IXTN8N150L Datasheet IXTN8N150L | P1-P3

Symbol Test Conditions Maximum Ratings

V

DSS

T

J

= 25°C to 150°C 1500 V

V

DGR

T

J

= 25°C to 150°C, R

GS

= 1MΩ 1500 V

V

GSS

Continuous ±30 V

V

GSM

Transient ±40 V

I

D25

T

C

= 25°C 7.5 A

I

DM

T

C

= 25°C, Pulse Width Limited by T

JM

20 A

P

D

T

C

= 25°C 545 W

T

J

-55 to +150 °C

T

JM

150 °C

T

stg

-55 to +150 °C

V

ISOL

50/60 Hz, RMS, t = 1minute 2500 V~

I

ISOL

≤ 1mA, t = 1s 3000 V~

M

d

Mounting Torque for Base Plate 1.5/13 Nm/lb.in.

Terminal Connection Torque 1.3/11.5 Nm/lb.in.

Weight 30 g

G = Gate D = Drain

S = Source S = Source

Symbol Test Conditions Characteristic Values

(T

J

= 25°C, Unless Otherwise Specified) Min. Typ. Max.

BV

DSS

V

GS

= 0V, I

D

= 1mA 1500 V

V

GS(th)

V

DS

= V

GS

, I

D

= 250µA 5.0 8.0 V

I

GSS

V

GS

= ±30V, V

DS

= 0V ±200 nA

I

DSS

V

DS

= V

DSS,

V

GS

= 0V 25 µA

T

J

= 125°C 500 µA

R

DS(on)

V

GS

= 20V, I

D

= 4A, Note 1 3.6 Ω

Linear Power MOSFET

w/Extended FBSOA

IXTN8N150L

N-Channel Enhancement Mode

Guaranteed FBSOA

V

DSS

= 1500V

I

D25

= 7.5A

R

DS(on)

≤ ≤

≤ 3.6

ΩΩ

Ω

S

D

G

miniBLOC, SOT-227 B

E153432

G

D

S

DS99815B(3/13)

Features

z

Designed for Linear Operations

z

International Standard Package

z

Molding Epoxies Meet UL94 V-0

Flammability Classification

z

Guaranteed FBSOA at 60ºC

z

miniBLOC with Aluminum Nitride

Isolation

z

Low R

DS(on)

HDMOS

TM

Process

z

Rugged Polysilicon Gate Cell

Structure

z

Low Package Inductance

Applications

z

Programmable Loads

z

Current Regulators

z

DC-DC Convertors

z

Battery Chargers

z

DC Choppers

z

Temperature and Lighting Controls

Advantages

z

Easy to Mount

z

Space Savings

z

High Power Density

IXYS reserves the right to change limits, test conditions, and dimensions.

IXTN8N150L

Symbol Test Conditions Characteristic Values

(T

J

= 25°C, Unless Otherwise Specified) Min. Typ. Max.

g

fs

V

DS

= 50V, I

D

= 4A, Note 1 1.4 2.3 3.2 S

C

iss

8000 pF

C

oss

V

GS

= 0V, V

DS

= 25V, f = 1MHz 405 pF

C

rss

70 pF

t

d(on)

36 ns

t

r

18 ns

t

d(off)

90 ns

t

f

95 ns

Q

g(on)

250 nC

Q

gs

V

GS

= 15V, V

DS

= 0.5 • V

DSS

, I

D

= 4A 80 nC

Q

gd

116 nC

R

thJC

0.23 °C/W

R

thCS

0.05 °C/W

Safe Operating Area Specification

Symbol Test Conditions Characteristic Values

Min. Typ. Max.

SOA V

DS

= 1500V, I

D

= 0.17A, T

C

= 60°C, T

P

= 3s 255 W

Source-Drain Diode

Symbol Test Conditions Characteristic Values

(T

J

= 25°C, Unless Otherwise Specified) Min. Typ. Max.

I

S

V

GS

= 0V 8 A

I

SM

Repetitive, Pulse Width Limited by T

JM

32 A

V

SD

I

F

= 8A, V

GS

= 0V, Note 1 1.2 V

t

rr

1700 ns

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2

by one or moreof the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

Notes: 1. Pulse Test, t ≤ 300µs; Duty Cycle, d ≤ 2%.

(M4 screws (4x) supplied)

SOT-227B (IXTN) Outline

Resistive Switching Times

V

GS

= 15V, V

DS

= 0.5 • V

DSS

, I

D

= 4A

R

G

= 2Ω (External)

I

F

= I

S

, -di/dt = 100A/µs, V

R

= 100V

IXTN8N150L

Fig. 1. Extended Output Characteristics @ T

J

= 25ºC

0

2

4

6

8

10

0 4 8 121620242832

V

DS

- Volts

I

D

- Amperes

V

GS

= 20V

9

V

10

V

12

V

14V

Fig. 2. Output Characteristics @ T

J

= 125ºC

0

1

2

3

4

5

6

7

8

0 5 10 15 20 25 30 35 40 45 50

V

DS

- Volts

I

D

- Amperes

V

GS

= 20V

9

V

12V

8V

10V

Fig. 3. R

DS(on)

Normalized to I

D

= 4A Value vs.

Junction Temperature

0.4

0.8

1.2

1.6

2.0

2.4

2.8

-50 -25 0 25 50 75 100 125 150

T

J

- Degrees Centigrade

R

DS(on)

- Normalized

V

GS

= 20V

I

D

= 8A

I

D

= 4A

Fig. 4. R

DS(on)

Normalized to I

D

= 4A Value vs.

Drain Current

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

01234567891011

I

D

- Amperes

R

DS(on)

- Normalized

V

GS

= 20V

T

J

= 125ºC

T

J

= 25ºC

Fig. 6. Input Admittance

0

1

2

3

4

5

6

7

8

9

6 7 8 9 10 11 12 13 14

V

GS

- Volts

I

D

- Amperes

T

J

= 125ºC

25ºC

- 40ºC

Fig. 5. Maximum Drain Current vs.

Case Temperature

0

1

2

3

4

5

6

7

8

9

-50 -25 0 25 50 75 100 125 150

T

C

- Degrees Centigrade

I

D

- Amperes

IXTN8N150L

IXTN8N150L

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