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IXYH25N250CHV

P1-P3P4-P6
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYT25N250CHV
IXYH25N250CHV
Fig. 12. Maximum Transient Thermal Impedance
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- K / W
Fig. 11. Forward-Bias Safe Operating Area
0.01
0.1
1
10
100
1000
1 10 100 1000 10000
V
DS
- Volts
I
D
- Amperes
T
J
= 175ºC
T
C
= 25ºC
Single Pulse
1ms
10ms
V
CE(sat)
Limi
t
DC
100µs
25µs
100ms
Fig. 7. Transconductance
0
4
8
12
16
20
24
28
32
36
40
44
0 102030405060708090
I
C
- Amperes
g
f s
-
Siemens
T
J
= - 40ºC
25ºC
150ºC
Fig. 10. Reverse-Bias Safe Operating Area
0
20
40
60
80
100
120
100 400 700 1000 1300 1600 1900 2200 2500
V
CE
- Volts
I
C
- Amperes
T
J
= 150ºC
R
G
= 5
Ω
dv / dt < 10V / ns
Fig. 8. Gate Charge
0
2
4
6
8
10
12
14
16
0 20 40 60 80 100 120 140
Q
G
- NanoCoulombs
V
GE
- Volts
V
CE
= 1250V
I
C
= 25A
I
G
= 10mA
Fig. 9. Capacitance
10
100
1,000
10,000
0 5 10 15 20 25 30 35 40
V
CE
- Volts
Capacitance - PicoFarad
s
f
= 1 MHz
C
ies
C
oes
C
res
© 2016 IXYS CORPORATION, All Rights Reserved
IXYT25N250CHV
IXYH25N250CHV
Fig. 13. Inductive Switching Energy Loss vs.
Gate Resistance
2
6
10
14
18
22
26
5 10152025303540455055
R
G
- Ohms
E
off
- MilliJoules
8
12
16
20
24
28
32
E
on
- MilliJoules
E
off
E
on
T
J
= 150ºC , V
GE
= 15V
V
CE
= 1250V
I
C
= 25A
I
C
= 50A
Fig. 16. Inductive Turn-off Switching Times vs.
Gate Resistance
100
150
200
250
300
350
400
450
500
5 10152025303540455055
R
G
- Ohms
t
f i
- Nanoseconds
0
150
300
450
600
750
900
1050
1200
t
d(off)
- Nanoseconds
t
f i
t
d(off)
T
J
= 150ºC, V
GE
= 15V
V
CE
= 1250V
I
C
= 50AI
C
= 25A
Fig. 14. Inductive Switching Energy Loss vs.
Collector Current
0
4
8
12
16
20
24
10 15 20 25 30 35 40 45 50
I
C
- Amperes
E
off
- MilliJoules
0
4
8
12
16
20
24
E
on
- MilliJoules
E
off
E
on
R
G
= 5
Ω
V
GE
= 15V
V
CE
= 1250V
T
J
= 150ºC
T
J
= 25ºC
Fig. 15. Inductive Switching Energy Loss vs.
Junction Temperature
2
6
10
14
18
22
26
25 50 75 100 125 150
T
J
- Degrees Centigrade
E
off
- MilliJoules
4
8
12
16
20
24
28
E
on
- MilliJoules
E
off
E
on
R
G
= 5
Ω
V
GE
= 15V
V
CE
= 1250V
I
C
= 25A
I
C
= 50A
Fig. 17. Inductive Turn-off Switching Times vs.
Collector Current
0
100
200
300
400
500
600
10 15 20 25 30 35 40 45 50
I
C
- Amperes
t
f i
- Nanoseconds
0
100
200
300
400
500
600
t
d(off)
- Nanoseconds
t
f i
t
d(off)
R
G
= 5
Ω
, V
GE
= 15V
V
CE
= 1250V
T
J
= 150ºC
T
J
= 25ºC
Fig. 18. Inductive Turn-off Switching Times vs.
Junction Temperature
60
140
220
300
380
460
25 50 75 100 125 150
T
J
- Degrees Centigrade
t
f i
- Nanoseconds
100
150
200
250
300
350
t
d(off)
- Nanoseconds
t
f i
t
d(off)
R
G
= 5
Ω
, V
GE
= 15V
V
CE
= 1250V
I
C
= 50A
I
C
= 25A
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYT25N250CHV
IXYH25N250CHV
Fig. 20. Inductive Turn-on Switching Times vs.
Collector Current
0
10
20
30
40
50
60
70
80
90
10 15 20 25 30 35 40 45 50
I
C
- Amperes
t
r i
- Nanoseconds
10
12
14
16
18
20
22
24
26
28
t
d(on)
- Nanoseconds
t
r i
t
d(on)
R
G
= 5
Ω
, V
GE
= 15V
V
CE
= 1250V
T
J
= 150ºC
T
J
= 25ºC
Fig. 21. Inductive Turn-on Switching Times vs.
Junction Temperature
0
20
40
60
80
100
120
25 50 75 100 125 150
T
J
- Degrees Centigrade
t
r i
- Nanoseconds
12
14
16
18
20
22
24
t
d(on)
- Nanoseconds
t
r i
t
d(on)
R
G
= 5
Ω
, V
GE
= 15V
V
CE
= 1250V
I
C
= 50A
I
C
= 25A
Fig. 19. Inductive Turn-on Switching Times vs.
Gate Resistance
0
20
40
60
80
100
120
140
5 10152025303540455055
R
G
- Ohms
t
r i
- Nanoseconds
0
10
20
30
40
50
60
70
t
d(on)
- Nanoseconds
t
r i
t
d(on)
T
J
= 150ºC, V
GE
= 15V
V
CE
= 1250V
I
C
= 25A
I
C
= 50A
IXYS REF: IXY_25N250CV1HV(7T-AT628) 6-24-16
P1-P3P4-P6

IXYH25N250CHV

Mfr. #:
Buy IXYH25N250CHV
Manufacturer:
Littelfuse
Description:
IGBT Transistors 2500V/95A , HV XPT IGBT
Lifecycle:
New from this manufacturer.
Delivery:
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Payment:
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