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PACDN009MR

P1-P3P4-P6P7-P7
Semiconductor Components Industries, LLC, 2011
October, 2011 − Rev. 4
1 Publication Order Number:
PACDN009/D
PACDN009
5-Channel ESD Protection
Array
Product Description
The PACDN009 is a diode array designed to provide 5 channels of
ESD protection for electronic components or sub−systems. Each
channel consists of a pair of diodes which steers an ESD current pulse
to either the positive (V
P
) or negative (V
N
) supply. The PACDN009
protects against ESD pulses up to 15 kV Human Body Model
(100 pF capacitor discharging through a 1.5 kW resistor), and 8kV
contact discharge, per International Standard IEC 61000−4−2.
This device is particularly well−suited for portable electronics
(e.g., cellular phones, PDAs, notebook computers) because of its
small package footprint, high ESD protection level, and low loading
capacitance. It is also suitable for protecting video output lines and I/O
ports in computers and peripherals and is ideal for a wide range of
consumer electronics products.
The PACDN009 is supplied in an 8−lead MSOP package and is
available with RoHS compliant lead−free finishing.
Features
Five Channels of ESD Protection
8 kV Contact, 15 kV Air ESD Protection per Channel
(IEC 61000−4−2 Standard)
15 kV of ESD Protection per Channel (HBM)
Low Loading Capacitance (3 pF Typical)
Low Leakage Current is Ideal for Battery−Powered Devices
Available in Miniature 8−Pin MSOP Package
These Devices are Pb−Free and are RoHS Compliant
Applications
Consumer Electronic Products
Cellular Phones
PDAs
Notebook Computers
Desktop PCs
Digital Cameras and Camcorders
VGA (Video) Port Protection for Desktop and Portable PCs
MARKING DIAGRAM
Device Package Shipping
†
ORDERING INFORMATION
http://onsemi.com
PACDN009MR MSOP 8
(Pb−Free)
4000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
009R = PACDN009MR
MSOP 8
MR SUFFIX
CASE 846AB
ELECTRICAL SCHEMATIC
1 234
87 65
V
N
V
P
009R
N.C.
PACDN009
http://onsemi.com
2
TYPICAL APPLICATION CIRCUIT
0.22 mF*
Expansion
Connector
PACDN009
Handheld/PDA ESD Protection
* Capacitor should be placed as close as possible to Pin7.
4 5 6 81
37
I/O Port
Buffers
PACKAGE / PINOUT DIAGRAMS
Top View
PACDN009
8−Lead MSOP Package
V
N
1
4
V
P
CH3
8
5
CH1
009R
27
36
N.C.
CH2
CH4
CH5
Table 1. PIN DESCRIPTIONS
Pin Name Type Description
1 CH1 I/O ESD Channel
2 N.C. − No Connect
3 V
N
GND Negative Voltage Supply Rail or Ground Reference Rail
4 CH2 I/O ESD Channel
5 CH3 I/O ESD Channel
6 CH4 I/O ESD Channel
7 V
P
Supply Positive Voltage Supply Rail
8 CH5 I/O ESD Channel
PACDN009
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3
SPECIFICATIONS
Table 2. ABSOLUTE MAXIMUM RATINGS
Parameter Rating Units
Supply Voltage (V
P
− V
N
) 6.0 V
Diode Forward DC Current (Note 1) 20 mA
Operating Temperature Range −40 to +85 C
Storage Temperature Range −65 to +150 C
DC Voltage at any Channel Input (V
N
− 0.5) to (V
P
+ 0.5) V
Package Power Rating 200 mW
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Only one diode conducting at a time.
Table 3. STANDARD OPERATING CONDITIONS
Parameter Rating Units
Operating Temperature Range −40 to +85 C
Operating Supply Voltage (V
P
− V
N
) 0 to 5.5 V
Table 4. ELECTRICAL OPERATING CHARACTERISTICS (Note 1)
Symbol
Parameter Conditions Min Typ Max Units
I
P
Supply Current (V
P
− V
N
) = 5.5 V 10
mA
V
F
Diode Forward Voltage I
F
= 20 mA 0.65 0.95 V
I
LEAK
Channel Leakage Current 0.1 1.0
mA
C
IN
Channel Input Capacitance @ 1 MHz, V
P
= 5 V,
V
N
= 0 V, V
IN
= 2.5 V
(Note 2)
3 5 pF
V
ESD
ESD Protection
Peak Discharge Voltage at any
Channel Input, in System
a) Human Body Model,
MIL−STD−883, Method 3015
b) Contact Discharge per
IEC 61000−4−2
c) Air Discharge per IEC 61000−4−2
(Note 2)
(Note 3)
(Note 4)
(Note 4)
15
8
15
kV
V
CL
Channel Clamp Voltage
Positive Transients
Negative Transients
@ 15 kV ESD HBM
V
P
+ 13.0
V
N
− 13.0
V
1. All parameters specified at T
A
= 25C unless otherwise noted. V
P
= 5 V, V
N
= 0 V unless noted.
2. From I/O pins to V
P
or V
N
only. V
P
bypassed to V
N
with a 0.22 mF ceramic capacitor (see Application Information for more details).
3. Human Body Model per MIL−STD−883, Method 3015, C
Discharge
= 100 pF, R
Discharge
= 1.5 kWV
P
= 5.0 V, V
N
grounded.
4. Standard IEC 61000−4−2 with C
Discharge
= 150 pF, R
Discharge
= 330 W, V
P
= 5.0 V, V
N
grounded.
P1-P3P4-P6P7-P7

PACDN009MR

Mfr. #:
Buy PACDN009MR
Manufacturer:
ON Semiconductor
Description:
TVS Diodes / ESD Suppressors 5-ch ESD Protection
Lifecycle:
New from this manufacturer.
Delivery:
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