© Semiconductor Components Industries, LLC, 2007
April, 2007 − Rev. 4
1 Publication Order Number:
MPSA13/D
MPSA13, MPSA14
MPSA14 is a Preferred Device
Darlington Transistors
NPN Silicon
Features
• Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage V
CES
30 Vdc
Collector−Base Voltage V
CBO
30 Vdc
Emitter−Base Voltage V
EBO
10 Vdc
Collector Current − Continuous I
C
500 mAdc
Total Device Dissipation @ T
A
= 25°C
Derate above 25°C
P
D
625
5.0
mW
mW/°C
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
P
D
1.5
12
W
mW/°C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
−55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Ambient
R
q
JA
200 °C/mW
Thermal Resistance, Junction−to−Case
R
q
JC
83.3 °C/mW
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
Preferred devices are recommended choices for future use
and best overall value.
COLLECTOR 3
BASE
2
EMITTER 1
1
2
3
1
2
BENT LEAD
TAPE & REEL
AMMO PACK
STRAIGHT LEAD
BULK PACK
3
TO−92
CASE 29
STYLE 1
MARKING DIAGRAM
MPS
A1x
AYWW G
G
x = 3 or 4
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)