UTV200 Datasheet UTV200 | P1-P3

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GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120

UTV200

20 Watts, 26.5 Volts, Class A

UHF Television - Band IV & V

GENERAL DESCRIPTION

The UTV 200 is a COMMON EMITTER transistor capable of providing 20

Watt Peak, Class A, RF Output Power over the band 470 - 860 MHz. The

transistor includes double input prematching for full broadband capability.

Gold Metalization and Diffused Ballasting are used to provide high reliability

and supreme ruggedness.

CASE OUTLINE

55JV, STYLE 2

ABSOLUTE MAXIMUM RATINGS

Maximum Power Dissipation @ 25 C 80 Watts

Maximum Voltage and Current

BVces Collector to Emitter Voltage 50 Volts

BVceo Collector to Emitter Voltage 28 Volts

BVebo Emitter to Base Voltage 4.0 Volts

Ic Collector Current 4.5 Amps

Maximum Temperatures

Storage Temperature - 65 to + 200 C

Operating Junction Temperature + 200 C

ELECTRICAL CHARACTERISTICS @ 25 C

SYMBOL CHARACTERISTICS TEST CONDITIONS MIN TYP MAX UNITS

Pout

IMD

VSWR

Power Out - Pk Sync

Power Input

Power Gain

Intermodulation Distortion

Load Mismatch Tolerance

F = 470 - 860 MHz

Vcc = 26.5 Volts

Ic = 2.7 Amps

Pref = 20Watts

F = 860 MHz

8.5 9.5

-48

2.8

-46

3:1

Watts

LVceo

BVces

BVebo

Cob

Collector to Emitter Breakdown

Collector to Base Breakdown

Emitter to Base Breakdown

Current Gain

Output Capacitance

Thermal Resistance

Ic = 40 mA

Ic = 20mA

Ie = 10 mA

Vce = 5 V, 1 A

Vcb = 26 V, F = 1 MHz

Tc = 25 C

10 150

1.2

Volts

C/W

Note 1: F1=860 MHz, F2=863.5 MHz, F3=864.5 Mhz

European test method, Vision = - 8dB, Sideband= - 16dB, Sound = -7 dB

Note 2: Per side

Initial Issue June, 1994

UTV200

UTV-200

CAPACITORS

C1,C6=4.7 pF ATC series A

C2,C3,C20,C21=33 pF ATC series A

C4,C9=1.2-3.5 pF film diel. trimmer

C5,C7,C11,C12=0.01 mF, 50V Tantalum

C8,C15,C17,C25=1 mF, 50 V Tantalum

C10,C16,C27,C12=0.1 mF 50 V disc ceramic

C13=0.6-6 pF piston trimmer

C19=0.35-3.5 pF piston trimmer

C18,C24,C14,C26=10 mF, 50 V

C28,C30=0.001 mF, 50 V disc ceramic

C31=100 mF, 50 V electrolytic

RESISTORS

R1=10 Ohm, 1/2 W Carbon

R2,R6=500 Ohm potentiometer

R3,R7=4.7K Ohm, 3W, 1% Carbon

R4,R8=1 Ohm, 3W, 1% Carbon film

R5,R9=47 Ohm, 1/4W Carbon film

DIODES

CR1,CR2=IN4148

TRANSISTORS

Q1=GHz UTV-200

Q2,Q3=MJE172

TRANSFORMERS

T1,T2,T3,T4=50 Ohm semi-rigid coax cable

(0.056" X 1.1") soldered to 0.035" X 1.1" microstrip

INDUCTORS

L1,L2=0.46 microHenry molded

L3,L4=1 turn #18 magnet wire on a 0.325" form

MICROSTRIPLINES

L3,L4=0.075" X 0.65"

L5,L6=0.120" X 0.31"

L7,L8=0.120" X 1.33"

BIAS CIRCUIT

50 OHM

RF IN

C16

Vbe 2

C24

C10

C25 C26

Vbe 1

C13

C19

C20

C21

Vce 1

C28

C8 C14

C15

C12

C17

C18

C29

C30

Vce 2

C22

C23

50 OHM

RF OUT

C31

R4 R6 R8

Vce 2

CR2

Vce 1

CR1

Vbe 1

Vbe 2

August 1996

P1-P3

UTV200

Mfr. #:

Buy UTV200

Manufacturer:

Microchip / Microsemi

Description:

RF Bipolar Transistors Bipolar/LDMOS Transisto

Lifecycle:

New from this manufacturer.

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UTV200