BYQ28X-200_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 5 February 2009 3 of 10
NXP Semiconductors
BYQ28X-200
Dual ultrafast rugged rectifier diode
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
RRM
repetitive peak reverse
voltage
-200V
V
RWM
crest working reverse
voltage
-200V
V
R
reverse voltage DC - 200 V
I
O(AV)
average output current SQW; δ = 0.5; T
h
≤ 92 °C; both diodes conducting;
see Figure 1
; see Figure 2
-10A
I
FRM
repetitive peak forward
current
SQW; δ = 0.5; t
p
= 25 µs; T
h
≤ 92 °C; per diode - 10 A
I
FSM
non-repetitive peak
forward current
t
p
= 10 ms; SIN; T
j(init)
= 25 °C; per diode - 50 A
t
p
= 8.3 ms; SIN; T
j(init)
= 25 °C; per diode - 55 A
I
RRM
repetitive peak reverse
current
t
p
=2µs; δ = 0.001 - 0.2 A
I
RSM
non-repetitive peak
reverse current
t
p
= 100 µs - 0.2 A
T
stg
storage temperature -40 150 °C
T
j
junction temperature - 150 °C
Electrostatic discharge
V
ESD
electrostatic discharge
voltage
HBM; C = 250 pF; R = 1.5 kΩ; all pins - 8 kV
Fig 1. Forward power dissipation as a function of
average forward current; square waveform;
maximum values
Fig 2. Forward power dissipation as a function of
average forward current; sinusoidal waveform;
maximum values
I
F(AV)
(A)
08624
001aag976
4
2
6
8
P
tot
(W)
0
δ = 1
0.2
0.1
0.5
001aag977
I
F(AV)
(A)
0642
2
4
6
P
tot
(W)
0
a = 1.57
2.2
2.8
4.0
1.9
