OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

VS-32CTQ030-1-M3

P1-P3P4-P6P7-P8
VS-32CTQ...S-M3, VS-32CTQ...-1-M3 Series
www.vishay.com
Vishay Semiconductors
Revision: 15-Aug-15
1
Document Number: 94936
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High Performance Schottky Rectifier, 2 x 15 A
FEATURES
• 150 °C T
J
operation
• Low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
• Guard ring for enhanced ruggedness and long
term reliability
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• Designed and qualified according to JEDEC
®
-JESD 47
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
The VS-32CTQ... Schottky rectifier series has been
optimized for low reverse leakage at high temperature. The
proprietary barrier technology allows for reliable operation
up to 150 °C junction temperature. Typical applications are
in switching power supplies, converters, freewheeling
diodes, and reverse battery protection.
PRODUCT SUMMARY
I
F(AV)
2 x 15 A
V
R
25 V, 30 V
V
F
at I
F
0.40 V
I
RM
max. 97 mA at 125°C
T
J
max. 150 °C
E
AS
13 mJ
Package TO-263AB (D
2
PAK), TO-262AA
Diode variation Common cathode
D
2
PAK TO-262
VS-32CTQ...S-M3 VS-32CTQ...-1-M3
Base
common
cathode
A
node Anode
Common
cathode
1
3
2
2
Base
common
cathode
Anode Anode
Common
cathode
1
3
2
2
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
Rectangular waveform 30 A
V
RRM
25, 30 V
I
FSM
t
p
= 5 μs sine 900 A
V
F
15 A
pk
, T
J
= 125 °C 0.40 V
T
J
Range -55 to +150 °C
VOLTAGE RATINGS
PARAMETER SYMBOL
VS-32CTQ025S-M3
VS-32CTQ025-1-M3
VS-32CTQ030S-M3
VS-32CTQ030-1-M3
UNITS
Maximum DC reverse voltage V
R
25 30 V
Maximum working peak reverse voltage V
RWM
VS-32CTQ...S-M3, VS-32CTQ...-1-M3 Series
www.vishay.com
Vishay Semiconductors
Revision: 15-Aug-15
2
Document Number: 94936
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current
See fig. 5
I
F(AV)
50 % duty cycle at T
C
= 115 °C, rectangular waveform 30
A
Maximum peak one cycle non-repetitive
surge current
See fig. 7
I
FSM
5 μs sine or 3 μs rect. pulse
Following any rated load
condition and with rated
V
RRM
applied
900
10 ms sine or 6 ms rect. pulse 250
Non-repetitive avalanche energy E
AS
T
J
= 25 °C, I
AS
= 1.20 A, L = 11.10 mH 13 mJ
Repetitive avalanche current I
AR
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
3A
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop
See fig. 1
V
FM
(1)
15 A
T
J
= 25 °C
0.49
V
30 A 0.58
15 A
T
J
= 125 °C
0.40
30 A 0.53
Maximum reverse leakage current
See fig. 2
I
RM
(1)
T
J
= 25 °C
V
R
= Rated V
R
1.75
mA
T
J
= 125 °C 97
Threshold voltage V
F(TO)
T
J
= T
J
maximum
0.233 V
Forward slope resistance r
t
9.09 m
Maximum junction capacitance per leg C
T
V
R
= 5 V
DC
(test signal range 100 kHz to 1 MHz), 25 °C 1300 pF
Typical series inductance per leg L
S
Measured lead to lead 5 mm from package body 8.0 nH
Maximum voltage rate of change dV/dt Rated V
R
10 000 V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range
T
J
, T
Stg
-55 to +150 °C
Maximum thermal resistance,
junction to case per leg
R
thJC
DC operation
See fig. 4
3.25
°C/W
Typical thermal resistance,
case to heatsink
R
thCS
Mounting surface, smooth and greased 0.50
Approximate weight
2g
0.07 oz.
Mounting torque
minimum 6 (5)
kgf cm
(lbf in)
maximum 12 (10)
Marking device
Case style TO-263AB (D
2
PAK)
32CTQ025S
32CTQ030S
Case style TO-262AA
32CTQ025-1
32CTQ030-1
VS-32CTQ...S-M3, VS-32CTQ...-1-M3 Series
www.vishay.com
Vishay Semiconductors
Revision: 15-Aug-15
3
Document Number: 94936
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
1
100
10
1000
I
F
- Instantaneous Forward Current (A)
V
FM
- Forward Voltage Drop (V)
1.4
1.8
1.6
0.20 0.4 0.6 0.8 1.0 1.2
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
0.001
1
10
100
0.1
0.01
1000
I
R
- Reverse Current (mA)
V
R
- Reverse Voltage (V)
1051520
30
25
0
T
J
= 150 °C
T
J
= 125 °C
T
J
= 100 °C
T
J
= 75 °C
T
J
= 50 °C
T
J
= 25 °C
100
1000
10 000
C
T
- Junction Capacitance (pF)
V
R
- Reverse Voltage (V)
105 152025
35
30
0
T
J
= 25 °C
0.001
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1
t
1
- Rectangular Pulse Duration (s)
Z
thJC
- Thermal Impedance (°C/W)
10
Single pulse
(thermal resistance)
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1
/t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
P1-P3P4-P6P7-P8

VS-32CTQ030-1-M3

Mfr. #:
Buy VS-32CTQ030-1-M3
Manufacturer:
Vishay Semiconductors
Description:
Schottky Diodes & Rectifiers Schottky - TO-262-e3
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet