TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP)
www.onsemi.com
5
20
1.0
Figure 6. Active−Region Safe Operating Area
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
10
5.0
2.0
1.0
0.02
2.0 5.0 20 50 100
BONDING WIRE LIMITED
THERMALLY LIMITED
@ T
C
= 25°C (SINGLE PULSE)
0.5
I
C
, COLLECTOR CURRENT (AMP)
T
J
= 150°C
dc
1ms
100 ms
0.2
0.1
10
0.05
SECOND BREAKDOWN LIMITED
CURVES APPLY BELOW
RATED V
CEO
5ms
3.0 7.0 30 70
TIP120, TIP125
TIP121, TIP126
TIP122, TIP127
500 ms
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
C
− V
CE
limits of the transistor that must be observed for reliable
operation, i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 6 is based on T
J(pk)
= 150°C; T
C
is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T
J(pk)
< 150°C. T
J(pk)
may be calculated from the data in Figure 5.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown
300
0.1
V
R
, REVERSE VOLTAGE (VOLTS)
30
2.0 5.0 10 20 100500.2 0.5 1.0
C, CAPACITANCE (pF)
100
50
T
J
= 25°C
C
ib
70
C
ob
PNP
NPN
Figure 7. Small−Signal Current Gain
10,000
1.0
f, FREQUENCY (kHz)
10
20 50 100 200 10002.0 5.0 10
3000
500
100
T
C
= 25°C
V
CE
= 4.0 Vdc
I
C
= 3.0 Adc
1000
PNP
NPN
Figure 8. Capacitance
50
500
h
fe
, SMALL-SIGNAL CURRENT GAIN
5000
2000
300
200
30
20
200
