FPNH10
NPN RF Transistor
This device is designed for use in low noise UHF/VHF amplifiers,
with collector currents in the 100 µA to 20 mA range in common
emitter or common base mode of operations, and in low frequency
drift, high output UHF oscillators. Sourced from Process 42.
FPNH10
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value Units
V
CEO
Collector-Emitter Voltage 25 V
V
CBO
Collector-Base Voltage 30 V
V
EBO
Emitter-Base Voltage 3.0 V
I
C
Collector Current - Continuous 50 mA
T
J
, T
stg
Operating and Storage Junction Temperature Range -55 to +150
°
C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
C
E
B
TO-92
Symbol Characteristic Max Units
FPNH10
P
D
Total Device Dissipation
Derate above 25
°
C
350
2.8
mW
mW/
°
C
R
θ
JC
Thermal Resistance, Junction to Case 125
°
C/W
R
θ
JA
Thermal Resistance, Junction to Ambient 357
°
C/W
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
©2000 Fairchild Semiconductor Corporation FPNH10 Rev. A
