VS-32CTQ...S-M3, VS-32CTQ...-1-M3 Series
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Vishay Semiconductors
Revision: 15-Aug-15
2
Document Number: 94936
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Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current
See fig. 5
I
F(AV)
50 % duty cycle at T
C
= 115 °C, rectangular waveform 30
A
Maximum peak one cycle non-repetitive
surge current
See fig. 7
I
FSM
5 μs sine or 3 μs rect. pulse
Following any rated load
condition and with rated
V
RRM
applied
900
10 ms sine or 6 ms rect. pulse 250
Non-repetitive avalanche energy E
AS
T
J
= 25 °C, I
AS
= 1.20 A, L = 11.10 mH 13 mJ
Repetitive avalanche current I
AR
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
3A
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop
See fig. 1
V
FM
(1)
15 A
T
J
= 25 °C
0.49
V
30 A 0.58
15 A
T
J
= 125 °C
0.40
30 A 0.53
Maximum reverse leakage current
See fig. 2
I
RM
(1)
T
J
= 25 °C
V
R
= Rated V
R
1.75
mA
T
J
= 125 °C 97
Threshold voltage V
F(TO)
T
J
= T
J
maximum
0.233 V
Forward slope resistance r
t
9.09 m
Maximum junction capacitance per leg C
T
V
R
= 5 V
DC
(test signal range 100 kHz to 1 MHz), 25 °C 1300 pF
Typical series inductance per leg L
S
Measured lead to lead 5 mm from package body 8.0 nH
Maximum voltage rate of change dV/dt Rated V
R
10 000 V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range
T
J
, T
Stg
-55 to +150 °C
Maximum thermal resistance,
junction to case per leg
R
thJC
DC operation
See fig. 4
3.25
°C/W
Typical thermal resistance,
case to heatsink
R
thCS
Mounting surface, smooth and greased 0.50
Approximate weight
2g
0.07 oz.
Mounting torque
minimum 6 (5)
kgf cm
(lbf in)
maximum 12 (10)
Marking device
Case style TO-263AB (D
2
PAK)
32CTQ025S
32CTQ030S
Case style TO-262AA
32CTQ025-1
32CTQ030-1