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SM5S30ATHE3/I

P1-P3P4-P5
SM5S10AT thru SM5S43AT
www.vishay.com
Vishay General Semiconductor
Revision: 03-Jul-15
1
Document Number: 87609
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Surface Mount PAR
®
Transient Voltage Suppressors
High Temperature Stability and High Reliability Conditions
FEATURES
• Junction passivation optimized design passivated
anisotropic rectifier technology
•T
J
= 175 °C capability suitable for high reliability
and automotive requirement
• Available in uni-directional polarity only
• Low leakage current
• Low forward voltage drop
• High surge capability
• Meets ISO7637-2 surge specification (varied by test
condition)
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 245 °C
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHE3
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting,
especially for automotive load dump protection application.
MECHANICAL DATA
Case: DO-218AC
Molding compound meets UL 94 V-0 flammability rating
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
HE3 suffix meets JESD 201 class 2 whisker test
Polarity: Heatsink is anode
Note
(1)
Non-repetitive current pulse at T
A
= 25 °C
PRIMARY CHARACTERISTICS
V
WM
10 V to 43 V
V
BR
11.1 V to 52.8 V
P
PPM
(10 x 1000 μs) 3600 W
P
PPM
(10 x 10 000 μs) 2800 W
P
D
5 W
I
FSM
500 A
T
J
max. 175 °C
Polarity Uni-directional
Package DO-218AC
DO-218 Compatible
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL VALUE UNIT
Peak pulse power dissipation
with 10/1000 μs waveform
P
PPM
3600
W
with 10/10 000 μs waveform 2800
Power dissipation on infinite heatsink at T
C
= 25 °C (fig. 1) P
D
5.0 W
Peak pulse current with 10/1000 μs waveform I
PPM
(1)
See next table A
Peak forward surge current 8.3 ms single half sine-wave I
FSM
500 A
Operating junction and storage temperature range T
J
, T
STG
-55 to +175 °C
SM5S10AT thru SM5S43AT
www.vishay.com
Vishay General Semiconductor
Revision: 03-Jul-15
2
Document Number: 87609
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
• For all types maximum V
F
= 2.0 V at I
F
= 100 A measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses
per minute maximum
Note
(1)
AEC-Q101 qualified
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
DEVICE
TYPE
BREAKDOWN
VOLTAGE
V
BR
(V)
TEST
CURRENT
I
T
(mA)
STAND-OFF
VOLTAGE
V
WM
(V)
MAXIMUM
REVERSE
LEAKAGE
AT V
WM
I
D
(μA)
MAXIMUM REVERSE
LEAKAGE
AT V
WM
T
J
= 175 °C
I
D
(μA)
MAX. PEAK
PULSE CURRENT
AT 10/1000 μs
WAVEFORM
(A)
MAXIMUM
CLAMPING
VOLTAGE
AT I
PPM
V
C
(V)
MIN. MAX.
SM5S10AT 11.1 12.3 5.0 10.0 15 250 212 17.0
SM5S11AT 12.2 13.5 5.0 11.0 10 150 198 18.2
SM5S12AT 13.3 14.7 5.0 12.0 10 150 181 19.9
SM5S13AT 14.4 15.9 5.0 13.0 10 150 167 21.5
SM5S14AT 15.6 17.2 5.0 14.0 10 150 155 23.2
SM5S15AT 16.7 18.5 5.0 15.0 10 150 148 24.4
SM5S16AT 17.8 19.7 5.0 16.0 10 150 138 26.0
SM5S17AT 18.9 20.9 5.0 17.0 10 150 130 27.6
SM5S18AT 20.0 22.1 5.0 18.0 10 150 123 29.2
SM5S20AT 22.2 24.5 5.0 20.0 10 150 111 32.4
SM5S22AT 24.4 26.9 5.0 22.0 10 150 101 35.5
SM5S24AT 26.7 29.5 5.0 24.0 10 150 93 38.9
SM5S26AT 28.9 31.9 5.0 26.0 10 150 86 42.1
SM5S28AT 31.1 34.4 5.0 28.0 10 150 79 45.4
SM5S30AT 33.3 36.8 5.0 30.0 10 150 74 48.4
SM5S33AT 36.7 40.6 5.0 33.0 10 150 68 53.3
SM5S36AT 40.0 44.2 5.0 36.0 10 150 62 58.1
SM5S40AT 44.4 49.1 5.0 40.0 10 150 56 64.5
SM5S43AT 47.8 52.8 5.0 43.0 10 150 52 69.4
THERMAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL VALUE UNIT
Typical thermal resistance, junction to case R
θJC
1.0 °C/W
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
SM5S10ATHE3/I
(1)
2.505 I 750
13" diameter plastic tape and reel,
anode towards the sprocket hole
SM5S10AT thru SM5S43AT
www.vishay.com
Vishay General Semiconductor
Revision: 03-Jul-15
3
Document Number: 87609
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
RATINGS AND CHARACTERISTICS CURVES (T
A
= 25 °C unless otherwise noted)
Fig. 1 - Power Derating Curve
Fig. 2 - Load Dump Power Characteristics
(10 ms Exponential Waveform)
Fig. 3 - Pulse Waveform
Fig. 4 - Reverse Power Capability
Fig. 5 - Typical Transient Thermal Impedance
0
2.0
4.0
6.0
8.0
0
50
100
150 200
Case Temperature (°C)
Power Di
ssip
ation (W)
0
1000
500
1500
2000
2500
3000
25
50 75
100 125
150 175
Load Dump Power (W)
Case Temperature (°C)
0
50
100
150
0
10
20
30 40
Input Peak Pulse Current (%)
t - Time (ms)
t
d
t
r
= 10 μs
Peak Value
I
PPM
Half Value -
I
PPM
I
PP
2
T
J
= 25 °C
Pulse Width (t
d
) is
Dened as the Point
Where the Peak Current
Decays to 50 % of I
PPM
Reverse Surge Power (W)
1000
10
100
10 000
Pulse Width (ms) - ½ I
PP
Exponential Waveform
R
θJC
0.01 0.1 1 10 100
100
10
1
0.1
0.01
t - Pulse Width (s)
Transient Thermal Impedance (°C/W)
R
θJA
P1-P3P4-P5

SM5S30ATHE3/I

Mfr. #:
Buy SM5S30ATHE3/I
Manufacturer:
Vishay Semiconductors
Description:
TVS Diodes / ESD Suppressors 5W,30V 5%,SMD PAR AEC-Q101 Qualified
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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