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SI3437DV-T1-E3

P1-P3P4-P6P7-P9P10-P11
www.vishay.com
4
Document Number: 73899
S09-0766-Rev. B, 04-May-09
Vishay Siliconix
Si3437DV
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Source-Drain Diode Forward Voltage
Threshold Voltage
1
0.1
0.01
V
SD
- Source-to-Drain Voltage (V)
-)
A(
t
ner
r
u
C
e
cru
o
S I
S
10
1.5 1.2 0.9 0.6 0.3
0.0
T = 25 °C
T = 150 °C
J
J
T
J
- Temperature (°C)
- 0.4
- 0.2
0.0
0.2
0.4
0.6
0.8
- 50 - 25 0 25 50 75 100 125 150
I
D
= 250 µA
) V ( e c n a i r a - V
V
I
D
= 5 mA
GS(th)
On-Resistance vs. Gate-to-Source Temperature
Single Pulse Power, Junction-to-Ambient
(Ω) Drain-to-Source -R
GS
- Gate-to-Source Voltage (V)
0
1
2
3
4
5
02468 10
I
D
= 1.2 A
125 °C
25 °C
V
DS(on)
0
12
24
36
48
60
Time (s)
)W( re
w
oP
0.001 0.01
0.1 1
10
Safe Operating Area, Junction-to-Ambient
* V
GS
minimum V
GS
at which R
DS(on)
is specified
1
0.1
0.001
0.1
)
A(
tn
e
r
r
uC
niarD
-I
D
0.01
V
DS
- Drain-to-Source Voltage (V)
10
1
10
100
1000
T
A
= 25 °C
Single Pulse
10 s
DC
10 ms
100 ms
1 ms
Limited by R
DS(on)*
1 s
Vishay Siliconix
Si3437DV
Document Number: 73899
S09-0766-Rev. B, 04-May-09
www.vishay.com
5
MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Current Derating*
0.0
0.3
0.6
1.0
1.3
1.6
0 25 50 75 100 125 150
T
C
- Case Temperature (°C)
)
W
(
r
e
w
o
P
Power, Junction-to-Foot
0.0
0.8
1.6
2.4
3.2
4.0
0 25 50 75 100 125 150
T
C
- Case Temperature (°C)
)
W
(
r
e
w
o
P
Power Derating, Junction-to-Ambient
0.0
0.3
0.6
0.9
1.2
1.5
0 25 50 75 100 125 150
T
A
- Ambient Temperature (°C)
r (W)
e
wo
P
www.vishay.com
6
Document Number: 73899
S09-0766-Rev. B, 04-May-09
Vishay Siliconix
Si3437DV
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?73899
.
Normalized Thermal Transient Impedance, Junction-to-Ambient
10
-3
10
-2
10
-1
100
Square Wave Pulse Duration (s)
10
1000
1
0.1
0.01
t n e i s n a r T e v i t c e f f E d e z i l a m r o N
e c n a d e p m I l a m r e h T
1
10
-4
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 75 °C
3. T
JM
– T = P
DM
Z
thJA
(t)
t
1
t
2
4. Surface Mounted
Notes:
t
1
P
DM
t
2
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Foot
10
-3
10
-2
1 10 10
-1
10
1
0.1
0.01
Square Wave Pulse Duration (s)
t n e i s n a r
T
e v
i
t
c e f
f E
d
e
z i
l
a m
r
o N
e c n a d e p m I
l
a m r e h T
-4
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
P1-P3P4-P6P7-P9P10-P11

SI3437DV-T1-E3

Mfr. #:
Buy SI3437DV-T1-E3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET -150V Vds 20V Vgs TSOP-6
Lifecycle:
New from this manufacturer.
Delivery:
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