MMA036AA

MMA036AA
SMD-00152 RevD
Subject to Change Without Notice
1 of 6
Features
Integrated PLFX technology:
Allows use of less-expensive coil
Very low power dissipation:
4.5V, 85mA (383mW)
High drain efficiency (38dBm/W)
Great 0.04-50GHz performance:
10.5 ± 1.25dB gain
14.5dBm Psat, 11dBm P1dB
5dB noise figure
>30dB dynamic gain control
Integrated temperature-referenced
power detector output
100% DC, RF, and visually tested
Size: 1640x920um (64.6x36.2mil)
ECCN 3A001.b.2.d
Description
The MMA036AA is a seven stage
traveling wave amplifier. The amplifier
features Microsemi PLFX (Passive Low
Frequency eXtension) circuitry designed
to reduce the integration cost of the amplifier.
PLFX isolates the amplifier from bias
inductor resonances, allowing use
of a less-expensive coil.
Application
The MMA036AA Broadband MMIC Low-Noise
Amplifier with PLFX is designed for high
efficiency and low-noise broadband
applications in RF and microwave
communications, test equipment and
military systems. By using specific external
components, the bandwidth of operation
can be extended below 40MHz.
Key Characteristics: Vdd=4.5V, Idd=85mA, Zo=5
Specifications pertain to wafer measurements with RF probes and DC bias cards @ 25°C
1.5 - 40GHz
0.04 - 50GHz
0.04 - 65GHz
Parameter
Min
Typ
Max
Min
Typ
Max
Min
Typ
Max
S21 (dB)
9.5
11
-
9.5
10.5
-
8
10
-
Flatness (±dB)
-
0.5
1.25
-
1.25
1.75
-
1.5
2.0
S11 (dB)
-
-15
-12
-
-15
-12
-
-11
-9
S22 (dB)
-
-15
-12
-
-12
-10
-
-12
-9
S12 (dB)
-
-20
-17
-
-18
-15
-
-16
-13
P1dB (dBm)
11.5
13
-
9.5
11
-
-
-
-
Psat (dBm)
14
15.5
-
-
14.5
-
-
-
-
NF (dB)
-
4.5
-
-
5
-
-
-
-
RF
det
(mV/mW)
-
0.5
-
-
0.5
-
-
-
-
DC to 65GHz Broadband MMIC
Low-Noise Amplifier with PLFX
MMA036AA
SMD-00152 RevD
Subject to Change Without Notice
2 of 6
Typical Performance
S21 Noise Frequency
Typical IC performance measured on-wafer Typical IC performance with package de-embedded
S11, S22
S12
Typical IC performance measured on-wafer Typical IC performance measured on-wafer
Output Power
Group Delay
Typical IC performance measured on-wafer Typical IC performance measured on-wafer
MMA036AA
SMD-00152 RevD
Subject to Change Without Notice
3 of 6
Table 1: Supplemental Specifications
Parameter
Description
Min
Typ
Max
Vdd
Drain Bias Voltage
3V
4.5V
7.5V
Idd
Drain Bias Current
-
85mA
120mA
Vg1
1st Gate Bias Voltage
-4V
-
+0.5V
Vg2
2nd Gate Bias Voltage
Vdd - Vg2 < 7V
N/C
+4V
P
in
Input Power (CW)
-
-
20dBm
P
dc
Power Dissipation
-
0.383W
-
T
ch
Channel Temperature
-
-
150˚C
Θ
ch
Thermal Resistance (T
case
=8C)
-
22˚ C/W
-
Caution, ESD
Sensitive Device

MMA036AA

Mfr. #:
Manufacturer:
Microchip / Microsemi
Description:
RF Amplifier DC-65GHz MMIC Low-Noise Amp PLFX
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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