1. Product profile
1.1 General description
Silicon Monolithic Microwave Integrated Circuit (MMIC) wideband amplifier with internal
matching circuit in a 6-pin SOT363 plastic SMD package.
1.2 Features and benefits
Internally matched to 50
A gain of 24.8 dB at 950 MHz
Output power at 1 dB gain compression = 1 dBm
Supply current = 7.0 mA at a supply voltage of 5 V
Reverse isolation > 33 dB up to 2150 MHz
Good linearity with low second order and third order products
Noise figure = 3.2 dB at 950 MHz
Unconditionally stable (K > 1)
No output inductor required
1.3 Applications
LNB IF amplifiers
General purpose low noise wideband amplifier for frequencies between
DC and 2.2 GHz
2. Pinning information
BGA2851
MMIC wideband amplifier
Rev. 3 — 13 July 2015 Product data sheet
Table 1. Pinning
Pin Description Simplified outline Graphic symbol
1V
CC
2, 5 GND2
3RF_OUT
4 GND1
6RF_IN
132
4
56
sym052
1
3
2, 5
6
4
BGA2851 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet Rev. 3 — 13 July 2015 2 of 13
NXP Semiconductors
BGA2851
MMIC wideband amplifier
3. Ordering information
4. Marking
5. Limiting values
6. Thermal characteristics
7. Characteristics
Table 2. Ordering information
Type number Package
Name Description Version
BGA2851 - plastic surface-mounted package; 6 leads SOT363
Table 3. Marking
Type number Marking code Description
BGA2851 MC* * = - : made in Hong Kong
* = p : made in Hong Kong
* = W : made in China
* = t : made in Malaysia
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
CC
supply voltage RF input AC coupled 0.5 +7.0 V
I
CC
supply current - 36 mA
P
tot
total power dissipation T
sp
= 90 C-200mW
T
stg
storage temperature 40 +125 C
T
j
junction temperature - 125 C
P
drive
drive power - +10 dBm
Table 5. Thermal characteristics
Symbol Parameter Conditions Typ Unit
R
th(j-sp)
thermal resistance from junction to
solder point
P
tot
= 200 mW; T
sp
=90C 300 K/W
Table 6. Characteristics
V
CC
= 5.0 V; Z
S
= Z
L
= 50
; P
i
=
40 dBm; T
amb
= 25
C; measured on demo board; unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
V
CC
supply voltage 4.5 5.0 5.5 V
I
CC
supply current 6.1 7.0 7.8 mA
BGA2851 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet Rev. 3 — 13 July 2015 3 of 13
NXP Semiconductors
BGA2851
MMIC wideband amplifier
G
p
power gain f = 250 MHz 22.6 23.2 23.7 dB
f = 950 MHz 24.1 24.8 25.5 dB
f = 2150 MHz 23.1 24.6 26 dB
RL
in
input return loss f = 250 MHz 13 15 17 dB
f = 950 MHz 222427dB
f = 2150 MHz 11 14 20 dB
RL
out
output return loss f = 250 MHz 15 19 24 dB
f = 950 MHz 121314dB
f = 2150 MHz 11 14 17 dB
ISL isolation f = 250 MHz 40 61 81 dB
f = 950 MHz 444547dB
f = 2150 MHz 35 37 40 dB
NF noise figure f = 250 MHz 3.5 4.0 4.5 dB
f = 950 MHz 2.8 3.2 3.6 dB
f = 2150 MHz 2.6 3.0 3.5 dB
B
3dB
3 dB bandwidth 3 dB below gain at 1 GHz 2.7 2.9 3.1 GHz
K Rollett stability factor f = 250 MHz 19 29 39
f = 950 MHz 3 3 4
f = 2150 MHz 1 1.9 2.9
P
L(sat)
saturated output power f = 250 MHz 2 10 dBm
f = 950 MHz 3 10 dBm
f = 2150 MHz 4 3 2dBm
P
L(1dB)
output power at 1 dB gain compression f = 250 MHz 4 3 3dBm
f = 950 MHz 4.5 3.5 1.5 dBm
f = 2150 MHz 5.5 4.5 3.5 dBm
IP3
I
input third-order intercept point P
drive
= 43 dBm (for each tone)
f
1
= 250 MHz; f
2
= 251 MHz 17 15 13 dBm
f
1
= 950 MHz; f
2
= 951 MHz 19 17 15 dBm
f
1
=2150MHz; f
2
=2151MHz 23 20 17 dBm
IP3
O
output third-order intercept point P
drive
= 43 dBm (for each tone)
f
1
= 250 MHz; f
2
= 251 MHz 6 8 10 dBm
f
1
= 950 MHz; f
2
= 951 MHz 6 8 10 dBm
f
1
=2150MHz; f
2
= 2151 MHz 2.5 5.5 8.5 dBm
P
L(2H)
second harmonic output power P
drive
= 40 dBm
f
1H
= 250 MHz; f
2H
=500MHz 65 63 61 dBm
f
1H
= 950 MHz; f
2H
=1900MHz 51 50 48 dBm
IM2 second-order intermodulation distance P
drive
= 43 dBm (for each tone)
f
1
= 250 MHz; f
2
=251MHz 414242dBc
f
1
= 950 MHz; f
2
=951MHz 424243dBc
Table 6. Characteristics
…continued
V
CC
= 5.0 V; Z
S
= Z
L
= 50
; P
i
=
40 dBm; T
amb
= 25
C; measured on demo board; unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit

BGA2851,115

Mfr. #:
Manufacturer:
NXP Semiconductors
Description:
RF Amplifier GP AMPLIFIER
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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