PSMN2R4-30MLD
N-channel 30 V, 2.4 mΩ logic level MOSFET in LFPAK33
using NextPowerS3 Technology
11 August 2015 Product data sheet
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1. General description
Logic level gate drive N-channel enhancement mode MOSFET in LFPAK33 package.
NextPowerS3 portfolio utilising NXP’s unique “SchottkyPlus” technology delivers
high efficiency, low spiking performance usually associated with MOSFETs with an
integrated Schottky or Schottky-like diode but without problematic high leakage current.
NextPowerS3 is particularly suited to high efficiency applications at high switching
frequencies.
2. Features and benefits
•
Ultra low Q
G
, Q
GD
and Q
OSS
for high system efficiency, especially at higher switching
frequencies
•
Superfast switching with soft-recovery; s-factor > 1
•
Low spiking and ringing for low EMI designs
•
Unique “SchottkyPlus” technology; Schottky-like performance with < 1 µA leakage at
25 °C
•
Optimised for 4.5 V gate drive
•
Low parasitic inductance and resistance
•
High reliability clip bonded and solder die attach Mini Power SO8 package; no glue,
no wire bonds, qualified to 175 °C
•
Exposed leads for optimal visual solder inspection
3. Applications
•
On-board DC-to-DC solutions for server and telecommunications
•
Secondary-side synchronous rectification in telecommunication applications
•
Voltage regulator modules (VRM)
•
Point-of-Load (POL) modules
•
Power delivery for V-core, ASIC, DDR, GPU, VGA and system components
•
Brushed and brushless motor control
4. Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
DS
drain-source voltage 25 °C ≤ T
j
≤ 175 °C - - 30 V
I
D
drain current T
mb
= 25 °C; V
GS
= 10 V; Fig. 2 [1] - - 70 A
P
tot
total power dissipation T
mb
= 25 °C; Fig. 1 - - 91 W
