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VEMI35AA-HAF-G-08

P1-P3P4-P6
VEMI35AA-HAF
www.vishay.com
Vishay Semiconductors
Rev. 1.0, 03-Aug-12
1
Document Number: 83314
For technical questions, contact: EMIFilter@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
3-Channel EMI-Filter with ESD-Protection
MARKING (example only)
Dot = pin 1 marking
YY = type code (see table below)
XX = date code
FEATURES
• Ultra compact LLP75-7L package
• 3-channel EMI-filter and ESD-protection
• Low leakage current
• Line resistance R
S
= 100
• Typical cut off frequency f
3dB
= 100 MHz
• ESD-protection acc. IEC 61000-4-2
± 30 kV contact discharge
± 30 kV air discharge
• e4 - precious metal (e.g. Ag, Au, NiPd, NiPdAu) (no Sn)
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
20517
1
19423
7
1
23
65
4
21001
XX
YY
ORDERING INFORMATION
DEVICE NAME ORDERING CODE
TAPED UNITS PER REEL
(8 mm TAPE ON 7" REEL)
MINIMUM ORDER QUANTITY
VEMI35AA-HAF VEMI35AA-HAF-G-08 3000 15 000
PACKAGE DATA
DEVICE NAME
PACKAGE
NAME
TYPE
CODE
WEIGHT
MOLDING COMPOUND
FLAMMABILITY RATING
MOISTURE
SENSITIVITY LEVEL
SOLDERING
CONDITIONS
VEMI35AA-HAF LLP75-7L 9F 4.2 mg UL 94 V-0
MSL level 1
(according J-STD-020)
260 °C/10 s at terminals
ABSOLUTE MAXIMUM RATINGS
PARAMETER TEST CONDITIONS SYMBOL VALUE UNIT
Peak pulse current
All I/O pin to pin 7; acc. IEC 61000-4-5;
t
p
= 8/20 μs; single shot
I
PPM
4A
ESD immunity
Contact discharge acc. IEC 61000-4-2; 10 pulses
V
ESD
± 30
kV
Air discharge acc. IEC 61000-4-2; 10 pulses ± 30
Operating temperature Junction temperature T
J
- 40 to + 125 °C
Storage temperature T
STG
- 55 to + 150 °C
VEMI35AA-HAF
www.vishay.com
Vishay Semiconductors
Rev. 1.0, 03-Aug-12
2
Document Number: 83314
For technical questions, contact: EMIFilter@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
APPLICATION NOTE
With the VEMI35AA-HAF 3 different signal or data lines can be filtered and clamped to ground. Due to the different clamping
levels in forward and reverse direction the clamping behavior is Bidirectional and Asymmetric (BiAs).
The 3 independent EMI-filter are placed between
pin 1 and pin 6
pin 2 and pin 5, and
pin 3 and pin 4.
They all are connected to a common ground pin 7 on the backside of the package. Each filter is symmetrical so that all ports
(pin 1 to 6) can be used as input or output.
The circuit diagram of one EMI-filter-channel shows two identical Z-diodes at the input to ground and the output to ground.
These Z-diodes are characterized by the breakthrough voltage level (V
BR
) and the diode capacitance (C
D
). Below the
breakthrough voltage level the Z-diodes can be considered as capacitors. Together with these capacitors and the line
resistance R
S
between input and output the device works as a low pass filter. Low frequency signals (f < f
3dB
) pass the filter
while high frequency signals (f > f
3dB
) will be shorted to ground through the diode capacitances C
D
.
Each filter is symmetrical so that both ports can be used as input or output.
19420
19421
19424
L1
IN
L2
IN
L3
IN
L1
OUT
L2
OUT
L3
OUT
7
1
2
3
6
5
4
21060
R
S
Out
(pin 4, 5, 6)
In
(pin 1, 2, 3)
GND
(pin 7)
C
D
C
D
VEMI35AA-HAF
www.vishay.com
Vishay Semiconductors
Rev. 1.0, 03-Aug-12
3
Document Number: 83314
For technical questions, contact: EMIFilter@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
Fig. 1 - ESD Discharge Current Wave Form
acc. IEC 61000-4-2 (330 /150 pF)
Fig. 2 - 8/20 μs Peak Pulse Current Wave Form
acc. IEC 61000-4-5
ELECTRICAL CHARACTERISTICS All inputs (pin 1, 2, and 3) to ground (pin 7)
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT
Protection paths Number of channels which can be protected N
channel
- - 3 channel
Reverse stand off voltage Max. reverse working voltage V
RWM
--5V
Reverse voltage at I
R
= 1 μA V
R
5--V
Reverse current at V
R
= 5 V I
R
--1μA
Reverse break down voltage I
R
= 1 mA V
BR
6--V
Pos. clamping voltage
at I
PP
= 1 A applied at the input, measured
at the output; acc. IEC 61000-4-5
V
C-out
--7.8V
at I
PP
= I
PPM
= 4 A applied at the input,
measured at the output; acc. IEC 61000-4-5
V
C-out
--8V
Neg. clamping voltage
at I
PP
= - 1 A applied at the input, measured
at the output; acc. IEC 61000-4-5
V
C-out
- 1 - - V
at I
PP
= I
PPM
= - 4 A applied at the input,
measured at the output; acc. IEC 61000-4-5
V
C-out
- 1.2 - - V
Input capacitance
at V
R
= 0 V; f = 1 MHz C
IN
-60-pF
at V
R
= 2.5 V; f = 1 MHz C
IN
-37-pF
ESD-clamping voltage at ± 30 kV ESD-pulse acc. IEC 61000-4-2 V
CESD
-7.5- V
Line resistance
Measured between input and output;
I
S
= 10 mA
R
S
90 100 110
Cut-off frequency V
IN
= 0 V; measured in a 50 system f
3dB
- 100 - MHz
0 %
20 %
40 %
60 %
80 %
100 %
120 %
- 10 0 10 20 30 40 50 60 70 80 90 100
Time (ns)
Discharge Current I
ESD
Rise time = 0.7 ns to 1 ns
53 %
27 %
20557
0 %
20 %
40 %
60 %
80 %
100 %
010203040
Time (µs)
I
PPM
20 µs to 50 %
8 µs to 100 %
20548
P1-P3P4-P6

VEMI35AA-HAF-G-08

Mfr. #:
Buy VEMI35AA-HAF-G-08
Manufacturer:
Vishay Semiconductors
Description:
EMI Filter Circuits ESD PROTECTION DIODE LLP75-e4-G
Lifecycle:
New from this manufacturer.
Delivery:
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