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APTGT150DA60T1G

P1-P3P4-P6
APTGT150DA60T1G
APTGT150DA60T1G – Rev 1 October, 2012
www.microsemi.com
1
–
6
3
4
Q2
CR2
21
9
NTC
12
CR1
65
11
10
Pins 1/2 ; 3/4 ; 5/6 must be shorted together
Absolute maximum ratings
Specification of IGBT device but output current must be limited to 75A to not exceed a delta of temperature greater
than 30°C for the connectors.
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
Symbol Parameter Max ratings Unit
V
CES
Collector - Emitter Breakdown Voltage 600 V
T
C
= 25°C
225 *
I
C
Continuous Collector Current
T
C
= 80°C
150 *
I
CM
Pulsed Collector Current T
C
= 25°C 350
A
V
GE
Gate – Emitter Voltage ±20 V
P
D
Maximum Power Dissipation
T
C
= 25°C
480 W
RBSOA Reverse Bias Safe Operating Area T
j
= 150°C 300A @ 550V
Application
AC and DC motor control
Switched Mode Power Supplies
Power Factor Correction
Features
Trench + Field Stop IGBT3
Technology
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- RBSOA and SCSOA rated
Very low stray inductance
Internal thermistor for temperature monitoring
High level of integration
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Low profile
RoHS Compliant
Boost chopper
Trench + Field Stop IGBT3
Power Module
V
CES
= 600V
I
C
= 150A* @ Tc = 80°C
APTGT150DA60T1G
APTGT150DA60T1G – Rev 1 October, 2012
www.microsemi.com
2
–
6
All ratings @ T
j
= 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
I
CES
Zero Gate Voltage Collector Current V
GE
= 0V, V
CE
= 600V 250 µA
T
j
= 25°C
1.5 1.9
V
CE(sat)
Collector Emitter Saturation Voltage
V
GE
=15V
I
C
= 150A
T
j
= 150°C
1.7
V
V
GE(th)
Gate Threshold Voltage V
GE
= V
CE
, I
C
= 1.5 mA 5.0 5.8 6.5 V
I
GES
Gate – Emitter Leakage Current V
GE
= 20V, V
CE
= 0V 400 nA
Dynamic Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
C
ies
Input Capacitance 9200
C
oes
Output Capacitance 580
C
res
Reverse Transfer Capacitance
V
GE
= 0V
V
CE
= 25V
f = 1MHz
270
pF
T
d(on)
Turn-on Delay Time 115
T
r
Rise Time 45
T
d(off)
Turn-off Delay Time 225
T
f
Fall Time
Inductive Switching (25°C)
V
GE
= ±15V
V
Bus
= 300V
I
C
= 150A
R
G
= 3.3
55
ns
T
d(on)
Turn-on Delay Time 130
T
r
Rise Time 50
T
d(off)
Turn-off Delay Time 300
T
f
Fall Time
Inductive Switching (150°C)
V
GE
= ±15V
V
Bus
= 300V
I
C
= 150A
R
G
= 3.3
70
ns
T
j
= 25°C 0.85
E
on
Turn on Energy
T
j
= 150°C 1.5
mJ
T
j
= 25°C 4.1
E
off
Turn off Energy
V
GE
= ±15V
V
Bus
= 300V
I
C
= 150A
R
G
= 3.3
T
j
= 150°C 5.3
mJ
Chopper diode ratings and characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
V
RRM
Maximum Peak Repetitive Reverse Voltage
600 V
T
j
= 25°C 250
I
RM
Maximum Reverse Leakage Current V
R
=600V
T
j
= 150°C 500
µA
I
F
DC Forward Current
Tc = 80°C 150 A
T
j
= 25°C 1.6 2
V
F
Diode Forward Voltage
I
F
= 150A
V
GE
= 0V
T
j
= 150°C 1.5
V
T
j
= 25°C 130
t
rr
Reverse Recovery Time
T
j
= 150°C 225
ns
T
j
= 25°C 6.9
Q
rr
Reverse Recovery Charge
T
j
= 150°C 14.5
µC
T
j
= 25°C 1.6
E
r
Reverse Recovery Energy
I
F
= 150A
V
R
= 300V
di/dt =3000A/µs
T
j
= 150°C 3.5
mJ
APTGT150DA60T1G
APTGT150DA60T1G – Rev 1 October, 2012
www.microsemi.com
3
–
6
Thermal and package characteristics
Symbol Characteristic Min Typ Max Unit
IGBT
0.31
R
thJC
Junction to Case Thermal Resistance
Diode
0.52
°C/W
V
ISOL
RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz
4000 V
T
J
Operating junction temperature range -40 175
T
STG
Storage Temperature Range -40 125
T
C
Operating Case Temperature -40 100
°C
Torque Mounting torque To heatsink M4 2 3 N.m
Wt Package Weight 80 g
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol Characteristic Min Typ Max Unit
R
25
Resistance @ 25°C 50
k
B
25/85
T
25
= 298.15 K 3952
K
TT
B
R
R
T
11
exp
25
85/25
25
SP1 Package outline (dimensions in mm)
See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com
T: Thermistor temperature
R
T
: Thermistor value at T
P1-P3P4-P6

APTGT150DA60T1G

Mfr. #:
Buy APTGT150DA60T1G
Manufacturer:
Microchip / Microsemi
Description:
IGBT Modules CC8065
Lifecycle:
New from this manufacturer.
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