OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

IS61LV2568L-10T-TR

P1-P3P4-P6P7-P9P10-P12P13-P14
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
1
Rev. D
04/28/08
IS61LV2568L
Copyright © 2005 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
APRIL 2008
FEATURES
• High-speed access time: 8, 10 ns
• Operating Current: 50mA (typ.)
• Standby Current: 700µA (typ.)
• Multiple center power and ground pins for
greater noise immunity
• Easy memory expansion with CE and OE
options
• CE power-down
• TTL compatible inputs and outputs
• Single 3.3V power supply
• Packages available:
– 36-pin 400-mil SOJ
– 44-pin TSOP (Type II)
• Lead-free available
DESCRIPTION
The ISSI IS61LV2568L is a very high-speed, low power,
262,144-word by 8-bit CMOS static RAM. The IS61LV2568L
is fabricated using ISSI's high-performance CMOS tech-
nology. This highly reliable process coupled with innova-
tive circuit design techniques, yields higher performance
and low power consumption devices.
When CE is HIGH (deselected), the device assumes a
standby mode at which the power dissipation can be
reduced down to 36mW (max.) with CMOS input levels.
The IS61LV2568L operates from a single 3.3V power
supply and all inputs are TTL-compatible.
The IS61LV2568L is available in 36-pin 400-mil SOJ and
44-pin TSOP (Type II) packages.
FUNCTIONAL BLOCK DIAGRAM
A0-A17
CE
OE
WE
256K X 8
MEMORY ARRAY
DECODER
COLUMN I/O
CONTROL
CIRCUIT
GND
V
DD
I/O
DATA
CIRCUIT
I/O0-I/O7
256K x 8 HIGH-SPEED CMOS STATIC RAM
IS61LV2568L
2
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. D
04/28/08
PIN DESCRIPTIONS
A0-A17 Address Inputs
CE Chip Enable Input
OE Output Enable Input
WE Write Enable Input
I/O0-I/O7 Bidirectional Ports
VDD Power
GND Ground
NC No Connection
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
NC
NC
A4
A3
A2
A1
A0
CE
I/O0
I/O1
V
DD
GND
I/O2
I/O3
WE
A17
A16
A15
A14
A13
NC
NC
NC
NC
NC
A5
A6
A7
A8
OE
I/O7
I/O6
GND
V
DD
I/O5
I/O4
A9
A10
A11
A12
NC
NC
NC
NC
44
43
42
41
44-Pin TSOP (Type II)
PIN CONFIGURATION
36-Pin SOJ
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
20
19
A4
A3
A2
A1
A0
CE
I/O0
I/O1
V
DD
GND
I/O2
I/O3
WE
A17
A16
A15
A14
A13
NC
A5
A6
A7
A8
OE
I/O7
I/O6
GND
V
DD
I/O5
I/O4
A9
A10
A11
A12
NC
NC
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
3
Rev. D
04/28/08
IS61LV2568L
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol Parameter Value Unit
VDD Supply voltage with Respect to GND –0.5 to +4.0 V
VTERM Terminal Voltage with Respect to GND –0.5 to VDD + 0.5 V
TSTG Storage Temperature –65 to +150 °C
PD Power Dissipation 1.0 W
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect
reliability.
TRUTH TABLE
Mode
WEWE
WEWE
WE
CECE
CECE
CE
OEOE
OEOE
OE I/O Operation VDD Current
Not Selected X H X High-Z ISB1, ISB2
(Power-down)
Output Disabled H L H High-Z ICC
Read H L L DOUT ICC
Write L L X DIN ICC
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
Symbol Parameter Test Conditions Min. Max. Unit
VOH Output HIGH Voltage VDD = Min., IOH = –4.0 mA 2.4 — V
VOL Output LOW Voltage VDD = Min., IOL = 8.0 mA — 0.4 V
VIH Input HIGH Voltage
(1)
2.0 VDD + 0.3 V
VIL Input LOW Voltage
(1)
–0.3 0.8 V
ILI Input Leakage GND ≤ VIN
≤
VDD –1 1 µA
ILO Output Leakage GND
≤
VOUT
≤
VDD, Outputs Disabled –1 1 µA
Note:
1. VIL(min) = –0.3V (DC); VIL(min) = –2.0V (pulse width - 2.0 ns).
V
IH(max) = VDD + 0.3V (DC); VIH(max) = VDD + 2.0V (pulse width - 2.0 ns).
OPERATING RANGE
Range Ambient Temperature VDD (8ns) VDD (10 ns)
Commercial 0°C to +70°C 3.3V +10%,-5% 3.3V + 10%
Industrial –40°C to +85°C 3.3V + 10%
P1-P3P4-P6P7-P9P10-P12P13-P14

IS61LV2568L-10T-TR

Mfr. #:
Buy IS61LV2568L-10T-TR
Manufacturer:
ISSI
Description:
SRAM 2Mb 256Kx8 10ns Async SRAM 3.3v
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet