VS-MBRB25..CT-M3, VS-MBR25..CT-M3
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Vishay Semiconductors
Revision: 03-Nov-17
2
Document Number: 96406
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Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average
forward current
per leg
I
F(AV)
T
C
= 130 °C, rated V
R
15
A
per device 30
Peak repetitive forward current per leg I
FRM
Rated V
R
, square wave, 20 kHz, T
C
= 130 °C 30
Non-repetitive peak surge current I
FSM
5 μs sine or 3 μs
rect. pulse
Following any rated load
condition and with rated
V
RRM
applied
1060
Surge applied at rated load conditions halfwave,
single phase, 60 Hz
150
Non-repetitive avalanche energy per leg E
AS
T
J
= 25 °C, I
AS
= 2 A, L = 8 mH 16 mJ
Repetitive avalanche current per leg I
AR
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
2A
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop V
FM
(1)
30 A
T
J
= 25 °C 0.82
V
T
J
= 125 °C 0.73
Maximum instantaneous
reverse current
I
RM
(1)
T
J
= 25 °C
Rated DC voltage
0.2
mA
T
J
= 125 °C 40
Threshold voltage V
F(TO)
T
J
= T
J
maximum
0.355 V
Forward slope resistance r
t
12.3 m
Maximum junction capacitance C
T
V
R
= 5 V
DC
(test signal range 100 kHz to 1 MHz), 25 °C 700 pF
Typical series inductance L
S
Measured from top of terminal to mounting plane 8.0 nH
Maximum voltage rate of change dV/dt Rated V
R
10 000 V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction temperature range T
J
-65 to 150
°C
Maximum storage temperature range T
Stg
-65 to 175
Maximum thermal resistance,
junction to case per leg
R
thJC
DC operation 1.5
°C/W
Typical thermal resistance,
case to heatsink
R
thCS
Mounting surface, smooth and greased 0.50
Approximate weight
2g
0.07 oz.
Mounting torque
minimum
Non-lubricated threads
6 (5)
kgf · cm
(lbf · in)
maximum 12 (10)
Marking device
Case style D
2
PAK (TO-263AB)
MBRB2535CT
MBRB2545CT
Case style TO-262AA
MBR2535CT-1
MBR2545CT-1