2SD2114KT146V Datasheet 2SD2114KT146V, 2SD2114KT146W, 2SD2144STPU | P1-P3

2SD2114K / 2SD2144S

Transistors

Rev.B 1/4

High-current Gain Medium

Power Transistor (20V, 0.5A)

2SD2114K / 2SD2144S

zFeatures

1) High DC current gain.

h

FE = 1200 (Typ.)

2) High emitter-base voltage.

V

EBO =12V (Min.)

3) Low V

CE (sat).

V

CE (sat) = 0.18V (Typ.)

(I

C / IB = 500mA / 20mA)

zStructure

Epitaxial planar type

NPN silicon transistor

zExternal dimensions (Unit : mm)

2SD2144S

2SD2114K

(1) Emitter

(2) Collector

(3) Base

ROHM : SPT

EIAJ : SC-72

0∼0.1

2.8±0.2

1.6

0.3∼0.6

1.1

0.8±0.1

0.15

0.4

2.9±0.2

1.9±0.2

0.95

+0.2

−0.1

+0.2

+0.1

−0.06

+0.1

−0.05

(2)

(1)

(3)

(1) Emitter

(2) Base

(3) Collector

ROHM : SMT3

EIAJ : SC-59

Abbreviated symbol: BB

∗

All terminals have same dimensions

∗

Denotes h

FE

3±0.2(15Min.)

4±0.2 2±0.2

0.45

0.5

0.45

5

(1)

(2) (3)

−0.05

+0.15

−0.05

2.5

+0.4

−0.1

3Min.

zAbsolute maximum ratings (Ta=25°C)

Parameter

V

CBO

V

CEO

V

EBO

I

C

P

C

Tj

Tstg

25 V

V

A(DC)

W

°C

20

12

0.5

A(Pulse)1

∗

0.2

0.3

150

−55 to +150

Symbol Limits Unit

∗

Single pulse Pw=100ms

2SD2114K

2SD2144S

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Collector power

dissipation

Junction temperature

Storage temperature

2SD2114K / 2SD2144S

Transistors

Rev.B 2/4

zElectrical characteristics (Ta=25°C)

Parameter Symbol

BV

CBO

BV

CEO

BV

EBO

I

CBO

I

EBO

V

CE(sat)

f

T

∗

Cob

Min.

25

20

12

−

0.18

350

8.0

−

0.5

0.4

−

V

I

C

=10µA

I

C

=1mA

I

E

=10µA

V

CB

=20V

V

EB

=10V

I

C

/I

B

=500mA/20mA

V

CE

=10V, I

E

= −50mA, f=100MHz

V

CB

=10V, I

E

=0A, f=1MHz

V

µA

h

FE

820

−

2700

V

CE

=3V, I

C

=10mA−

V

MHz

pF

Ron

−

0.8

− I

B

=1mA, Vi=100mV(rms), f=1kHz

Ω

Typ. Max. Unit Conditions

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

Emitter cutoff current

DC current transfer ratio

Collector-emitter saturation voltage

Transition frequency

Output capacitance

Output On-resistance

∗

Measured using pulse current

zPackaging specifications and h

FE

Package

Code T146 TP

3000 5000

−

Taping

Basic ordering

unit (pieces)

VW

h

FE

VW

2SD2114K

2SD2144S

Type

h

FE values are classified as follows :

Item

h

FE

V

820 to 1800

W

1200 to 2700

zElectrical characteristic curves

0

0.4

0.8

1.2

1.6

2.0

0 0.1 0.2 0.3 0.4 0.5

Ta=25°C

0.2µA

0.4µA

0.6µA

0.8µA

1.0µA

1.2µA

1.4µA

1.6µA

I

B

=0

1.8µA

2.0µA

COLLECTOR CURRENT : I

C

(mA)

COLLECTOR TO EMITTER VOLTAGE : V

CE

(V)

Fig.1 Grounded emitter output

characteristics ( )

0

200

400

600

800

1000

0246810

Ta

=

25°C

Measured using

pulse current.

0.2mA

0.4mA

0.6mA

0.8mA

1.0mA

1.2mA

1.4mA

1.6mA

1.8mA 2.0mA

I

B

=0mA

COLLECTOR CURRENT : I

C

(mA)

COLLECTOR TO EMITTER VOLTAGE : V

CE

(V)

Fig.2 Grounded emitter output

characteristics ( )

0 0.2 0.4 0.6 0.8 1.0 1.2 1.4

1

2

5

10

20

50

100

200

500

1000

COLLECTOR CURRENT : I

C

(mA)

BASE TO EMITTER VOLTAGE : V

BE

(V)

Fig.3 Grounded emitter propagation

characteristics

V

CE

=

3V

Measured using

pulse current.

25°C

−25°C

Ta=100°C

2SD2114K / 2SD2144S

Transistors

Rev.B 3/4

1 2 5 10 20 50 100 200 5001000

10

20

50

100

200

500

1000

2000

5000

10000

Ta

=

25°C

Measured using

pulse current.

DC CURRENT GAIN : h

FE

COLLECTOR CURRENT : I

C

(mA)

Fig.4 DC current gain vs. collector

current ( )

3V

V

CE

=5V

1V

1 2 5 10 20 50 100 200 500 1000

10000

5000

2000

1000

500

200

100

50

20

10

V

CE

=

3V

Measured using

pulse current.

DC CURRENT GAIN : h

FE

COLLECTOR CURRENT : I

C

(mA)

Fig.5 DC current gain vs.

collector current ( )

25°C

−25°C

Ta=100°C

1

2

2000

1000

200

500

100

20

50

10

5

2 5 10 20 50 100 200 5001000

Ta

=

25°C

Measured using

pulse current.

10

25

50

I

C

/I

B

=100

COLLECTOR SATURATION VOLTAGE : VCE(sat)

(mV)

COLLECTOR CURRENT : I

C

(mA)

Fig.6 Collector-emitter saturation

voltage vs. collector current ( )

COLLECTOR SATURATION VOLTAGE : V

CE(sat)

(mV)

1

2

2000

1000

200

500

100

20

50

10

5

2 5 10 20 50 100 200 5001000

I

C

/I

B

=25

Measured using

pulse current.

COLLECTOR CURRENT : I

C (mA)

Fig.7 Collector-emitter saturation

voltage vs. collector current ( )

Ta=100°C

25°C

−25°C

BASE SATURATION VOLTAGE : V

BE(sat)

(mV)

COLLECTOR CURRENT : I

C

(mA)

Fig.8 Base-emitter saturation

voltage vs. collector current ( )

1 2 5 10 20 50 100 200 500 1000

10000

5000

2000

1000

500

200

100

50

20

10

Ta

=

25°C

Pulsed

I

C

/I

B

=10

25

50

100

1 2 5 10 20 50 100 200 5001000

10000

5000

2000

1000

500

200

100

50

20

10

BASE SATURATION VOLTAGE : V

BE(sat)

(mV)

COLLECTOR CURRENT : I

C

(mA)

Fig.9 Base-emitter saturation voltage

vs. collector current ( )

Measured using

pulse current.

l

C

/l

B

=10

25°C

100°C

Ta=−25°C

TRANSITION FREQUENCY : f

T

(MHz)

EMITTER CURRENT : I

E

(mA)

Fig.10 Gain bandwidth product vs.

emitter current

−1 −2 −5 −10 −20 −50

−100 −200 −500 −1000

10000

5000

2000

500

200

1000

100

20

50

10

Ta

=

25°C

V

CE

=

10V

Measured using

pulse current.

0.1 0.2 0.5 1 2 5 10 20 50 100

COLLECTOR OUTPUT CAPACITANCE : Cob

(pF)

COLLECTOR TO BASE VOLTAGE : V

CB

(V)

Fig.11 Collector output capacitance

vs. collector-base voltage

100

200

500

1000

10

20

50

2

5

1

Ta

=

25°C

f

=

1MHz

I

E

=

0A

0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10

ON RESISTANCE : Ron

(Ω)

BASE CURRENT : I

B (mA)

Fig.12 Output-on resistance vs.

base current

0.1

0.2

0.5

1

2

5

10

20

50

100

Ta=25°C

f=1kHz

Vi=100mV(

rms)

R

L

=1kΩ

2SD2114KT146V

2SD2114KT146V

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