April 2011 Doc ID 12089 Rev 2 1/18
18
PD55003L-E
RF power transistor, LdmoST plastic family
N-channel enhancement-mode, lateral MOSFETs
Features
■ Excellent thermal stability
■ Common source configuration
■ P
OUT
=3 W mith 17dB gain@500 MHz/12.5 V
■ New leadless plastic package
■ ESD protection
■ Supplied in tape and reel of 3 K units
■ In compliance with 2002/95/EC european
directive
Description
The PD55003L-E is a common source N-channel,
enhancement-mode lateral field-effect RF power
transistor. It is designed for high gain, broadband
commercial and industrial application. It operates
at 12 V in common source mode at frequencies of
up to 1 GHz. PD55003L-E boasts the excellent
gain, linearity and reliability of STH1LV latest LD-
MOS technology mounted in the innovative
leadless SMD plastic package, PowerFLAT™.
PD55003L-E’s superior linearity performances
makes it an ideal solution for car mobile radio.
Figure 1. Pin configuration
PowerFLAT™(5x5)
TOP VIEW
Table 1. Device summary
Order code Marking Package Packaging
PD55003L-E 55003 PowerFLAT™(5x5) Tape and reel
www.st.com