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IXTP1N120P

P1-P3P4-P4
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTA1N120P
IXTP1N120P
IXYS REF: T_1N120P(2A-245)10-27-06
Fig. 7. Transconductance
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1
I
D
- Amperes
g
f s
- Siemens
T
J
= - 40ºC
25ºC
125ºC
Fig. 8. Forward Voltage Drop of
Intrinsic Diode
0.0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2
V
SD
- Volts
I
S
- Amperes
T
J
= 125ºC
T
J
= 25ºC
Fig. 9. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
024681012141618
Q
G
- NanoCoulombs
V
GS
- Volts
V
DS
= 600V
I
D
= 0.5A
I
G
= 10mA
Fig. 10. Capacitance
1
10
100
1,000
0 5 10 15 20 25 30 35 40
V
DS
- Volts
Capacitance - PicoFarads
f
= 1 MHz
C
iss
C
rss
C
oss
Fig. 11. Maximum Transient Thermal Impedance
0.0
0.1
1.0
10.0
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W
P1-P3P4-P4

IXTP1N120P

Mfr. #:
Buy IXTP1N120P
Manufacturer:
Littelfuse
Description:
MOSFET 1 Amps 1200V 20 Rds
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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