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Document Number: 68645
S12-2336-Rev. D, 01-Oct-12
Vishay Siliconix
Si2302CDS
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For technical questions, contact: pmostechsupport@vishay.comm
Notes:
a. Pulse test: Pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
SPECIFICATIONS (T
A
= 25 °C, unless otherwise noted)
Parameter Symbol Test Conditions
Limits
Unit
Min. Typ. Max.
Static
Drain-Source Breakdown Voltage
V
DS
V
GS
= 0 V, I
D
= 250 µA
20
V
Gate-Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 µA
0.40 0.85
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
= ± 8 V
± 100 nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 20 V, V
GS
= 0 V
0.1
µA
V
DS
= 20 V, V
GS
= 0 V, T
J
= 50 °C
4
V
DS
= 20 V, V
GS
= 0 V, T
J
= 70 °C
15
On-State Drain Current
a
I
D(on)
V
DS
10 V, V
GS
= 4.5 V
6A
Drain-Source On-Resistance
a
R
DS(on)
V
GS
= 4.5 V, I
D
= 3.6 A
0.045 0.057
V
GS
= 2.5 V, I
D
= 3.1 A
0.056 0.075
Forward Transconductance
a
g
fs
V
DS
= 5 V, I
D
= 3.6 A
13 S
Diode Forward Voltage
V
SD
I
S
= 0.95 A, V
GS
= 0 V
0.7 1.2 V
Dynamic
b
Total Gate Charge
Q
g
V
DS
= 10 V, V
GS
= 4.5 V, I
D
= 3.6 A
3.5 5.5
nCGate-Source Charge
Q
gs
0.6
Gate-Drain Charge
Q
gd
0.45
Gate Resistance
R
g
f = 1 MHz 2 4 8
Switching
Tur n - O n D e l ay Time
t
d(on)
V
DD
= 10 V, R
L
= 2.78
I
D
3.6 A, V
GEN
= 4.5 V, R
g
= 1
815
ns
Rise Time
t
r
715
Turn-Off Delay Time
t
d(off)
30 45
Fall Time
t
f
715
Source-Drain Reverse Recovery Time
t
rr
I
F
= 3.6 A, dI/dt = 100 A/µs
8.5 15
Body Diode Reverse Recovery Charge
Q
rr
24nC
Output Characteristics
0
2
4
6
8
10
0.0 0.5 1.0 1.5 2.0
V
DS
- Drain-to-Source Voltage (V)
- Drain Current (A)I
D
V
GS
=5V thru 2 V
V
GS
=1V
V
GS
=1.5V
Transfer Characteristics
0
2
4
6
8
10
0.0 0.4 0.8 1.2 1.6 2.0
V
GS
- Gate-to-Source Voltage (V)
- Drain Current (A)I
D
T
C
= 25 °C
T
C
= 125 °C
T
C
= - 55 °C
