April 2011 Doc ID 12089 Rev 2 1/18
18
PD55003L-E
RF power transistor, LdmoST plastic family
N-channel enhancement-mode, lateral MOSFETs
Features
Excellent thermal stability
Common source configuration
P
OUT
=3 W mith 17dB gain@500 MHz/12.5 V
New leadless plastic package
ESD protection
Supplied in tape and reel of 3 K units
In compliance with 2002/95/EC european
directive
Description
The PD55003L-E is a common source N-channel,
enhancement-mode lateral field-effect RF power
transistor. It is designed for high gain, broadband
commercial and industrial application. It operates
at 12 V in common source mode at frequencies of
up to 1 GHz. PD55003L-E boasts the excellent
gain, linearity and reliability of STH1LV latest LD-
MOS technology mounted in the innovative
leadless SMD plastic package, PowerFLAT™.
PD55003L-E’s superior linearity performances
makes it an ideal solution for car mobile radio.
Figure 1. Pin configuration
PowerFLAT™(5x5)
TOP VIEW
Table 1. Device summary
Order code Marking Package Packaging
PD55003L-E 55003 PowerFLAT™(5x5) Tape and reel
www.st.com
Contents PD55003L-E
2/18 Doc ID 12089 Rev 2
Contents
Contents. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical specification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
3 Impedance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3.1 Typical performances . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3.2 Typical performance (broadband) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
PD55003L-E Maximum ratings
Doc ID 12089 Rev 2 3/18
1 Maximum ratings
(T
CASE
=25°C)
Table 2. Absolute maximum ratings (T
CASE
=25°C)
Symbol Parameter Value Unit
V
(BR)DSS
Drain-source voltage 40 V
V
GS
Gate-source volatge -0.5 to+15 V
I
D
Drain current 2.5 A
P
DISS
Power dissipation (@T
C
= 70°C) 14 W
T
stg
Storage temperature – 65 to +150 °C
T
j
Operating junction temperature 150 °C
Table 3. Thermal data
Symbol Parameter Value Unit
R
th(j-c)
Junction-case thermal resistance 5.7 °C/W

PD55003L-E

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
RF MOSFET Transistors RF POWER transistor LDMOST family N-Chan
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet