IRFS350A Datasheet IRFS350A | P1-P3

IRFS350A

BV

DSS

= 400 V

R

DS(on)

= 0.3Ω

I

D

= 11.5 A

400

11.5

7.3

68

±

30

1134

11.5

9.2

4.0

92

0.74

- 55 to +150

300

1.35

40

--

♦

Avalanche Rugged Technology

♦

Rugged Gate Oxide Technology

♦

Lower Input Capacitance

♦

Improved Gate Charge

♦

Extended Safe Operating Area

♦

Lower Leakage Current: 10

µ

A (Max.) @ V

DS

= 400V

♦

Low R

DS(ON)

: 0.254

Ω

(Typ.)

Thermal Resistance

Junction-to-Case

Junction-to-Ambient

R

θ

JC

R

θ

JA

°C/W

Characteristic Max.

Units

Symbol Typ.

FEATURES

Absolute Maximum Ratings

Drain-to-Source Voltage

Continuous Drain Current (T

C

=25°C)

Continuous Drain Current (T

C

=100°C)

Drain Current-Pulsed

(1)

Gate-to-Source Voltage

Single Pulsed Avalanche Energy

(2)

Avalanche Current

(1)

Repetitive Avalanche Energy

(1)

Peak Diode Recovery dv/dt

(3)

Total Power Dissipation (T

C

=25°C)

Linear Derating Factor

Operating Junction and

Storage Temperature Range

Maximum Lead Temp. for Soldering

Purposes, 1/8

from case for 5-seconds

Characteristic Value UnitsSymbol

I

DM

V

GS

E

AS

I

AR

E

AR

dv/dt

I

D

P

D

T

J

, T

STG

T

L

A

V

mJ

A

mJ

V/ns

W

W/°C

A

°C

V

DSS

V

TO-3PF

1.Gate 2. Drain 3. Source

3

2

1

Rev. B

IRFS350A

400

--

2.0

--

0.46

--

305

134

20

22

100

32

101

14

51.5

--

4.0

100

-100

10

100

0.3

--

2780

350

155

50

55

210

75

131

--

9.75

2140

--

385

4.85

11.5

68

1.5

--

Notes;

(1) Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature

(2) L=15mH, I

AS

=11.5A, V

DD

=50V, R

G

=27

Ω

, Starting T

J

=25

°

C

(3) I

SD

≤

17A, di/dt

≤

250A/

µ

s, V

DD

≤

BV

DSS

, Starting T

J

=25

°

C

(4) Pulse Test: Pulse Width = 250

µ

s, Duty Cycle

≤

2%

(5) Essentially Independent of Operating Temperature

Electrical Characteristics

(T

C

=25°C unless otherwise specified)

Drain-Source Breakdown Voltage

Breakdown Voltage Temp. Coeff.

Gate Threshold Voltage

Gate-Source Leakage , Forward

Gate-Source Leakage , Reverse

CharacteristicSymbol

Max. UnitsTyp.Min. Test Condition

Static Drain-Source

On-State Resistance

Forward Transconductance

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Total Gate Charge

Gate-Source Charge

Gate-Drain (

Miller ) Charge

g

fs

C

iss

C

oss

C

rss

t

d(on)

t

r

t

d(off)

t

f

Q

g

Q

gs

Q

gd

BV

DSS

∆

BV/

∆

T

J

V

GS(th)

R

DS(on)

I

GSS

I

DSS

V

V/

°

C

V

nA

µ

A

Ω

pF

ns

nC

--

V

GS

=0V,I

D

=250

µ

A

I

D

=250

µ

A

See Fig 7

V

DS

=5V,I

D

=250

µ

A

V

GS

=30V

V

GS

=-30V

V

DS

=400V

V

DS

=320V,T

C

=125

°

C

V

GS

=10V,I

D

=5.75A

(4)

V

DS

=50V,I

D

=5.75A

(4)

V

DD

=200V,I

D

=17A,

R

G

=6.2

Ω

See Fig 13

(4) (5)

V

DS

=320V,V

GS

=10V,

I

D

=17A

See Fig 6 & Fig 12

(4) (5)

Drain-to-Source Leakage Current

V

GS

=0V,V

DS

=25V,f =1MHz

See Fig 5

Source-Drain Diode Ratings and Characteristics

Continuous Source Current

Pulsed-Source Current

(1)

Diode Forward Voltage

(4)

Reverse Recovery Time

Reverse Recovery Charge

I

S

I

SM

V

SD

t

rr

Q

rr

CharacteristicSymbol Max. UnitsTyp.Min. Test Condition

--

A

V

ns

µ

C

Integral reverse pn-diode

in the MOSFET

T

J

=25

°

C,I

S

=11.5A,V

GS

=0V

T

J

=25

°

C,I

F

=17A

di

F

/dt=100A/

µ

s

(4)

IRFS350A

10

-1

10

0

10

1

10

-1

10

0

10

1

@ Notes :

1. 250

µ

s Pulse Test

2. T

C

= 25

o

C

V

GS

Top : 1 5 V

1 0 V

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V

Bottom : 4.5 V

I

D

, Drain Current [A]

V

DS

, Drain-Source Voltage [V]

246810

10

-1

10

0

10

1

25

o

C

150

o

C

- 55

o

C

@ Notes :

1. V

GS

= 0 V

2. V

DS

= 50 V

3. 250

µ

s Pulse Test

I

D

, Drain Current [A]

V

GS

, Gate-Source Voltage [V]

0 10203040506070

0.00

0.15

0.30

0.45

0.60

@ Note : T

J

= 25

o

C

V

GS

= 20 V

V

GS

= 10 V

R

DS(on)

, [

Ω

]

Drain-Source On-Resistance

I

D

, Drain Current [A]

0.20.40.60.81.01.21.41.61.8

10

-1

10

0

10

1

150

o

C

25

o

C

@ Notes :

1. V

GS

= 0 V

2. 250

µ

s Pulse Test

I

DR

, Reverse Drain Current [A]

V

SD

, Source-Drain Voltage [V]

10

0

10

1

0

1000

2000

3000

4000

C

iss

= C

gs

+ C

gd

(

C

ds

= shorted

)

C

oss

= C

ds

+ C

gd

C

rss

= C

gd

@ Notes :

1. V

GS

= 0 V

2. f = 1 MHz

C

rss

C

oss

C

iss

Capacitance [pF]

V

DS

, Drain-Source Voltage [V]

0 20406080100120

0

5

10

V

DS

= 320 V

V

DS

= 200 V

V

DS

= 80 V

@ Notes : I

D

= 17.0 A

V

GS

, Gate-Source Voltage [V]

Q

G

, Total Gate Charge [nC]

Fig 1. Output Characteristics Fig 2. Transfer Characteristics

Fig 6. Gate Charge vs. Gate-Source VoltageFig 5. Capacitance vs. Drain-Source Voltage

Fig 4. Source-Drain Diode Forward VoltageFig 3. On-Resistance vs. Drain Current

IRFS350A

IRFS350A

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