TSM4424
20V N-Channel MOSFET
Document Number:
DS_P0000093 1
Version: D15
Key Parameter Performance
Parameter Value Unit
V
DS
20 V
R
DS(on)
(max) 30 mΩ
Q
g
11.2 nC
Features
● Advance Trench Process Technology
● High Density Cell Design for Ultra Low On-resistance
Block Diagram
Application
● Specially Designed for Li-on Battery Packs
● Battery Switch Application
Ordering Information
Part No. Package
Packing
TSM4424CS RLG SOP-8 2.5Kpcs / 13” Reel
TSM4424CS RVG SOP-8 3Kpcs / 13” Reel
Note:
“G” denotes for Halogen- and Antimony-free as those which
contain <900ppm bromine, <900ppm chlorine (<1500ppm total
Br + Cl) and <1000ppm antimony compounds
Absolute Maximum Ratings
(T
C
= 25°C, unless otherwise noted)
Parameter Symbol Limit Unit
Drain-Source Voltage V
DS
20 V
Gate-Source Voltage V
GS
±8 V
Continuous Drain Current I
D
8 A
Pulsed Drain Current
(Note 1)
I
DM
30 A
Continuous Source Current (Diode Conduction) I
S
2.2 A
Maximum Power Dissipation
Ta = 25°C
P
D
2.5
W
Ta = 75°C 1.3
Operating Junction Temperature T
J
+150 °C
Operating Junction and Storage Temperature Range T
J
, T
STG
-55 to +150 °C
Thermal Performance
Parameter Symbol Limit Unit
Thermal Resistance Junction to Foot R
ӨJF
25 °C/W
Thermal Resistance Junction to Ambient R
ӨJA
52.5 °C/W
N-Channel MOSFET
1. Source 8. Drain
2. Source 7. Drain
3. Source 6. Drain
4. Gate 5. Drain
