1999 Apr 14 2
NXP Semiconductors Product data sheet
NPN Darlington transistor PZTA14
FEATURES
• High current (max. 500 mA)
• Low voltage (max. 30 V).
APPLICATIONS
• Pre-amplifiers requiring high input impedance.
DESCRIPTION
NPN Darlington transistor in a SOT223 plastic package.
PNP
complement: PZTA64.
PINNING
PIN DESCRIPTION
1 base/input
2, 4 collector/output
3 emitter/ground
Fig.1 Simplified outline (SOT223) and symbol.
handbook, halfpage
132
4
MAM319
TR2
2, 4
3
Top view
1
TR1
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm
2
.
For
other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated
Handbook”.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter − 30 V
V
CES
collector-emitter voltage V
BE
= 0 − 30 V
V
EBO
emitter-base voltage open collector − 10 V
I
C
collector current (DC) − 500 mA
I
CM
peak collector current − 800 mA
I
B
base current (DC) − 200 mA
P
tot
total power dissipation T
amb
≤ 25 °C; note 1 − 1.25 W
T
stg
storage temperature −65 +150 °C
T
j
junction temperature − 150 °C
T
amb
operating ambient temperature −65 +150 °C
