OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

NE3515S02-A

P1-P3P4-P6P7-P9
Caution: Observe precautions when handling because these devices are sensitive to electrostatic discharge
HETERO JUNCTION FIELD EFFECT TRANSISTOR
NE3515S02
X to Ku-BAND SUPER LOW NOISE AMPLIFIER
N-CHANNEL HJ-FET
Document No. PG10708EJ01V0DS (1st edition)
Date Published February 2008 NS
FEATURES
• Super low noise figure, high associated gain and middle output power
NF = 0.3 dB TYP., Ga = 12.5 dB TYP. @ f = 12 GHz, VDS = 2 V, ID = 10 mA
PO (1dB) = +14 dBm TYP. @ f = 12 GHz, VDS = 3 V, ID = 25 mA set (Non-RF)
• Micro-X plastic (S02) package
APPLICATIONS
• X to Ku-band local buffer amplifier, PA driver amplifier, low noise amplifier, mixer
• DBS LNB, VSAT
• Other X to Ku-band communication systems
ORDERING INFORMATION
Part Number
Order Number
Package
Quantity
Marking
Supplying Form
NE3515S02-T1C
NE3515S02-T1C-A
S02 (Pb-Free)
2 kpcs/reel
G
• 8 mm wide embossed taping
• Pin 4 (Gate) faces the perforation side
of the tape
NE3515S02-T1D
NE3515S02-T1D-A
10 kpcs/reel
Remark To order evaluation samples, contact your nearby sales office.
Part number for sample order: NE3515S02-A
ABSOLUTE MAXIMUM RATINGS (TA = +25C)
Symbol
Ratings
Unit
VDS
4
V
VGS
3
V
ID
IDSS
mA
IG
100
A
Ptot
Note
165
mW
Tch
+125
C
Tstg
65 to +125
C
Note Mounted on 1.08 cm
2
1.0 mm (t) glass epoxy PCB
Data Sheet PG10708EJ01V0DS
2
NE3515S02
RECOMMENDED OPERATING CONDITIONS (TA = +25C)
Symbol
MIN.
TYP.
MAX.
Unit
VDS
1
2
3
V
ID
5
10
25
mA
Pin
0
dBm
ELECTRICAL CHARACTERISTICS (TA = +25C, unless otherwise specified)
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
IGSO
VGS = 3 V
0.5
10
A
IDSS
VDS = 2 V, VGS = 0 V
32
60
88
mA
VGS (off)
VDS = 2 V, ID = 100
A
0.2
0.8
1.4
V
gm
VDS = 2 V, ID = 10 mA
45
70
mS
NF
VDS = 2 V, ID = 10 mA, f = 12 GHz
0.3
0.5
dB
Ga
11
12.5
dB
PO (1 dB)
VDS = 3 V, ID = 25 mA set (Non-RF),
+14
dBm
f = 12 GHz
Data Sheet PG10708EJ01V0DS
3
NE3515S02
TYPICAL CHARACTERISTICS (TA = +25C, unless otherwise specified)
Remark The graphs indicate nominal characteristics.
P1-P3P4-P6P7-P9

NE3515S02-A

Mfr. #:
Buy NE3515S02-A
Manufacturer:
CEL
Description:
RF JFET Transistors X to Ku-BAND SUPER LOW NOISE AMP N-CH
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet