DF2S6.8SC
2009-05-11
1
TOSHIBA Diodes for Protecting against ESD
DF2S6.8SC
Product for Use Only as Protection against Electrostatic
Discharge (ESD).
* This product is for protection against electrostatic discharge (ESD) only
and is not intended for any other usage, including without limitation,
the constant voltage diode application.
Absolute Maximum Ratings
(Ta = 25
°
C)
Characteristic Symbol Rating Unit
Power dissipation P* 150 mW
Junction temperature T
j
150 °C
Storage temperature range T
stg
−55 to 150 °C
*: Mounted on a glass epoxy circuit board of 20 × 20 mm,
pad dimension of 4 × 4 mm.
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
Electrical Characteristics
(Ta = 25°C)
Characteristic Symbol Test Condition Min Typ. Max Unit
Zener voltage V
Z
I
Z
= 5mA 6.4 ― 7.2 V
Dynamic impedance Z
Z
I
Z
= 5mA ― ― 10
Ω
Reverse current I
R
V
R
= 5V ― ― 0.5 μA
Total capacitance C
T
V
R
= 0 V, f = 1 MHz ― 15 ― pF
Marking Equivalent Circuit (top view)
Unit: mm
0.62±0.03
0.19±0.02
0.3±0.03
0.32±0.03
0.38
0.19±0.02
0.27±0.02
0.025±0.015
0.025±0.015
１：カソード
２：アノード
１
２
1. Cathode
2. Anode
JEDEC ―
JEITA ―
TOSHIBA 1-1R1A
Weight: 0.17mg (typ.)
SC2
