IRF7471PBF Datasheet IRF7471PBF, IRF7471TRPBF | P1-P3

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8/11/04

IRF7471PbF

SMPS MOSFET

HEXFET

®

Power MOSFET

V

DSS

R

DS(on)

max I

D

40V 13mΩ 10A

Symbol Parameter Typ. Max. Units

R

θJL

Junction-to-Drain Lead ––– 20

R

θJA

Junction-to-Ambient  ––– 50 °C/W

Thermal Resistance

Notes  through  are on page 8

SO-8

Top View

8

1

2

3

4

5

6

7

D

DG

S

A

S

A

Applications

Benefits

l Ultra-Low Gate Impedance

l Very Low R

DS(on)

l Fully Characterized Avalanche Voltage

and Current

l High Frequency Isolated DC-DC

Converters with Synchronous Rectification

for Telecom and Industrial Use

l High Frequency Buck Converters for

Computer Processor Power

l Lead-Free

Absolute Maximum Ratings

Symbol Parameter Max. Units

V

DS

Drain-Source Voltage 40 V

V

GS

Gate-to-Source Voltage ± 20 V

I

D

@ T

A

= 25°C Continuous Drain Current, V

GS

@ 10V 10

I

D

@ T

A

= 70°C Continuous Drain Current, V

GS

@ 10V 8.3 A

I

DM

Pulsed Drain Current 83

P

D

@T

A

= 25°C Maximum Power Dissipation 2.5 W

P

D

@T

A

= 70°C Maximum Power Dissipation 1.6 W

Linear Derating Factor 0.02 mW/°C

T

J

, T

STG

Junction and Storage Temperature Range -55 to + 150 °C

PD- 95726

IRF7471PbF

2 www.irf.com

Symbol Parameter Min. Typ. Max. Units Conditions

I

S

Continuous Source Current MOSFET symbol

(Body Diode)

––– –––

showing the

I

SM

Pulsed Source Current integral reverse

(Body Diode) 

––– –––

p-n junction diode.

––– 0.80 1.3 V T

J

= 25°C, I

S

= 8.0A, V

GS

= 0V 

––– 0.65 ––– T

J

= 125°C, I

S

= 8.0A, V

GS

= 0V

t

rr

Reverse Recovery Time ––– 69 100 ns T

J

= 25°C, I

F

= 8.0A, V

R

= 20V

Q

rr

Reverse Recovery Charge ––– 130 200 nC di/dt = 100A/µs



t

rr

Reverse Recovery Time ––– 73 110 ns T

J

= 125°C, I

F

= 8.0A, V

R

=20V

Q

rr

Reverse Recovery Charge ––– 160 240 nC di/dt = 100A/µs



Parameter Min. Typ. Max. Units Conditions

V

(BR)DSS

Drain-to-Source Breakdown Voltage 40 ––– ––– V V

GS

= 0V, I

D

= 250µA

∆V

(BR)DSS

/∆T

J

Breakdown Voltage Temp. Coefficient

––– 0.043 ––– V/°C Reference to 25°C, I

D

= 1mA

––– 9.5 13 V

GS

= 10V, I

D

= 10A 

––– 12 16 V

GS

= 4.5V, I

D

= 8.0A 

V

GS(th)

Gate Threshold Voltage 1.0 ––– 3.0 V V

DS

= V

GS

, I

D

= 250µA

––– ––– 20

µA

V

DS

= 32V, V

GS

= 0V

––– ––– 100 V

DS

= 32V, V

GS

= 0V, T

J

= 125°C

Gate-to-Source Forward Leakage ––– ––– 200 V

GS

= 16V

Gate-to-Source Reverse Leakage ––– ––– -200

nA

V

GS

= -16V

Static @ T

J

= 25°C (unless otherwise specified)

I

GSS

I

DSS

Drain-to-Source Leakage Current

R

DS(on)

Static Drain-to-Source On-Resistance

mΩ

S

D

G

Diode Characteristics

2.3

83

A

V

SD

Diode Forward Voltage

Dynamic @ T

J

= 25°C (unless otherwise specified)

ns

Symbol Parameter Typ. Max. Units

E

AS

Single Pulse Avalanche Energy ––– 300 mJ

I

AR

Avalanche Current ––– 8.0 A

Avalanche Characteristics

Symbol Parameter Min. Typ. Max. Units Conditions

g

fs

Forward Transconductance 22 ––– ––– S V

DS

= 20V, I

D

= 8.0A

Q

g

Total Gate Charge ––– 21 32 I

D

= 8.0A

Q

gs

Gate-to-Source Charge ––– 7.2 11 nC V

DS

= 20V

Q

gd

Gate-to-Drain ("Miller") Charge ––– 8.2 12 V

GS

= 4.5V 

Q

oss

Output Gate Charge ––– 23 35 V

GS

= 0V, V

DS

= 16V

t

d(on)

Turn-On Delay Time ––– 12 ––– V

DD

= 20V

t

r

Rise Time ––– 2.7 ––– I

D

= 8.0A

t

d(off)

Turn-Off Delay Time ––– 15 ––– R

G

= 1.8Ω

t

f

Fall Time ––– 4.1 ––– V

GS

= 4.5V 

C

iss

Input Capacitance ––– 2820 ––– V

GS

= 0V

C

oss

Output Capacitance ––– 700 ––– V

DS

= 20V

C

rss

Reverse Transfer Capacitance ––– 46 ––– pF ƒ = 1.0MHz

IRF7471PbF

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Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

Fig 4. Normalized On-Resistance

Vs. Temperature

-60 -40 -20 0 20 40 60 80 100 120 140 160

0.0

0.5

1.0

1.5

2.0

2.5

T , Junction Temperature( C)

R , Drain-to-Source On Resistance

(Normalized)

J

DS(on)

°

V =

I =

GS

D

10V

10A

1

10

100

2.0 2.5 3.0 3.5 4.0 4.

5

V = 25V

20µs PULSE WIDTH

DS

V , Gate-to-Source Voltage (V)

I , Drain-to-Source Current (A)

GS

D

T = 25 C

J

°

T = 150 C

J

°

0.1

1

10

100

1000

0.1 1 10 10

0

20µs PULSE WIDTH

T = 25 C

J

°

TOP

BOTTOM

VGS

10V

5.0V

4.5V

4.0V

3.5V

3.3V

3.0V

2.7V

V , Drain-to-Source Voltage (V)

I , Drain-to-Source Current (A)

DS

D

2.7V

1

10

100

1000

0.1 1 10 10

0

20µs PULSE WIDTH

T = 150 C

J

°

TOP

BOTTOM

VGS

10V

5.0V

4.5V

4.0V

3.5V

3.3V

3.0V

2.7V

V , Drain-to-Source Voltage (V)

I , Drain-to-Source Current (A)

DS

D

2.7V

IRF7471PBF

IRF7471PBF

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