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MBR10H100HE3/45

P1-P3P4-P5
MBR10Hxx, MBRF10Hxx, MBRB10Hxx
www.vishay.com
Vishay General Semiconductor
Revision: 28-Jul-15
1
Document Number: 88667
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High Voltage Schottky Rectifier
High Barrier Technology for Improved High Temperature Performance
FEATURES
• Power pack
• Guardring for overvoltage protection
• Low power loss, high efficiency
• Low forward voltage drop
• Low leakage current
• High forward surge capability
• High frequency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of
245 °C (for TO-263AB package)
• Solder bath temperature 275 °C maximum, 10 s, per
JESD 22-B106 (for TO-220AC and ITO-220AC package)
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHE3
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching mode
power supplies, freewheeling diodes, DC/DC converters, or
polarity protection application.
MECHANICAL DATA
Case: TO-220AC, ITO-220AC, TO-263AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
PRIMARY CHARACTERISTICS
I
F(AV)
10 A
V
RRM
90 V to 100 V
I
FSM
250 A
V
F
0.64 V
I
R
4.5 μA
T
J
max. 175 °C
Package TO-220AC, ITO-220AC, TO-263AB
Diode variations Single
PIN 2
PIN 1
TO-263AB
CASE
PIN 2
PIN 1
TO-220AC
MBR10H90
MBR10H100
ITO-220AC
MBRF10H90
MBRF10H100
MBRB10H90
MBRB10H100
PIN 1 K
PIN 2 HEATSINK
1
2
1
2
K
1
2
MAXIMUM RATINGS (T
C
= 25 °C unless otherwise noted)
PARAMETER SYMBOL MBR10H90 MBR10H100 UNIT
Maximum repetitive peak reverse voltage V
RRM
90 100
VWorking peak reverse voltage V
RWM
90 100
Maximum DC blocking voltage V
DC
90 100
Maximum average forward rectified current I
F(AV)
10
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
I
FSM
250
Peak repetitive reverse current at t
p
= 2.0 µs, 1 kHz I
RRM
0.5
Voltage rate of change (rated V
R
) dV/dt 10 000 V/μs
Operating junction and storage temperature range T
J
, T
STG
-65 to +175 °C
Isolation voltage (ITO-220AC only) from terminal to heatsink t = 1 min V
AC
1500 V
MBR10Hxx, MBRF10Hxx, MBRB10Hxx
www.vishay.com
Vishay General Semiconductor
Revision: 28-Jul-15
2
Document Number: 88667
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width 40 ms
Note
(1)
AEC-Q101 qualified
ELECTRICAL CHARACTERISTICS (T
C
= 25 °C unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS VALUE UNIT
Maximum instantaneous forward voltage V
F
(1)
I
F
= 10 A T
C
= 25 °C 0.77
V
I
F
= 10 A T
C
= 125 °C 0.64
I
F
= 20 A T
C
= 25 °C 0.88
I
F
= 20 A T
C
= 125 °C 0.73
Maximum reverse current I
R
(2)
Rated V
R
T
J
= 25 °C 4.5 μA
T
J
= 125 °C 6.0 mA
THERMAL CHARACTERISTICS (T
C
= 25 °C unless otherwise noted)
PARAMETER SYMBOL MBR MBRF MBRB UNIT
Typical thermal resistance R
JC
2.7 5.8 2.7 °C/W
ORDERING INFORMATION (Example)
PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE
TO-220AC MBR10H100-E3/45 1.80 45 50/tube Tube
ITO-220AC MBRF10H100-E3/45 1.94 45 50/tube Tube
TO-263AB MBRB10H100-E3/45 1.33 45 50/tube Tube
TO-263AB MBRB10H100-E3/81 1.33 81 800/reel Tape and reel
TO-220AC MBR10H100HE3/45
(1)
1.80 45 50/tube Tube
ITO-220AC MBRF10H100HE3/45
(1)
1.94 45 50/tube Tube
TO-263AB MBRB10H100HE3/45
(1)
1.33 45 50/tube Tube
TO-263AB MBRB10H100HE3/81
(1)
1.33 81 800/reel Tape and reel
MBR10Hxx, MBRF10Hxx, MBRB10Hxx
www.vishay.com
Vishay General Semiconductor
Revision: 28-Jul-15
3
Document Number: 88667
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
RATINGS AND CHARACTERISTICS CURVES (T
C
= 25 °C unless otherwise noted)
Fig. 1 - Forward Current Derating Curve
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 4 - Typical Reverse Characteristics
Fig. 5 - Typical Junction Capacitance
Fig. 6 - Typical Transient Thermal Impedance
0
4
8
12
20
0
50
100
150
16
180
MBRF
Resistive or Inductive Load
Average Forward Current (A)
Case Temperature (°C)
MBR, MBRB
0
50
150
100
250
200
300
1
100
10
T
J
= T
J
Max.
8.3 ms Single Half Sine-Wave
Number of Cycles at 60 Hz
Peak Forward Surge Current (A)
0.1 0.2 0.6 0.7 0.8 0.90.3
100
10
0.1
0.01
1.0
0.4 0.5
1.0
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
T
J
= 100 °C
T
J
= 150 °C
T
J
= 125 °C
T
J
= 175 °C
T
J
= 25 °C
1
1000
0.01
0.1
10 000
100
10
20 10040 60 80
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Current (µA)
T
J
= 100 °C
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
0.1
101
100
1000
10 000
10
100
Reverse Voltage (V)
Junction Capacitance (pF)
0.01
0.1 1
10
10
100
0.1
1
t - Pulse Duration (s)
Transient Thermal Impedance (°C/W)
P1-P3P4-P5

MBR10H100HE3/45

Mfr. #:
Buy MBR10H100HE3/45
Manufacturer:
Vishay
Description:
Schottky Diodes & Rectifiers 100 Volt 10A Single 250 Amp IFSM
Lifecycle:
New from this manufacturer.
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