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RMPA2265

P1-P3P4-P6P7-P9
©2005 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
April 2005
RMPA2265 Rev. I
RMPA2265 Dual Band WCDMA Power Edge™ Power Amplifier Module 1850 to 1910 MHz and 1920 to 1980 MHz
RMPA2265
Dual Band WCDMA Power Edge™ Power Amplifier
Module 1850 to 1910 MHz and 1920 to 1980 MHz
Features
■
Single positive-supply operation and low power and shut-
down modes
■
42% WCDMA efficiency at +28 dBm average output power
1920–1980 MHz
■
39% WCDMA efficiency at 27.5 dBm average output power
1850–1910 MHz
■
Meets UMTS/WCDMA performance requirements in both
UMTS bands
■
Meets HSDPA performance requirements
■
Compact Lead-free compliant LCC package–
(3.0 x 3.0 x 1.0 mm nominal)
■
Internally matched to 50 Ohms and DC blocked RF
input/output
General Description
The RMPA2265 power amplifier module (PAM) is designed for
WCDMA/HSDPA applications in both the 1850–1910 and 1920–
1980 MHz bands. The 2 stage PAM is internally matched to 50
Ohms to minimize the use of external components and features
a low-power mode to reduce standby current and DC power
consumption during peak phone usage. High power-added effi-
ciency and excellent linearity are achieved using Fairchild’s
InGaP/GaAs Heterojunction Bipolar Transistor (HBT) process.
Device
Functional Block Diagram
(paddle ground on package bottom)
4
3
2
18
7
6
5
DC Bias Control
Input
Match
Output
Match
Vcc2
RF OUT
GND
Vref
RF IN
Vcc1
MMIC
(Top View)
Vmode
GND
2
www.fairchildsemi.com
RMPA2265 Rev. I
RMPA2265 Dual Band WCDMA Power Edge™ Power Amplifier Module 1850 to 1910 MHz and 1920 to 1980 MHz
Absolute Ratings
1
Note:
1. No permanent damage with only one parameter set at extreme limit. Other parameters set to typical values.
Electrical Characteristics (1920 to 1980 MHz)
1
Notes:
1. All parameters met at T
C
= +25°C, V
CC
= +3.4V, V
ref
= 2.85V and load VSWR
≤
1.2:1, unless otherwise
noted.
2. All phase angles.
3. Guaranteed by design.
Symbol Parameter Ratings Units
V
CC1
, V
CC2
Supply Voltages 5.0 V
V
ref
Reference Voltage 2.6 to 3.5 V
V
mode
Power Control Voltage 3.5 V
P
IN
RF Input Power +10 dBm
T
STG
Storage Temperature -55 to +150 °C
Symbol Parameter Min Typ Max Units Comments
fOperating Frequency 1920 1980 MHz
WCDMA Operation
Gp Power Gain 26 28 dB Po = +28dBm, Vmode = 0V
26 dB Po = +16dBm, Vmode
≥
2.0V
Po Linear Output Power 28 dBm Vmode = 0V
16 dBm Vmode
≥
2.0V
PAEd PAEd (digital) @ +28dBm 42 % Vmode = 0V
PAEd (digital) @ +16dBm 9 % Vmode
≥
2.0V
PAEd (digital) @ +16dBm 25 % Vmode
≥
2.0V, Vcc = 1.4V
Itot High Power Total Current 440 mA Po = +28dBm, Vmode = 0V
Low Power Total Current 120 mA Po = +16dBm, Vmode
≥
2.0V
Adjacent Channel Leakage
Ratio
WCDMA Modulation 3GPP
3.2 03-00 DPCCH+1 DCDCH
ACLR1 ±5.00MHz Offset
1920–1980MHz
-40 dBc Po = +28dBm, Vmode = 0V
-42 dBc Po = +16dBm, Vmode
≥
2.0V
ACLR2 ±10.00MHz Offset
1920–1980MHz
-54 dBc Po = +28dBm, Vmode = 0V
-66 dBc Po = +16dBm, Vmode
≥
2.0V
General Characteristics
VSWR Input Impedance 2.0:1
NF Noise Figure 4 dB
Rx No Receive Band Noise Power -142 dBm/
Hz
Po
≤
+28dBm, 2110 to 2170MHz
2fo – 5fo Harmonic Suppression
3
-50 dBc Po
≤
+28dBm
SSpurious Outputs
2, 3
-60 dBc Load VSWR
≤
5.0:1
Ruggedness with Load
Mismatch
3
10:1 No permanent damage
Tc Case Operating Temperature -30 85 °C
DC Characteristics
Iccq Quiescent Current 45 mA Vmode
≥
2.0V
Iref Reference Current 5 mA Po
≤
+28dBm
Icc(off) Shutdown Leakage Current 1 5 µA No applied RF signal
3
www.fairchildsemi.com
RMPA2265 Rev. I
RMPA2265 Dual Band WCDMA Power Edge™ Power Amplifier Module 1850 to 1910 MHz and 1920 to 1980 MHz
Electrical Characteristics (1850 to 1910 MHz)
1
Notes:
1. All parameters met at T
C
= +25°C, V
CC
= +3.4V, V
ref
= 2.85V and load VSWR
≤
1.2:1, unless otherwise noted.
2. All phase angles
3. Guaranteed by design
Recommended Operating Conditions
Symbol Parameter Min Typ Max Units Comments
fOperating Frequency 1850 1910 MHz
WCDMA Operation
Gp Power Gain 26 28 dB Po = +27.5dBm, Vmode = 0V
26 dB Po = +16dBm, Vmode
≥
2.0V
Po Linear Output Power 27.5 dBm Vmode = 0V
16 dBm Vmode
≥
2.0V
PAEd PAEd (digital) @ +27.5dBm 39 % Vmode = 0V
PAEd (digital) @ +16dBm 9 % Vmode
≥
2.0V
PAEd (digital) @ +16dBm 25 % Vmode
≥
2.0V, Vcc = 1.4V
Itot High Power Total Current 420 mA Po = +27.5dBm, Vmode = 0V
Low Power Total Current 120 mA Po = +16dBm, Vmode
≥
2.0V
Adjacent Channel Leakage Ratio
WCDMA Modulation 3GPP
3.2 03-00 DPCCH+1 DCDCH
ACLR1 ±5.00MHz Offset
1850–1910MHz
-40 dBc Po = +27.5dBm, Vmode = 0V
-42 dBc Po = +16dBm, Vmode
≥
2.0V
ACLR2 ±10.00MHz Offset
1850–1910MHz
-54 dBc Po = +27.5dBm, Vmode = 0V
-66 dBc Po = +16dBm, Vmode
≥
2.0V
General Characteristics
VSWR Input Impedance 2.0:1
NF Noise Figure 4 dB
Rx No Receive Band Noise Power -139 dBm/Hz Po
≤
+27.5dBm, 1930 to 1990MHz
2fo – 5fo Harmonic Suppression
3
-50 dBc Po
≤
+27.5dBm
SSpurious Outputs
2, 3
-60 dBc Load VSWR
≤
5.0:1
Ruggedness with Load Mismatch
3
10:1 No permanent damage
Tc Case Operating Temperature -30 85 °C
DC Characteristics
Iccq Quiescent Current 45 mA Vmode
≥
2.0V
Iref Reference Current 5 mA Po
≤
+27.5dBm
Icc(off) Shutdown Leakage Current 1 5 µA No applied RF signal
Symbol Parameter Min Typ Max Units
fOperating Frequency 1850 1980 MHz
V
CC1
, V
CC2
Supply Voltage 3.0 3.4 4.2 V
V
ref
Reference Voltage
Operating
Shutdown
2.7
0
2.85 3.1
0.5
V
V
V
mode
Bias Control Voltage
Low-Power
High-Power
1.8
0
2.0 3.0
0.5
V
V
P
OUT
Linear Output Power (low-power)
1920–1980 MHz (high power)
1850–1910 MHz (high power)
+16
+28
+27.5
dBm
dBm
dBm
T
C
Case Operating Temperature -30 +85 °C
P1-P3P4-P6P7-P9

RMPA2265

Mfr. #:
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Manufacturer:
ON Semiconductor
Description:
IC AMP W-CDMA 1.92-1.98GHZ 8LCC
Lifecycle:
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