© 2013 IXYS CORPORATION, All Rights Reserved
IXTA140P05T IXTP140P05T
IXTH140P05T
Fig. 14. Resistive Turn-on Rise Time vs.
Drain Current
22
24
26
28
30
32
34
36
38
-50-48-46-44-42-40-38-36-34-32-30-28-26-24
I
D
- Amperes
t
r
- Nanoseconds
R
G
= 1Ω, V
GS
= -10V
V
DS
= - 30V
T
J
= 25ºC
T
J
= 125ºC
Fig. 15. Resistive Turn-on Switching Times vs.
Gate Resistance
0
40
80
120
160
200
240
02468101214161820
R
G
- Ohms
t
r
- Nanoseconds
20
30
40
50
60
70
80
t
d(on)
- Nanoseconds
t
r
t
d(on)
- - - -
T
J
= 125ºC, V
GS
= -10V
V
DS
= - 30V
I
D
= - 50A, - 25A
Fig. 16. Resistive Turn-off Switching Times vs.
Junction Temperature
22
23
24
25
26
27
28
29
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
f
- Nanoseconds
35
40
45
50
55
60
65
70
t
d(off)
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 1Ω, V
GS
= -10V
V
DS
= - 30V
I
D
= - 25A, - 50A
Fig. 17. Resistive Turn-off Switching Times vs.
Drain Current
30
35
40
45
50
55
60
65
70
-50-48-46-44-42-40-38-36-34-32-30-28-26-24
I
D
- Amperes
t
f
- Nanoseconds
22
23
24
25
26
27
28
29
30
t
d(off)
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 1Ω, V
GS
= -10V
V
DS
= - 30V
T
J
= 25ºC, 125ºC
Fig. 13. Resistive Turn-on Rise Time vs.
Junction Temperature
22
24
26
28
30
32
34
36
38
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
r
- Nanoseconds
R
G
= 1Ω, V
GS
= -10V
V
DS
= - 30V
I
D
= - 25A
I
D
= - 50A
Fig. 18. Resistive Turn-off Switching Times vs.
Gate Resistance
0
40
80
120
160
200
240
280
02468101214161820
R
G
- Ohms
t
f
- Nanoseconds
20
60
100
140
180
220
260
300
t
d(off)
- Nanoseconds
t
f
t
d(off)
- - - -
T
J
= 125ºC, V
GS
= -10V
V
DS
= - 30V
I
D
= - 25A, - 50A