TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/394
T4-LDS-0014 Rev. 4 (082192) Page 1 of 2
DEVICES LEVELS
2N4150 2N5237 2N5238
JAN
2N4150S 2N5237S 2N5238S
JANTX
JANTXV
JANS
ABSOLUTE MAXIMUM RATINGS (T
C
= +25°C unless otherwise noted)
Parameters / Test Conditions Symbol
2N4150
2N4150S
2N5237
2N5237S
2N5238
2N5238S
Unit
Collector-Emitter Voltage V
CEO
70 120 170 Vdc
Collector-Base Voltage V
CBO
100 150 200 Vdc
Emitter-Base Voltage V
EBO
10 Vdc
Collector Current I
C
10 Adc
Total Power Dissipation
@ T
A
= +25°C
(1)
@ T
C
= +25°C
(2)
P
T
1.0
15
W
Operating & Storage Junction Temperature Range T
j
, T
stg
-65 to +200 °C
Thermal Resistance, Junction-to Case
Junction- to Ambient
R
θJC
R
θJA
10
175
°C/W
1) Derate linearly @ 5.7mW/°C for T
A
> +25°C
2) Derate linearly @ 100mW/°C for T
C
> +25°C
ELECTRICAL CHARACTERISTICS (T
A
= +25°C, unless otherwise noted)
Parameters / Test Conditions Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I
C
= 0.1mAdc 2N4150, 2N4150S
2N5237, 2N5237S
2N5238, 2N5238S
V
(BR)CEO
70
120
170
Vdc
Collector-Emitter Cutoff Current
V
BE
= 0.5Vdc, V
CE
= 60Vdc
V
BE
= 0.5Vdc, V
CE
= 110Vdc
V
BE
= 0.5Vdc, V
CE
= 160Vdc
2N4150, 2N4150S
2N5237, 2N5237S
2N5238, 2N5238S
I
CEX
10
10
10
µAdc
Collector-Emitter Cutoff Current
V
CE
= 60Vdc
V
CE
= 110Vdc
V
CE
= 160Vdc
2N4150, 2N4150S
2N5237, 2N5237S
2N5238, 2N5238S
I
CEO
10
10
10
µAdc
Emitter-Base Cutoff Current
V
EB
= 7.0Vdc
V
EB
= 5.0Vdc
I
EBO
10
0.1
µAdc
TO-5
2N4150, 2N5237, 2N5238
TO-39
(TO-205AD)
2N4150S, 2N5237S, 2N5238S
