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V80170PW-M3/4W

P1-P3P4-P4
V80170PW-M3
www.vishay.com
Vishay General Semiconductor
Revision: 04-Dec-13
1
Document Number: 89946
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low V
F
= 0.51 V at I
F
= 10 A
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency DC/DC converters, switching
power supplies, freewheeling diodes, OR-ing diode, and
reverse battery protection.
MECHANICAL DATA
Case: TO-3PW
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
PRIMARY CHARACTERISTICS
I
F(AV)
2 x 40 A
V
RRM
170 V
I
FSM
280 A
V
F
at I
F
= 40 A 0.68 V
T
J
max. 175 °C
Package TO-3PW
Diode variation Dual common cathode
TO-3PW
TMBS
®
PIN 2
CASE
PIN 1
PIN 3
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL V80170PW UNIT
Maximum repetitive peak reverse voltage V
RRM
170 V
Maximum average forward rectified current
(fig. 1)
per device
I
F(AV)
80
A
per diode 40
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
I
FSM
280 A
Voltage rate of change (rated V
R
) dV/dt 10 000 V/μs
Operating junction and storage temperature range T
J
, T
STG
-40 to +175 °C
V80170PW-M3
www.vishay.com
Vishay General Semiconductor
Revision: 04-Dec-13
2
Document Number: 89946
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width d 20 ms
RATINGS AND CHARACTERISTICS CURVES (T
A
= 25 °C unless otherwise noted)
Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics Per Diode
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT
Instantaneous forward voltage per diode
I
F
= 10 A
T
A
= 25 °C
V
F
(1)
0.65 -
V
I
F
= 20 A 0.74 -
I
F
= 40 A 0.82 0.91
I
F
= 10 A
T
A
= 125 °C
0.51 -
I
F
= 20 A 0.59 -
I
F
= 40 A 0.68 0.76
Reverse current per diode
V
R
= 136 V
T
A
= 25 °C
I
R
(2)
3.1 - μA
T
A
= 125 °C 3.8 - mA
V
R
= 170 V
T
A
= 25 °C - 600 μA
T
A
= 125 °C 7.3 80 mA
THERMAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL V80170PW UNIT
Typical thermal resistance
per diode
R
TJC
0.7
°C/W
per device 0.5
ORDERING INFORMATION (Example)
PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE
TO-3PW V80170PW-M3/4W 4.5 4W 30/tube Tube
0
5
10
15
20
25
30
35
40
45
0 25 50 75 100 125 150 175
Average Forward Rectied Current (A)
Case Temperature (°C)
0.0
5.0
10.0
15.0
20.0
25.0
30.0
35.0
40.0
0 5 10 15 20 25 30 35 40 45 50
Average Power Loss (W)
Average Forward Current (A)
D = 0.1
D = 0.2
D = 0.3
D = 0.5
D = 1.0
D = 0.8
D = t
p
/T
T
t
p
V80170PW-M3
www.vishay.com
Vishay General Semiconductor
Revision: 04-Dec-13
3
Document Number: 89946
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
Fig. 4 - Typical Reverse Characteristics Per Diode
Fig. 5 - Typical Junction Capacitance Per Diode
Fig. 6 - Typical Transient Thermal Impedance Per Device
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
0.1
1
10
100
0 0.2 0.4 0.6 0.8 1.0
Instantaneous Forward Current (A)
Instantaneous Forward Voltage (V)
T
A
= 150 °C
T
A
= 25 °C
T
A
= 100 °C
T
= 125 °C
T
A
= 175 °C
0.0001
0.001
0.01
0.1
1
10
100
1000
20 40 60 80 100
Instantaneous Reverse Current (mA)
Percent of Rated Peak Reverse Voltage (%)
T
A
= 150 °C
T
A
=125
°
C
T
A
= 100 °C
A
= 25 °C
T
A
= 175 °C
100
1000
10 000
0.1 1 10 100
Junction Capacitance (pF)
Reverse Voltage (V)
T
J
= 25 °C
f = 1.0 MHz
V
si
g
= 50 mV
p
-
p
0.1
1
0.01 0.1 1 10 100
Transient Thermal Impedance (°C/W)
t - Pulse Duration (s)
Junction to Case
TO-3PW
0.645 (16.38)
0.625 (15.87)
0.323 (8.20)
0.313 (7.95)
0.245 (6.23)
0.225 (5.72)
0.840 (21.34)
0.820 (20.83)
0.170 (4.32)
Ø 0.146 (3.71)
Ø 0.136 (3.45)
0.090 (2.29)
0.080 (2.03)
0.131 (3.33)
0.121 (3.07)
0.048 (1.22)
0.044 (1.12)
0.225 (5.72)
0.205 (5.21)
0.565 (14.35)
0.545 (13.84)
0.160 (4.06)
0.140 (3.56)
0.551 (14.00)
0.537 (13.64)
0.077 (1.96)
0.063 (1.60)
0.079 (2.01)
0.065 (1.65)
0.467 (11.86)
0.453 (11.51)
5° Ref.
Both Sides
R0.155 (R3.94)
R0.145 (R3.68)
3° Ref.
30° Ref.
10° Typ.
Both Sides
3° Ref.
3° Ref.
0.050 (1.27)
0.175 (4.45)
0.165 (4.19)
0.030 (0.75)
0.020 (0.50)
0.098 (2.50)
0.083 (2.12)
P1-P3P4-P4

V80170PW-M3/4W

Mfr. #:
Buy V80170PW-M3/4W
Manufacturer:
Vishay Semiconductors
Description:
Schottky Diodes & Rectifiers 80A 170V TrenchMOS
Lifecycle:
New from this manufacturer.
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