Derate above 25°C
P
D
2.0
0.016
W
W/°C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
−55 to 150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Case
R
q
JC
2.5 °C/W
Thermal Resistance, Junction−to−Ambient
R
q
JA
75 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
Device Package Shipping
†
ORDERING INFORMATION
MARKING
DIAGRAM
SILICON POWER
TRANSISTORS
10 AMPERES,
80 VOLTS, 50 WATTS
x = 4 or 5
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
http://onsemi.com
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
MJB45H11T4G D
2
PAK
(Pb−Free)
800/Tape & Reel
MJB45H11G D
2
PAK
(Pb−Free)
50 Units/Rail
MJB44H11T4G D
2
PAK
(Pb−Free)
800/Tape & Reel
MJB44H11G D
2
PAK
(Pb−Free)
50 Units/Rail
D
2
PAK
CASE 418B
STYLE 1
B4xH11G
AYWW
NJVMJB44H11T4G D
2
PAK
(Pb−Free)
800/Tape & Reel
NJVMJB45H11T4G D
2
PAK
(Pb−Free)
800/Tape & Reel
MJB44H11 (NPN), NJVMJB44H11 (NPN), MJB45H11 (PNP), NJVMJB45H11 (PNP)
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
C
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (I
C
= 30 mA, I
B
= 0) V
CEO(sus)
80 − − Vdc
Collector Cutoff Current (V
CE
= Rated V
CEO
, V
BE
= 0) I
CES
− − 10
mA
Emitter Cutoff Current (V
EB
= 5 Vdc) I
EBO
− − 50
mA
ON CHARACTERISTICS
Collector−Emitter Saturation Voltage (I
C
= 8 Adc, I
B
= 0.4 Adc) V
CE(sat)
− − 1.0 Vdc
Base−Emitter Saturation Voltage (I
C
= 8 Adc, I
B
= 0.8 Adc) V
BE(sat)
− − 1.5 Vdc
DC Current Gain (V
CE
= 1 Vdc, I
C
= 2 Adc) h
FE
60 − − −
DC Current Gain (V
CE
= 1 Vdc, I
C
= 4 Adc) 40 − −
DYNAMIC CHARACTERISTICS
Collector Capacitance (V
CB
= 10 Vdc, f
test
= 1 MHz)
MJB44H11, NJVMJB44H11
MJB45H11, NJVMJB45H11
C
cb
−
−
130
230
−
−
pF
Gain Bandwidth Product (I
C
= 0.5 Adc, V
CE
= 10 Vdc, f = 20 MHz)
MJB44H11, NJVMJB44H11
MJB45H11, NJVMJB45H11
f
T
−
−
50
40
−
−
MHz
SWITCHING TIMES
Delay and Rise Times(I
C
= 5 Adc, I
B1
= 0.5 Adc)
MJB44H11, NJVMJB44H11
MJB45H11, NJVMJB45H11
t
d
+ t
r
−
−
300
135
−
−
ns
Storage Time(I
C
= 5 Adc, I
B1
= I
B2
= 0.5 Adc)
MJB44H11, NJVMJB44H11
MJB45H11, NJVMJB45H11
t
s
−
−
500
500
−
−
ns
Fall Time(I
C
= 5 Adc, I
B1
= I
B2
= 0.5 Adc)
MJB44H11, NJVMJB44H11
MJB45H11, NJVMJB45H11
t
f
−
−
140
100
−
−
ns
Figure 1. Thermal Response
t, TIME (ms)
0.01
0.01 0.05 1.0 2.0 5.0 10 20 50 500 1.0 k0.1 0.50.2
1.0
0.2
0.1
0.05
r(t), TRANSIENT THERMAL
Z
q
JC(t)
= r(t) R
q
JC
R
q
JC
= 1.56°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
- T
C
= P
(pk)
Z
q
JC(t)
P
(pk)
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
0.2
SINGLE PULSE
RESISTANCE (NORMALIZED)
0.5
D = 0.5
0.05
0.3
0.7
0.07
0.03
0.02
0.02
100 200
0.1
0.02
0.01
MJB44H11 (NPN), NJVMJB44H11 (NPN), MJB45H11 (PNP), NJVMJB45H11 (PNP)
http://onsemi.com
3
Figure 2. Maximum Rated Forward Bias
Safe Operating Area
100
1.0
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
5.0 10
T
C
≤ 70° C
DUTY CYCLE ≤ 50%
I
C
, COLLECTOR CURRENT (AMPS)
2.0 3.0 20 30 50 100
1.0
7.0 70
1.0 ms
dc
0.1
0.2
0.3
0.5
2.0
3.0
5.0
10
20
30
50
10 ms
100 ms
1.0 ms
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
C
− V
CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 2 is based on T
J(pk)
= 150°C; T
C
is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T
J(pk)
v 150°C. T
J(pk)
may be calculated from the data in
Figure 1. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
Figure 3. Power Derating
0
T, TEMPERATURE (°C)
0
40 60 100 120 160
40
T
C
20
60
P
D
, POWER DISSIPATION (WATTS)
0
2.0
T
A
1.0
3.0
80 140
T
C
T
A
20
P1-P3P4-P6

MJB45H11

Mfr. #:
Buy MJB45H11
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - BJT 8A 80V 50W PNP
Lifecycle:
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