Nexperia
PMEG2002ESF
20 V, 0.2 A low VF MEGA Schottky barrier rectifier
PMEG2002ESF All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet 10 March 2017 3 / 13
Symbol Parameter Conditions Min Max Unit
[1] - 950 mW
T
j
junction temperature - 125 °C
T
amb
ambient temperature -55 125 °C
T
stg
storage temperature -65 150 °C
[1] Device mounted on a ceramic Printed-Circuit Board (PCB), Al
2
O
3
, standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for anode and cathode 1 cm
2
each.
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
[1] [2] - - 310 K/W
[1] [3] - - 190 K/W
R
th(j-a)
thermal resistance
from junction to
ambient
in free air
[1] [4] - - 105 K/W
R
th(j-sp)
thermal resistance
from junction to solder
point
[5] - - 40 K/W
[1] For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse power losses P
R
are a
significant part of the total power losses.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for anode and cathode 1 cm
2
each.
[4] Device mounted on a ceramic PCB, Al
2
O
3
, standard footprint.
[5] Soldering point of cathode tab.
aaa-006823
t
p
(s)
10
-3
10
2
10
3
10110
-2
10
-1
10
2
10
3
Z
th(j-a)
(K/W)
10
duty cycle =
1
0.75
0.5
0.33 0.25
0.2
0.1
0.05
0
0.02
0.01
FR4 PCB, standard footprint
Fig. 1. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
